Influence of exotic Mn on magnetic properties of YCo5.0-xMnxGa7.0 (0.05 <= x <= 3.0)

The YCo5.0-xMnxGa7.0 compounds crystallize with the ScFe6Ga6-type structure. The lattice of YCo5.0-xMnxGa7.0 expands with the increase of the Mn content for 0.05 <= x <= 2.5, but the lattice of YCo2.0Mn3.0Ga7.0 shrinks compared with YCo2.5Mn2.5Ga7.0. The shrinkage of the lattice is attributed to the magnetostriction of YCo2.0Mn3.0Ga7.0. The substitution of Mn for Co forms magnetic clusters in the antiferromagnetic matrix. The magnetic frustration results in the spin-glass-like behavior for 0.8 <= x <= 1.5 and the difference between zero-field-cooling (ZFC) and field-cooling (FC) magnetizations for x = 2.0, 2.5, and 3.0. A stable long-range magnetic ordering appears among the Mn-centered magnetic clusters with the ordering temperature 110 K for x = 2.0. The hump in the thermomagnetization of YCo3.0Mn2.0Ga7.0 can be attributed to the competitive effects between the thermal fluctuation and the enhanced magnetic interaction. Both the hump and the bifurcation between the ZFC and the FC magnetizations of YCo3.0Mn2.0Ga7.0 occur at lower temperatures as the applied field increases. On the two-step magnetization curve of YCo3.0Mn2.0Ga7.0, the inflection point at 4000 Oe is due to the coercive field, and the magnetic moments in the clusters are tilted to the applied field above 4000 Oe. The magnetic ordering temperature is further increased to 210 K for x = 2.5 and to 282 K for x = 3.0. The spontaneous magnetization of YCo2.0Mn3.0Ga7.0 is 0.575 mu B/f.u. at 5 K with a canted magnetic structure.

Spatial variation of optical and structural properties of ELO GaN directly grown on patterned sapphire by HVPE

A 275 mu m thick GaN layer was directly grown on the SiO2-prepatterned sapphire in a home-built vertical hydride vapour phase epitaxy (HVPE) reactor. The variation of optical and structure characteristics were microscopically identified using spatially resolved cathodeluminescence and micro-Raman spectroscopy in a cross section of the thick film. The D X-0(A) line with the FWHM of 5.1 meV and etch- pit density of 9 x 10(6) cm(-2) illustrated high crystalline quality of the thick GaN epitaxial layer. Optically active regions appeared above the SiO2 masks and disappeared abruptly due to the tapered inversion domains at 210 - 230 mu m thickness. The crystalline quality was improved by increasing the thickness of the GaN/sapphire interface, but the region with a distance of 2 mu m from the top surface revealed relatively low quality due to degenerate surface reconstruction by residual gas reaction. The x-ray rocking curve for the symmetric (0 0 2) and asymmetric (1 0 2) reflections also showed good quality and a small wing tilt of the epitaxial lateral overgrowth (ELO) GaN.

Passively Q-switched Nd : GdVO4 laser with In0.25Ga0.75As being an output coupler

We report a diode-end-pumped passively Q-switched Nd:GdVO4 laser operating at 1.06 mu m with In0.25Ga0.75As being the saturable absorber as well as an output coupler. Q-switched pulses with a pulse duration of 20 ns, pulse energy 4.2 mu J and pulse repetition rate 200 kHz were produced, corresponding to peak power of 210 W. (c) 2006 Elsevier Ltd. All rights reserved.

Temperature dependence of surface quantum dots grown under frequent growth interruption

We grow InGaAs quantum dot (QD) at low growth rate with 70 times insertion of growth interruption in MBE system. It is found that because of the extreme growth condition, QDs exhibit a thick wetting layer, large QD height value and special surface morphology which is attributed to the enhanced adatom surface diffusion and In-segregation effect. Temperature dependence of photoluminescence measurement from surface QD shows that this kind of QD has good thermal stability which is explained in terms of the presence of surface oxide. The special distribution of QD may also play a role in this thermal character. (c) 2006 Elsevier B.V. All rights reserved.

