Quasi-thermodynamic analysis of MOVPE of AlGaN

A quasi-thermodynamic analysis of the MOVPE growth of AlxGa1-xN alloy using TMGa, TMA1 and ammonia has been proposed. The effect of varying growth conditions (growth temperature, reactor pressure, input V/III ratio, hydrogen pressure fraction in the carrier gas and the decomposed fraction of ammonia) on the distribution coefficient of Al has been calculated. In the case of AlxGa1-xN, preferential incorporation of Al is predicted. The calculated relationship between input vapour and deposited solid composition has been compared with data in the literature. A good agreement between the calculated and the experimental composition shows that our improved model is suitable for applying to the AlxGa1-xN alloy grown by MOVPE. (C) 2000 Elsevier Science B.V. All rights reserved.

The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy

The growth rate of GaN buffer layers on sapphire grown by metalorganic vapor-phase epitaxy (MOVPE) in an atmospheric pressure, two-channel reactor was studied. The growth rate, as measured using laser reflectance, was found to be dependent on growth temperature, molar flow rate of the sources tin this case, trimethylgallium and ammonia) and the input configuration of sources into the reactor. A model of the GaN buffer layer growth process by MOVPE is proposed to interpret the experimental evidence. (C) 1998 Elsevier Science B.V. All rights reserved.

GaN epilayers grown at high growth rate using gas source molecular beam epitaxy method

High-quality GaN epilayers have been grown by gas source molecular beam epitaxy using ammonia as the nitrogen source. During the growth, the growth rate is up to 1.2 mu m/h and can be varied from 0.3 to 1.2 mu m. The unintentional n-type doping as low as 7x10(17) cm(-3) was obtained at room temperature. Low-temperature photoluminescence spectrum was dominated by near-edge emission without deep-level related luminescence, indicative of high-quality epilayers. (C) 1998 Elsevier Science B.V. All rights reserved.

Properties of GaN epilayers with various growth conditions grown by gas source molecular beam epitaxy

GaN epilayers on sapphire (0001) substrates were grown by the gas source molecular beam epitaxy (GSMBE) method using ammonia (NH,) gas as the nitrogen source. Properties of gallium nitride (GaN) epilayers grown under various growth conditions were investigated. The growth rate is up to 0.6 mu m/h in our experiments. Cathodoluminescence, photoluminescence and Hall measurements were used to characterize the films. It was shown that the growth parameters have a significant influence on the GaN properties. The yellow luminescence was enhanced at higher growth temperature. And a blue emission which maybe related to defects or impurity was observed. Although the emission at 3.31 eV can be suppressed by a low-temperature buffer layer, a high-quality GaN epilayer can be obtained without the buffer layer. (C) 1998 Elsevier Science B.V. All rights reserved.

Synthesis of GaN nanorods with vertebra-like morphology

GaN nanorods with vertebra-like morphology were synthesized by nitriding Ga2O3/ZnO films at 1000 degrees C for 20min. Ga2O3 thin films and ZnO middle layers were pre-deposited in turn on Si(111) substrates by r.f. magnetron sputtering system. In the flowing ammonia ambient, ZnO was reducted to Zn and Zu sublimated at 1000 degrees C. Ga2O3 was reducted to Ga2O and Ga2O reacted with NH3 to synthesize GaN nanorods in the help of the sublimation of Zn. The structure and morphology of the nanorods were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM), The composition of GaN nanorods was studied by energy dispersive spectroscopy (EDS) and fourier transform infrared (FTIR) system.

生物质煤气废水氨氮脱除的研究

生物质煤气废水是一种新出现的高浓度氨氮有机废水。作者采用化学沉淀法去除该废水中的氨氮，研究了不同沉淀剂、pH、温度和搅拌时间对氨氮去除效果的影响。结果表明，MgCl2＋Na3PO4·12H2O明显优于其他沉淀剂组合。当n（Mg^2＋）：n（NH4^＋）：n（PO4^3-）=1：1：1、pH10．0、温度30℃、搅拌时间30min时，废水中的氨氮质量浓度从处理前的222mg/L降到17mg／L，去除率为92.3％。

Influence of A-type Zeolite on Methane Hydrate Formation

The porous medium has an important effect on hydrate formation. In this paper, the formation process and the gas storage capacity of the methane hydrate were investigated with A-type zeolite and Sodium Dodecyl Sulfate (SDS) existing in the system. The results show that A-type zeolite can influence methane hydrate formation. At the temperature of 273.5 K and pressure of 8.3 MPa, the distilled water with A-type zeolite can form methane hydrate with gaseous methane in 12 hours. The formation process of the system with A-type zeolite was quite steady and the amount of A-type zeolite can influence the gas storage capacity significantly. The adding of A-type zeolite with 0.067 g.(g water)(-1) into 2 x 10(-3) g.g(-1) SDS-water solution can increase the gas storage capacity, and the maximum increase rate was 31%. Simultaneously the promotion effect on hydrate formation of 3A-type zeolite is much more obvious than that of 5A-type zeolite when the water adding amounts are 0.033 g.g(-1) and 0.067 g.g(-1) at the experimental conditions.

