Spectral relationship of photoinduced refractive index and absorption changes in fulgide films

Fulgides are one kind of organic photochromic compound, which are famous for their thermal irreversibility. In this report, from the difference spectra of the absorption A() of one kind of pyrrylfulgide, the spectral refractive index change n() was calculated by the Kramers-Kronig relation (KKR), and a good correlation of theoretically derived values and the experimental values of the n measured by a modified Michelson interferometer was found. Further, it is demonstrated that it was possible to calculate the spectral dependence of diffraction efficiency from the easily accessible absorption changes. This method will be a useful tool for the characterization and optimization of fulgide films. The results show that the diffraction efficiency is high at 488 and 750 nm, where the absorption is very small, so we can realize non-destructive reconstruction.

退耕还林(草)和降雨变化对延河流域土壤侵蚀的影响

通过定量评估退耕还林(草)和降雨变化对延河流域土壤侵蚀的影响,为延河流域水土保持效益评价、流失治理和环境建设提供决策参考。【方法】利用延河流域日降雨、数字高程模型、土壤类型图、土地利用图和植被覆盖图,运用RUSLE模型,在ArcGIS平台的支持下计算流域1997年和2000年土壤侵蚀量,并分别模拟了退耕还林(草)和气候变化对土壤侵蚀的影响。【结果】由于降雨的变化,研究区年降雨侵蚀力均值由1997年的775.32MJ·mm·hm-2·h-1·a-1增加到了2000年的1292.07MJ·mm·hm-2·h-1·a-1,降雨大大加剧了流域土壤侵蚀;由于退耕还林(草)政策的实施,坡耕地面积大大减少,林草面积增加,植被覆盖和管理因子值显著减少,由退耕还林(草)前的0.1714下降到了退耕还林(草)后0.1592,减小了流域土壤侵蚀;由于退耕还林(草)的实施、气候变化以及水土保持工程措施和耕作措施变化共同影响,单位面积平均土壤侵蚀量由退耕还林(草)前的3012t·km-2·a-1增加到了退耕还林(草)后4671t·km-2·a-1,年土壤侵蚀总量2314×104t增加到了3589×104t。【结论】降雨变化使得...

A NEW METHOD FOR DETECTING SUBTLE CHANGES IN SI-H BONDS OF A-SI-H

A new method developed for detecting possible subtle changes in Si-H bonds of a-Si:H after light soaking is described in detail. The method promises a sensitivity orders of magnitude higher than that reached by the usual IR spectrometer. Some preliminary results on phosphorus doped a-Si:H are given.

PHOTOINDUCED CHANGES OF HYDROGEN-BONDING IN SEMIINSULATING IRON-DOPED INDIUM-PHOSPHIDE

After illumination with 1-1.3 eV photons during cooling-down, metastable PH modes are observed by IR absorption at 5 K in semi-insulating InP:Fe. They correlate with the photo-injection of holes, but not with a change of the charge state of the K-related centres present at equilibrium. They are explained by a change of the bonding of H, induced by hole trapping, from IR-inactive centres to PH-containing centres, stable only below 80 K. One metastable centre has well-defined geometrical parameters and the other one could be located in a region near from the interface with (Fe,P) precipitates.

Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing

Self-organized InAs quantum; dots sheets are grown on GaAs(100) substrate and tapped by 80nm GaAs layer with molecular beam epitaxy. Samples were annealed and characterized with Raman spectra, transmission electron microscopy (TEM) and photolumincscence (PL). The Raman spectra indicates arsenic clusters in the GaAs capping layer. The TEM analysis revealed the relaxation of strain in some InAs islands with the introduction of the network of 90 dislocations. In addition, the structural changes also lead to the changes of the PL spectra from me InAs islands. Their correlation was discussed, Our results suggest:est that annealing may be used to intentionally modify me properties of self-organized InAs islands on GaAs.