1 x 4 Ge-on-SOI PIN Photodetector Array for Parallel Optical Interconnects

High-quality Ge film was epitaxially grown on silicon on insulator using the ultrahigh vacuum chemical vapor deposition. In this paper, we demonstrated that the efficient 1 4 germanium-on-silicon p-i-n photodetector arrays with 1.0 mu m Ge film had a responsivity as high as 0.65 A/W at 1.31 mu m and 0.32 A/W at 1.55 mu m, respectively. The dark current density was about 0.75 mA/cm(2) at 0 V and 13.9 mA/cm(2) at 1.0 V reverse bias. The detectors with a diameter of 25 mu m were measured at 1550 nm incident light under 0 V bias, and the result showed that the 3-dB bandwidth is 2.48 GHz. At a reverse bias of 3 V, the bandwidth is about 13.3 GHz. The four devices showed a good consistency.

Improved surface morphology of stacked 1.3 mu m InAs/GaAs quantum dot active regions by introducing annealing processes

The authors report a simple but effective way to improve the surface morphology of stacked 1.3 mu m InAs/GaAs quantum dot (QD) active regions grown by metal-organic chemical vapor deposition (MOCVD), in which GaAs middle spacer and top separate confining heterostructure (SCH) layers are deposited at a low temperature of 560 degrees C to suppress postgrowth annealing effect that can blueshift emission wavelength of QDs. By introducing annealing processes just after depositing the GaAs spacer layers, the authors demonstrate that the surface morphology of the top GaAs SCH layer can be dramatically improved. For a model structure of five-layer QDs, the surface roughness with the introduced annealing processes (IAPs) is reduced to about 1.3 nm (5x5 mu m(2) area), much less than 4.2 nm without the IAPs. Furthermore, photoluminescence measurements show that inserting the annealing steps does not induce any changes in emission wavelength. This dramatic improvement in surface morphology results from the improved GaAs spacer surfaces due to the IAPs. The technique reported here has important implications for realizing stacked 1.3 mu m InAs/GaAs QD lasers based on MOCVD.

Si1-xGex/Si resonant-cavity-enhanced photodetectors with a silicon-on-oxide reflector operating near 1.3 mu m

We report on a Si1-xGex/Si multiple quantum-well resonant-cavity-enhanced (RCE) photodetector with a silicon-on-oxide reflector as the bottom mirror operating near 1.3 mu m. The breakdown voltage of the photodetector is above 18 V and the dark current density at 5 V reverse bias is 12 pA/mu m(2). The RCE photodetector shows enhanced responsivity with a clear peak at 1.285 mu m and the peak responsivity is measured around 10.2 mA/W at a reverse bias of 5 V. The external quantum efficiency at 1.3 mu m is measured to be 3.5% under reverse bias of 16 V, which is enhanced three- to fourfold compared with that of a conventional p-i-n photodetector with a Ge content of 0.5 reported in 1995 by Huang [Appl. Phys. Lett. 67, 566 (1995)]. (C) 2000 American Institute of Physics. [S0003-6951(00)00628-8].

A novel 1.3-mu m high T-0 AlGaInAs/InP strained-compensated multi-quantum well complex-coupled distributed feedback laser diode

A 1.3-mu m AlGaInAs/InP buried heterostructure (BH) stripe distributed feedback laser with a novel AlInAs/InP complex-coupled grating grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) is proposed and demonstrated. A high characteristic temperature (T-0 = 90K between 20-80 degrees C) and temperature-insensitive slope efficiency (0.25 dB drop from 20 to 80 degrees C) in 1.3 mu m AlGaInAs/InP DFB lasers was obtained by introducing AI(Ga)InAs graded-index separate-confinement heterostructure (GRINSCH) layers and a strained-compensated (SC) multi-quantum well (MQW).