Determination of appropriate condition on replacing methane from hydrate with carbon dioxide

This paper is intended to determine the appropriate conditions for replacing CH4 from NGH with CO2. By analyzing the hydration equilibrium graphs and geotherms, the HSZs of NGH and CO2 hydrate, both in permafrost and under deep sea, were determined. Based on the above analysis and experimental results, it is found that to replace CH4 from NGH with gaseous CO2, the appropriate experimental condition should be in the area surrounded by four curves: the geotherm, (H-V)(CO2), (L-V)(CO2) and (H-V)(CH4), and to replace CH4 from NGH with liquid CO2, the condition should be in the area surrounded by three curves: (L-V)(CO2), (H-L)(CO2) and (H-V)CH4. For conditions in other areas, either CO2 can not form a hydrate or CH4 can release little from its hydrate, which are not desirable results.

Silver nanocrystals modified microstructured polymer optical fibres for chemical and optical sensing

In-fibre chemical and optical sensors based on silver nanocrystals modified microstructured polymer optical fibres (MPOFs) were demonstrated. The silver nanocrystals modified MPOFs were formed by direct chemical reduction of silver ammonia complex ions on the templates of array holes in the microstructure polymer optical fibres. The nanotube-like and nanoisland-like Ag-modified MPOFs could be obtained by adjusting the conditions of Ag-formation in the air holes of MPOFs. SEM images showed that the higher concentration of the reaction solution (silver ammonia 0.5 mol/L, glucose 0.25 mol/L), gave rise to a tubular silver layer in MPOF, while the lower concentration (silver ammonia 0.1 M, glucose 0.05 M) produced an island-like Ag nanocrystal modified MPOF. The tubular Ag-MPOF composite fibre was conductive and could be directly used as array electrodes in electrochemical analyses. It displayed high electrochemical activity on sensing nitrate or nitrite ions. The enhanced fluorescence of dye molecules was observed when the island-like Ag-modified MPOF was inserted into a fluorescent dye solution. (C) 2007 Elsevier B.V. All rights reserved.

GaN m-i-n LED grown by MOVPE

Undoped and Zinc-doped GaN films have been grown using TMGa, DEZn and Ammonia by MOVPE. The GaN blue-green LEDs of m-i-n structure have been fabricated. They can be operated at forward bias less than 5 volts. The EL peak wavelengths was from 455 nm to 504 nm.

Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell

Boron-doped hydrogenated silicon films with different gaseous doping ratios (B_2H_6/SiH_4) were deposited in a plasma-enhanced chemical vapor deposition (PECVD) system. The microstructure of the films was investigated by atomic force microscopy (AFM) and Raman scattering spectroscopy. The electrical properties of the films were characterized by their room temperature electrical conductivity (σ) and the activation energy (E_a). The results show that with an increasing gaseous doping ratio, the silicon films transfer from a microcrystalline to an amorphous phase, and corresponding changes in the electrical properties were observed. The thin boron-doped silicon layers were fabricated as recombination layers in tunnel junctions. The measurements of the Ⅰ-Ⅴ characteristics and the transparency spectra of the junctions indicate that the best gaseous doping ratio of the recombination layer is 0.04, and the film deposited under that condition is amorphous silicon with a small amount of crystallites embedded in it. The junction with such a recombination layer has a small resistance, a nearly ohmic contact, and a negligible optical absorption.

Preparation of 50mm 3C-SiC/Si(111) as Substrates Suited for Ⅲ-Nitrides

50mm SiC films with high electrical uniformity are grown on Si(111) by a newly developed vertical low-pressure chemical vapor deposition (LPCVD) reactor.Both in-situ n- and p-type doping of 3C-SiC are achieved by intentional introduction of ammonia and boron into the precursor gases.The dependence of growth rate and surface morphology on the C/Si ratio and optimized growth conditions is obtained.The best electrical uniformity of 50mm 3C-SiC films obtained by non-contact sheet resistance measurement is ±2.58%.GaN films are grown atop the as-grown 3C-SiC/Si(111) layers using molecular beam epitaxy (MBE).The data of both X-ray diffraction and low temperature photoluminescence of GaN/3C-SiC/Si(111) show that 3C-SiC is an appropriate substrate or buffer layer for the growth of Ⅲ-nitrides on Si substrates with no cracks.