Electronic properties of sulfur passivated undoped-n(+) type GaAs surface studied by photoreflectance

Photoreflectance (PR) has been used to study surface electronic properties (electric field, Fermi level pinning, and density of surface states) of undoped-n(+) (UN+) GaAs treated in the solution of ammonium sulfide in isopropanol. Complex Fourier transformation (CFT) of PR spectra from passivated surface shows that the sulfur overlay on GaAs surface makes no contribution to Franz-Keldysh oscillations (FKOs). The barrier height measured by PR is derived from surface states directly, rather than the total barrier height, which includes the potentials derived from Ga-S and As-S dipole layers. Comparing with native oxidated surface, the passivation leads to 80 meV movement of surface Fermi level towards the conduction band minimum, and reduction by more than one order in density of surface states. (C) 2003 Elsevier Science B.V. All rights reserved.

High-quality metamorphic HEMT grown on GaAs substrates by MBE

Metamorphic high electron mobility transistor (M-HEMT) structures have been grown on GaAs substrates by molecular beam epitaxy (MBE). Linearly graded and the step-graded InGaAs and InAlAs buffet layers hal e been compared, and TEM, PL and low-temperature Hall have been used to analyze the properties of the buffer layers and the M-HEMT structure. For a single-delta-doped M-HEMT structure with an In0.53Ga0.47As channel layer and a 0.8 mum step-graded InAlAs buffer layer, room-temperature mobility of 9000 cm(2)/V s and a sheet electron density as high as 3.6 x 10(12)/cm(2) are obtained. These results are nearly equivalent to those obtained for the same structure grown on an InP substrate. A basic M-HEMT device with 1 mum gate was fabricated, and g(m) is larger than 400 mS/mm. (C) 2001 Elsevier Science B.V. All rights reserved.

Temperature dependence of polaron cyclotron resonance mass in GaAs/AlGaAs heterostructures

The temperature dependence of polaron cyclotron resonance mass in GaAs/AlGaAs heterostructures is reinvestigated theoretically. By taking into account the electron-longitudinal-optic phonon interaction with temperature-dependent many-body effects, the conduction band non-parabolicity, and the influence of nonzero magnetic field, a good agreement with experiment is obtained.

Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers

We have investigated the temperature and excitation power dependence of photoluminescence properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As quantum wells. The temperature evolutions of the lower-and higher-energy transition in the photoluminescence spectra have been observed. The striking result is that a higher-energy peak appears at 105 K and its relative intensity increases with temperature in the 105-291 K range. We demonstrate that the higher-energy peak corresponds to the excited-state transition involving the bound-electron state of quantum dots and the two-dimensional hole continuum of wetting layer. At higher temperature, the carrier transition associated with the wetting layer dominates the photoluminescence spectra. A thermalization model is given to explain the process of hole thermal transfer between wetting layer and quantum dots. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

12 W high efficiency single frequency ring laser

Single-frequency output power of 12 W at 1064 nm is demonstrated. Pumped by a fiber-coupled diode laser, the Nd:YVO4 produces 58.6% of the slope efficiency with respect to absorbed pump power, and 52.7% of the optical-optical efficiency and nearly diffraction-limited output with a beam quality parameter of M-2 approximate to 1.11. To the best of our knowledge, this is the highest slope efficiency and optical-optical efficiency in single-frequency Nd:YVO4 ring laser. The slope efficiency of the single frequency laser is close to the limit of the efficiency. [GRAPHICS] output spectrum of the single-frequency Nd:YVO4 ring laser

高校用户对国外网络数据库的使用统计与分析

以深圳大学用户对国外网络数据库的使用为例，总结各数据库使用统计数据的获取途径，统计各数据库的使用情况及成本效益，并与其他高校进行对比，最后从图书馆及数据库商两个角度提出建议