High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy

We report the molecular beam epitaxy growth of 1.3 mu m InAs/GaAs quantum-dot (QD) lasers with high characteristic temperature T-0. The active region of the lasers consists of five-layer InAs QDs with p-type modulation doping. Devices with a stripe width of 4 mu m and a cavity length of 1200 mu m are fabricated and tested in the pulsed regime under different temperatures. It is found that T-0 of the QD lasers is as high as 532K in the temperature range from 10 degrees C to 60 degrees C. In addition, the aging test for the lasers under continuous wave operation at 100 degrees C for 72 h shows almost no degradation, indicating the high crystal quality of the devices.

Electropolymerized poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) film on ITO glass and its application in photovoltaic device

Poly(3,4-ethylenedioxythiopliene):poly(styrene sulfonate) (PEDOT:PSS) films have been electrochemically polymerized in situ on ITO glass substrate in boron trifluoride diethyl etherate electrolyte (BFEE). Cyclic voltammograms show good redox activity and stability of the PEDOT films. These films had been directly used to fabricate organic-inorganic hybrid solar cells with the structure of ITO/PEDOT/ZnO:MDMC-PPV/Al. The solar cells made of electrochemically polymerized films exhibit higher energy conversion efficiencies compared with that prepared by the spin-coating method, and the highest value is 0.33%. This in-situ electropolymerized method effectively simplifies fabricating procedures and may blaze a facile and economical route for producing high-efficiency solar cells.

巨磁电阻材料La_(2/3)Ca_(1/3)Mn(O_(1-x),F_x)_3的研究

主要采用了X射线衍射、Mossbauer谱、磁测量等方法系统研究了块体巨磁电阻材料La_(2/3)Ca_(1/3)Mn_(1-x)Fe_xO_3在不同铁含量(0≤x≤0.84)时结构、性能、磁性的变化，并给予合理的解释。在0

Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy

1.3 mum wavelength In(Ga)As/GaAs nanometer scale islands grown by molecular beam epitaxy (MBE) were characterized by photoluminescence (PL) and atomic force microscopy (AFM) measurements. It is shown that inhomogeneous broadening of optical emission due to fluctuation of the In0.5Ga0.5As islands both in size and in compositions can be effectively suppressed by introducing a AlAs layer and a strain reduction In0.2Ga0.8As layer overgrown on top of the islands, 1.3mum emission wavelength with narrower line-width less than 20meV at room temperature was obtained.

1.3 mu m InGaAsP/InP strained layer multi-quantum-well complex-coupled distributed feedback laser

1.3 mu m strained-layer multi-quantum wells complex-coupled distributed feedback lasers with a wide temperature range of 20 to 100 degrees C are reported. The low threshold current of 10mA and high single-facet slope efficiency of 0.3mW/mA were obtained for an as cleaved device. The single mode yield was as high as 80%.

Interference Effects in Hyperfine Induced 2s2p P-3(0), P-3(2) -> 2s(2) S-1(0) Transitions of Be-like Ions

In this paper, we explored the characteristics of the interference effects between perturbative states in hyperfine induced 2s2p P-3(0), P-3(2) -> 2s(2) S-1(0) transitions of Be-like ions. It was found that the interference effects non-monotonically change with increasing atomic number Z in these two transitions. The strongest interference effect is near Z = 9 for 2s2p P-3(0), -> 2s(2) (1)S(0)transition and near Z = 7 for the other.

钯/铁双金属对土壤中2,2′,3,4,4′,5,5′-七氯联苯的催化脱氯研究

采用Fe0还原、钯催化法对土壤中2,2′,3,4,4′,5,5′-七氯联苯的的还原特性进行了实验研究.结果表明,Pd/Fe双金属能有效地进行2,2′,3,4,4′,5,5′-七氯联苯的催化脱氯.在钯化率为0.05%、钯/铁加入量1 g、初始pH为5.6、反应时间5 d的条件下,钯/铁双金属对土壤中2,2′,3,4,4′,5,5′-七氯联苯去除率达54%.实验还考察了钯化率、初始pH、反应时间、钯/铁投加量、2,2′,3,4,4′,5,5′-七氯联苯初始浓度等参数对2,2′,3,4,4′,5,5′-七氯联苯脱氯效果的影响.研究表明,较高的钯化率、钯/铁加入量,较低的2,2′,3,4,4′,5,5′-七氯联苯初始浓度及弱酸性等条件更有利于Pd/Fe对2,2′,3,4,4′,5,5′-七氯联苯的还原脱氯.在Pd/Fe双金属表面,2,2′,3,4,4′,5,5′-七氯联苯的脱氯符合一级动力学反应,反应速率常数为0.014 2/h,其半衰期为49 h.利用实验数据,对钯/铁双金属作用下的2,2′,3,4,4′,5,5′-七氯联苯还原脱氯的反应机制也进行了分析.