In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD

The heteroepitaxial growth of n-type and p-type 3C-SiC on (0001) sapphire substrates has been performed with a supply of SiH4+C2H4+H-2 system by introducing ammonia (NH3) and diborane (B2H6) precursors, respectively, into gas mixtures. Intentionally incorporated nitrogen impurity levels were affected by changing the Si/C ratio within the growth reactor. As an acceptor, boron can be added uniformly into the growing 3C-SiC epilayers. Nitrogen-doped 3C-SiC epilayers were n-type conduction, and boron-doped epilayers were p-type and probably heavily compensated.

不同年限蔬菜温室土壤基本化学性质比较研究

本文对沈阳市郊大民屯镇不同年限蔬菜温室土壤化学性质进行研究与分析。得到主要结论如下： 蔬菜温室0～20 cm表层土壤有机质、全氮、速效磷、速效钾、铵态氮、硝态氮均处于较高的养分水平，并且随温室使用年限的延长，呈增加的趋势。土壤有酸化的趋势，土壤电导率呈升高态势。土壤有效态Fe、Mn、Cu、Zn含量分别为8.57～60.30 mg kg-1、2.69～22.43 mg kg-1、0.64～7.52 mg kg-1和0.56～9.29 mg kg-1，变异系数为50%左右；随着温室使用年限的增加，土壤有效态Fe、Mn、Cu、Zn含量总体上呈增加的趋势。土壤Ni、Cd的有效含量随种植年限的延长趋于增加，有效Pb呈现出下降的趋势，土壤重金属Cr的有效态含量与种植年限之间没有明显的相关性。 不同年限蔬菜温室土壤剖面有机质、全氮、速效磷及速效钾含量高于相邻的露地菜田土壤，并随种植年限的延长而增加，随土层深度的增加而下降。温室土壤中铵态氮的含量随温室种植年限的变化相对较小，在土壤剖面不同层次中变化也没有明显的规律性。与露地菜田土壤相比，温室土壤中有效态铁、锰含量下降，有效态铜、锌、铅、镍含量增加。0～30 cm土层土壤交换性Ca呈下降的趋势，交换性Mg呈上升的趋势，土壤Ca/Mg比值呈下降的趋势。

下辽宁省河平原稻田生态系统的NH_3挥发和N淋溶

在地处下辽河平原的中国科学院沈阳生态实验站潮棕壤上布置施N量分别为180、240和300kg·hm~(-2)，施P量分别为70、100和130kg·hm~(-2)的稻田田间试验。应用通气密闭室法和陶土渗滤管法，测定了稻田生态系统三个不同施肥期施用氮肥后的NH3挥发损失和N淋溶，结果表明：1．水稻生长季节施用氮肥后有明显NH3挥发，总挥发量为11.64kgN·hm~(-2)-34.01kgN·hm~(-2)，占施N量的4.66％-11.66％，主要发生在施用分孽肥后，每次NH3挥发高峰出现在施氮肥后的2-4d内。2．水分渗漏对NH3挥发损失有重要影响。田面积水条件下，NH3挥发损失量及其占施N量的比率都较大，不同施N处理间差异显著（P＜0.05），NH3挥发量随施N量增加而增加；田面不积水条件下，NH3挥发损失挥发量相对较小。3．氮肥用量、田面水NH4斗一浓度和田面水pH是影响NH3挥发重要因素；180kgN·hm~(-2)条件下，积水时不同P处理间NH3挥发差异不显著。4．水稻生长季节各次施用氮肥后，60cm和gocm深处渗漏液中NH4+-N含量都小于2mg·L~(-1)，各施氮肥处理与对照间差异不显著。但NO3-淋溶比较显著，多集中在3mgN·ul-15mgN·L~(-1)之间。NO3-的淋溶随施N量增加而增加。水分渗漏状况影响N03一在不同土层深度的累积，渗水越快NO3-淋溶深度越大。渗水快或者施N量高时NO3，淋溶浓度高于国际饮用水卫生标准10mgN·L~(-1)，已有污染浅层地下水的可能。5．施用基肥后灌水，NH_4~+、NO_3~-立即出现淋溶高峰，而两次追施氮肥的淋溶高峰出现在施肥后10d或更久；并且基肥时期的淋溶浓度也比较高。