1.3 mu m InGaAsP/InP strained layer multi-quantum-well complex-coupled distributed feedback laser

1.3 mu m strained-layer multi-quantum wells complex-coupled distributed feedback lasers with a wide temperature range of 20 to 100 degrees C are reported. The low threshold current of 10mA and high single-facet slope efficiency of 0.3mW/mA were obtained for an as cleaved device. The single mode yield was as high as 80%.

Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE

Surface morphology and optical properties of 1.3 mum self-organized InGaAs/GaAs quantum dots structure grown by molecular beam epitaxy have been investigated by atomic force microscopy and photoluminescence measurements. It has been shown that the surface morphology evolution and emission wavelengths of InGaAs/GaAs QDs can be controlled effectively via cycled monolayer deposition methods due to the reduction of the surface strain. Our results provide important information for optimizing the epitaxial parameters for obtaining 1.3 mum long wavelength emission quantum dots structures. (C) 2002 Elsevier Science B.V. All rights reserved.

Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure

Microphotoluminescence (mu-PL) investigation has been performed at room temperature on InAs quantum dot (QD) vertical cavity surface emitting laser (VCSEL) structure in order to characterize the QD epitaxial structure which was designed for 1.3 mu m wave band emission. Actual and precise QD emission spectra including distinct ground state (GS) and excited state (ES) transition peaks are obtained by an edge-excitation and edge-emission (EEEE) mu-PL configuration. Conventional photoluminescence methods for QD-VCSELs structure analysis are compared and discussed, which indicate the EEEE mu-PL is a useful tool to determine the optical features of the QD active region in an as-grown VCSEL structure. Some experimental results have been compared with simulation results obtained with the aid of the plane-wave admittance method. After adjustment of epitaxial growth according to EEEE mu-PL measurement results, QD-VCSEL structure wafer with QD GS transition wavelength of 1300 nm and lasing wavelength of 1301 nm was obtained.

1.54 mu m near-infrared photoluminescent and electroluminescent properties of a new Erbium (111) organic complex

The crystal structure of Er(PM)(3)(TP)(2) [PM = 1-Phenyl-3-methyl-4-isobutyryl-5-pyrazoloiie, TP = triphenyl phosphine oxide] was reported and its photoluminescence properties were studied by UV-vis absorption, excited, and emission spectra. The Judd-ofelt theory was introduced to calculate the radiative transition rate and the radiative decay time of 3.65 ms for the I-4(13/2) -> I-4(15/2) transition of Er3+ ion in this complex.

Fabrication and spectroscopic broadening properties for 1.5 mu m amplification of Er3+-doped BaF2 nanoparticles

We show the potential application of Er3+-doped BaF2 nanoparticles prepared from microemulsion technology for 1.5 mu m amplification in telecommunication. Nanoparticles with different sizes of about 8, 10, and 20.5 nm were prepared. The XRD patterns showed the excursion of diffraction peaks. When the particle size is smaller or the diffraction angle is larger, this kind of excursion will be more serious.

1.54 mu m infrared photoluminescence and electroluminescence from an erbium organic compound

Infrared emission at 1.54 mu m excited optically and electrically from an erbium organic compound tris(acetylacetonato)(1,10-phenanthroline) erbium [Er(acac)(3)(phen)] is observed. The rare-earth complex is dispersed into a polymer matrix of poly(N-vinylcarbazole) (PVK) to fabricate an electroluminescent (EL) device with an ITO/PVK:Er(acac)(3)(phen)/Al:Li/Ag structure, where ITO represents indium-tin-oxide-coated glass. The device shows infrared EL emission at 1.54 mu m, which suggests a simple and cheap method to obtain a light source for 1.54-mu m-wavelength devices in optical communications. (C) 2000 American Institute of Physics. [S0021-8979(00)00301-7].

Improved fluorescence from Tm3+/Er3+/Ce3+ triply doped bismuth-silicate glasses for S+C-bands amplifiers

Fluorescence of Tm3+/Er3+ codoped bismuth-silica (BS) glasses and the sensitization of Ce3+ are investigated. It shows that Ce3+ codoping with Tm3+/Er3+ in BS glasses results in a quenching of Tm3+ ion emission from F-3(4) to the H-3(6) level. Consequently, the 1.47 mu m emission occurs after the population inversion between the H-3(4) and F-3(4) levels. Furthermore, the codoped glasses show the broad emission spectra over the whole S and C bands with full-width at half-maximum (FWHM) up to about 119nm, as it combines 1.55 mu m emission band of Er3+ with 1.47 mu m emission band of Tm3+ under 800nm excitation.