Efficient One-Pot Synthesis of Highly Substituted Thiophene Library from 1,3-Dicarbonyl Compounds

A faccile and efficient one-pot synthesis of highly substituted thiophenes has been developed and employed for the preparation of a small focused library. Treatment of 1,3-dicarbonyl compounds 1 with CS2 in the presence of K2CO3 in DMF at room temperature, followed by stepwise addition of alkyl bromides 2 and methylene active bromides 3, provided via intramolecular cyclization 2,3,4,5-tetrasubstituted thiophenes 4 in yields of 77-94%. This protocol, combining construction and modification of the thiophene ring, increases the structural diversity of final products from readily available materials. A mechanism for the one-pot synthesis of thiophenes of type 4 has been proposed. A small focused library of thiophenes is prepared using the sequential addition of reagents to achieve unique substitution in the 2 and 5 position of the thiophene ring

Aliphatic Poly(ester-carbonate)s Bearing Amino Groups and Its RGD Peptide Grafting

This article deals with (1) synthesis of novel cyclic carbonate monomer (2-oxo [1,3]dioxan-5-yl)carbamic acid benzyl ester (CAB) containing protected amino groups; (2) ring-opening copolymerization of the cyclic monomer with L-lactide (LA) to provide novel degradable poly(ester-carbonate)s with functional groups; (3) removal of the protective benzyloxycarbonyl (Cbz) groups by catalytic hydrogenation to afford the corresponding poly(ester-co-carbonate)s with free amino groups; (4) grafting of oligopeptide Gly-Arg-Gly-Asp-Ser-Tyr (GRGDSY, abbreviated as RGD) onto the copolymer pendant amino groups in the presence of 1,1'-carbonyldiimidazole (CDI).

Syndiotactically enriched 1,2-selective polymerization of 1,3-butadiene initiated by iron catalysts based on a new class of donors

A series of phosphoryl (P=O) contained compounds: triethylphosphate (a), diethyl phenyl phosphate (b), ethyldiphenylphosphate (c) triarylphosphates (d and h-m), triphenylphosphine oxide (e), phenyl diphenylphosphinate (f) and diphenyl phenylphosphonate (g) have been prepared. Iron catalysts, which are generated in situ by mixing the compounds with Fe(2-EHA)(3) and (AlBu3)-Bu-i in hexane, are tested for butadiene polymerization at 50 degrees C. Phosphates donated catalysts have been, unprecedently, found to conduct extremely high syndiotactically (pentad, rrrr=46.1-94.5%) enriched 1,2-selective (1,2-structure content=56.2-94.3%) polymerization of butadiene.

Living polymerization of 1,3-butadiene by a Ziegler-Natta type catalyst composed of iron(III) 2-ethylhexanoate, triisobutylaluminum and diethyl phosphite

Living characteristics of facilely prepared Ziegler-Natta type catalyst system consisting of iron(III) 2-ethylhexanoate, triisobutylaluminum and diethyl phosphite have been found in the polymerization of 1,3-butadiene in hexane at 40 degrees C. The characteristics have been well demonstrated by: a first-order kinetics with respect to monomer conversion, a narrow molecular weight distribution (M-w/M-n = 1.48-1.52) of polybutadiene in the entire range of polymerization conversion and a good linearity between M-n and the yield of polymer. Feasible post-polymerization of 1,3-butadiene and block co-polymerization of 1,3-butadiene and isoprene further support the living natures of the catalyst bestowed with.