基于策略的域间访问控制和信息流控制框架

随着互联网及其相关技术的发展，多域环境下的资源共享越来越普遍。域间的资源共享给域间合作带来了便利的同时也带来了安全问题。其中两个关键安全问题是跨域访问控制和跨域信息流控制。本文针对典型的跨域资源共享系统的安全需求，提出了基于策略的跨域访问控制与信息流控制框架。框架包括了授权和访问控制体系结构、授权策略模型、用于生成和维护授权策略的协议和算法、 用于表示和分析跨域信息流的信息流图和用于控制跨域信息流的机制。主要贡献具体体现在以下几个方面： 1）框架的提出使得安全互操作可以以一种无策略协调器的方式进行。在对资源共享进行控制的现有方案中， 其安全互操作都是以基于中心协调器的方式进行，存在如下问题：中心协调器会成为仲裁域间资源共享的瓶颈；有时很难找到一个可信的第三方来持有中心协调器。框架通过以一种无策略协调器的方式使得这些问题得到解决。首先，框架给出一个分布式跨域授权策略模型；根据此模型，跨域策略被分布到每个域，而每个域所保留的策略对于安全违反检测以及资源的访问判定来说是可靠的和完备的。其次，框架给出了协议和算法以在域初始建立合作时生成这样的跨域授权策略，并给出了跨域策略变更的协议和算法。其中，跨域授权策略初始建立与变更过程中的安全违反检测可以在单个域本地进行 — 也就是说, 每个域检查是否有对其自身的安全违反并引导协商以去除违反；对一个域的资源的访问判定由此域自身来确定（根据其保留的策略）。 2）框架给出了一个渐进的策略变更方案。此方案只涉及与策略变更相关的域，并且只涉及到与策略变更相关的策略。在多种情况下，变更不会带来任何安全违反或者只会带来某种类型的安全违反。如果存在任何安全违反，此安全违反也是被限定在相关策略范围内。此方案适合策略变更频繁的动态环境。 3）框架给出了一种面向多域资源共享的信息流控制方案。该方案面向采用了基于角色访问控制（RBAC）策略和单向角色映射的多域环境。方案给出了如何用信息流图来表示和分析跨域信息流的方法。根据与信息扩散相关的需求，给出域内信息安全和域间信息安全的概念。域可以定义域内和域间信息安全需求以控制信息扩散。而且给出了角色划分、角色激活上的限制、角色映射激活上的限制等措施来满足由域定义的需求。

低轮Camellia的碰撞攻击

Camellia是欧洲密码大计划NESSIE的最终获胜者, 首先构造了Camellia的4轮区分器, 然后利用这些区分器和碰撞搜索技术分析Camellia的安全性. 在密钥长度为128比特的情况下, 攻击6轮Camellia的数据复杂度小于210个选择明文, 时间复杂度小于215次加密; 攻击7轮Camellia的数据复杂度小于212个选择明文, 时间复杂度小于254.5次加密; 攻击8轮Camellia的数据复杂度小于213个选择明文, 时间复杂度小于2112.1次加密; 攻击9轮Camellia的数据复杂度小于2113.6个选择明文, 时间复杂度小于2121次加密. 在密钥长度为192/256比特的情况下, 攻击8轮Camellia的数据复杂度小于213个选择明文, 时间复杂度小于2111.1次加密; 攻击9轮Camellia的数据复杂度小于213个选择明文, 时间复杂度小于2175.6次加密; 攻击10轮Camellia的数据复杂度小于214个选择明文, 时间复杂度小于2239.9次加密. 结果显示碰撞攻击是目前对低轮Camellia最有效的攻击方法.

基于嵌入式Linux的网络电视终端的实时性开发及HTML控制方法

Linux诸多优点，和国际自由软件组织的努力，使基于Linux的开发的嵌入式产品越来越多。由于Web技术的普及，怎样在嵌入式产品上实现性能优异的Web功能成为了当前的一个研究热点。该文深入探讨在进行嵌入式应用开发过程中遇到的问题并给出了相应的解决方法。并以网络电视终端为例，详细论述具体嵌入式产品中各部分的设计和实现。重点论述基于嵌入式Linux的网络电视终端的实时性开发及HTML控制方法。

基于场景的笔式界面设计工具的设计和实现

设计实现了一个基于数字笔的用户界面设计工具，该工具以面向笔式界面领域，基于场景的设计思想来设计系统中的界面场景组织关系以及场景之间的动态切换方式，设计者与工具间的交互自然流畅、快捷高效。通过手势识别技术，该工具可以将场景的设计结果转换为内部的界面描述语言，并通过相应的解释最终构造生成笔式用户界面。该工具可以快速生成界面原型，从而有效地提高了笔式交互系统的设计和开发效率。