CW-pumped evanescent amplification based on side-polished fiber with heavily Er3+-doped glass overlay

A novel diffractive-pumping scheme is proposed to improve the evanescent amplification using blazed fiber grating for the first time. We also investigate the cw-pumped-evanescent amplification at 1.55 mu m wavelength with the relative optical gain pumped at 1480 nm of around 2 dB based on side-polished fiber with the effective interaction length as long as 16 mm and with a heavily Er3+-doped (N-Er(3+) > 1.19 x 10(21) ions/cm(3)), low refractive index (n(1550) < 1.47) glass overlay, which has no concentration quenching (tau(f) = 9.0 ms).

Growth and spectral properties of Gd2SiO5 crystal codoped with Er and Yb

Gd2SiO5 (GSO) single crystal codoped with Yb3+ and Er3+ (Abbr. as Er:Yb:GSO) was successfully grown by the Czochralski (CZ) method for the first time and the spectral characteristics were investigated. The absorption and fluorescence spectra were measured. The emission lifetime of the I-4(13/2)-Er-level was measured to be 5.84ms and the emission cross-section at 1529nm was calculated to be 1.03 x 10(-20) cm(2). The results indicate that Er:Yb:GSO is a potential laser material at similar to 1. 55 mu m wavelength region. (c) 2006 Elsevier B.V. All rights reserved.

High efficiency and broad bandwidth grating coupler between nanophotonic waveguide and fibre

A high efficiency and broad bandwidth grating coupler between a silicon-on-insulator (SOI) nanophotonic waveguide and fibre is designed and fabricated. Coupling efficiencies of 46% and 25% at a wavelength of 1.55 mu m are achieved by simulation and experiment, respectively. An optical 3 dB bandwidth of 45 nm from 1530 nm to 1575 nm is also obtained in experiment. Numerical calculation shows that a tolerance to fabrication error of 10 nm in etch depth is achievable. The measurement results indicate that the alignment error of +/-2 mu m results in less than 1 dB additional coupling loss.

Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition

We report on normal incidence p-i-n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate. The diodes were fabricated by ultrahigh vacuum chemical vapor deposition at 600 degrees C without thermal annealing and allowing the integration with standard silicon processes. Due to the 0.14% residual tensile strain generated by the thermal expansion mismatch between Ge and Si, an efficiency enhancement of nearly 3-fold at 1.55 mu m and the absorption edge shifting to longer wavelength of about 40 nm are achieved in the epitaxial Ge films. The diode with a responsivity of 0.23 A/W at 1.55 mu m wavelength and a bulk dark current density of 10 mA/cm(2) is demonstrated. These diodes with high performances and full compatibility with the CMOS processes enable monolithically integrating microphotonics and microelectronics on the same chip.

Paired interference 3-dB coupler based on SOI rib waveguides with anisotropic chemical wet etching

A 3-dB paired interference (PI) optical coupler in silicon-on-insulator (SOI) based on rib waveguides with trapezoidal cross section was designed with simulation by a modified finite-difference beam propagation method (FD-BPM) and fabricated by potassium hydroxide (KOH) anisotropic chemical wet etching. Theoretically, tolerances of width, length, and port distance are more than 1, 100, and 1 mu m, respectively. Smooth interface was obtained with the propagation loss of 1.1 dB/cm at the wavelength of 1.55 mu m. The coupler has a good uniformity of 0.2 dB and low excess loss of less than 2 dB.

Self-pulsation in a two-section DFB laser with a varied ridge width

A 1.55 mu m InGaAsP-InP two-section DFB laser with a variable ridge width has been fabricated. Self-pulsations with frequencies around 3 GHz and 40 GHz are observed. The pulsation mechanisms related to the two frequencies are discussed and the tunability of generated self-pulsations is studied.

A novel butt-joint scheme for the preparation of electro-absorptive lasers

A 1.55 mu m InGaAsP/InGaAsP multiple-quantum-well electro-absorption modulator (EAM) monolithically integrated with a distributed feedback laser (DFB) diode has been realized based on a novel butt-joint scheme by ultra-low metal-organic vapour phase epitaxy for the first time. The threshold current of 25 mA and an extinction ratio of more than 30 dB are obtained by using the novel structure. The beam divergence angles at the horizontal and vertical directions are as small as 19.3 degrees x 13 degrees, respectively, without a spot-size converter by undercutting the InGaAsP active region. The capacitance of the ridge waveguide device with a deep mesa buried by polyimide was reduced down to 0.30 pF.