279 resultados para matrix inversion


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A rearrangeable nonblocking thermo-optic 4×4 switching matrix,which consists of five 2×2 multimode interference-based Mach-Zehnder interferometer(MMI-MZI) switch elements,is designed and fabricated.The minimum and maximum excess loss for the matrix are 6.6 and 10.4dB,respectively.The crosstalk in the matrix is measured to be between -12 and -19.8dB.The switching speed of the matrix is less than 30μs.The power consumption for the single switch element is about 330mW.

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In this study, silicon nanocrystals embedded in SiO2 matrix were formed by conventional plasma enhanced chemical vapor deposition (PECVD) followed by high temperature annealing. The formation of silicon nanocrystals (nc-Si), their optical and micro-structural properties were studied using various experimental techniques, including Fourier transform infrared spectroscopy, micro-Raman spectra, high resolution transmission electron microscopy and x-ray photoelectron spectroscopy. Very strong red light emission from silicon nanocrystals at room temperature (RT) was observed. It was found that there is a strong correlation between the PL intensity and the substrate temperature, the oxygen content and the annealing temperature. When the substrate temperature decreases from 250degreesC to RT, the PL intensity increases by two orders of magnitude.

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Structural dependence on annealing of a-SiOx:H was studied by using infrared absorption and Raman scattering. The appearance of Raman peaks in the range of 513-519cm(-1) after 1170 degreesC annealing was interpreted as the formation nanocrystalline silicon with the sizes from 3-10nm. The Raman spectra also show the existence of amorphous-like silicon phase, which is associated with Si-Si bond re-construction at boundaries of silicon nanocrystallites. The presence of the shoulder at 980cm(-1) of Si-O-Si stretching vibration at 1085cm(-1) in infrared spectra imply that except that SiO2 phase, there is silicon sub-oxide phase in the films annealed at 1170 degreesC. This sub-oxide phase is located at the interface between Si crystallites and SiO2, and thus support the shell model for the mixed structures of Si grains and SiO2 matrix.

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We investigate the annealing behavior of Photoluminescence (PL) from self-assembled InAs quantum dots (QDs) with different thicknesses GaAs cap layers. The diffusion introduced by annealing treatment results in a blue-shift of the QD PL peak, and a decrease in the integrated intensity. The strain present in QDs enhances the diffusion, and the QDs with the cap layers of different thicknesses will experience a strain of different strength. This can lend to a, better understanding of the larger blue-shift of the PL peak of the deeper buried QDs, and the different variance of the full width at half maximum of the luminescence from QDs with the cap layers of different thicknesses.

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The steplike density of states obtained from reflectance-difference spectroscopy demonstrates that ultrathin InAs layers should be regarded as two-dimensional quantum wells rather than isolated clusters, even for the sample with only 1/3 monolayer InAs in (311)-oriented GaAs. The degree of anisotropy is within the intrinsic anisotropy of (311)-oriented ultrathin quantum wells, indicating that there is little structural or strain anisotropy in the InAs islands. (C) 1998 Elsevier Science B.V.

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Phase transformation and subdomain structure in [0001]-oriented gallium nitride (GaN) nanorods of different sizes are studied using molecular dynamics simulations. The analysis concerns the structure of GaN nanorods at 300 K without external loading. Calculations show that a transformation from wurtzite to a tetragonal structure occurs along {0110} lateral surfaces, leading to the formation of a six-sided columnar inversion domain boundary (IDB) in the [0001] direction of the nanorods. This structural configuration is similar to the IDB structure observed experimentally in GaN epitaxial layers. The transformation is significantly dependent on the size of the nanorods.

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The present study has attempted to investigate phase inversion and frictional pressure gradients during simultaneous vertical flow of oil and water two-phase through upward and downward pipes. The liquids selected were white oil (44 mPa s viscosity and 860 kg/m3 density) and water. The measurements were made for phase velocities varying from 0 to 1.24 m/s for water and from 0 to 1.87 m/s for oil, respectively. Experiments were carried either by keeping the mixture velocity constant and increasing the dispersed phase fraction or by keeping the continuous phase superficial velocity constant and increasing the dispersed phase superficial velocity. From the experimental results, it is shown that the frictional pressure gradient reaches to its lower value at the phase inversion point in this work. The points of phase inversion are always close to an input oil fraction of 0.8 for upward flow and of 0.75 for downward flow, respectively. A few models published in the literature are used to predict the phase inversion point and to compare the results with available experimental data. Suitable methods are suggested to predict the critical oil holdup at phase inversion based on the different viscosity ratio ranges. Furthermore, the frictional pressure gradient is analyzed with several suitable theoretical models according to the existing flow patterns. The analysis reveals that both the theoretical curves and the experimental data exhibit the same trend and the overall agreement of predicted values with experimental data is good, especially for a high oil fraction.