Prediction of GC retention values under various column temperature conditions from temperature programmed data

A numerical approach has been developed for the correlation of retention limes (total retention lime) with temperature in gas chromatography, which allows the calculation of retention parameters including retention index from data acquired under two or more different temperature program conditions. By using this procedure the optimization of temperature condition can be further achieved, especially when a temperature-programmed run is the most suitable mode in the preliminary development of an analytical method for the analysis of an unknown sample.

Resolution prediction and optimization of temperature programme in comprehensive two-dimensional gas chromatography

A model is developed for predicting the resolution of interested component pair and calculating the optimum temperature programming condition in the comprehensive two-dimensional gas chromatography (GC x GC). Based on at least three isothermal runs, retention times and the peak widths at half-height on both dimensions are predicted for any kind of linear temperature-programmed run on the first dimension and isothermal runs on the second dimension. The calculation of the optimum temperature programming condition is based on the prediction of the resolution of "difficult-to-separate components" in a given mixture. The resolution of all the neighboring peaks on the first dimension is obtained by the predicted retention time and peak width on the first dimension, the resolution on the second dimension is calculated only for the adjacent components with un-enough resolution on the first dimension and eluted within a same modulation period on the second dimension. The optimum temperature programming condition is acquired when the resolutions of all components of interest by GC x GC separation meet the analytical requirement and the analysis time is the shortest. The validity of the model has been proven by using it to predict and optimize GC x GC temperature programming condition of an alkylpyridine mixture. (c) 2005 Elsevier B.V. All rights reserved.

Prediction of the retentions of polybrominated dibenzo-p-dioxins (PBDDs) by using the retentions of polychlorinated dibenzo-p-dioxins (PCDDs)

The retention equations ln k' = A + B/T of 49 polychlorinated dibenzo-p-dioxins (PCDDs) and 4 polybrominated dibenzo-p-dioxins (PBDDs) in gas chromatography (GC) have been investigated to evaluate the properties of regression coefficients A and B. The quantitative relationships between A and B values of PCDDs and those of PBDDs are found. The regression equations derived have correlation coefficients greater than 0.997. The A, B values of any PBDD can be predicted by using the A, B values of the PCDD according to these relationships. Using these predicted A and B values, the retention times of all PBDDs can be predicted at any temperature program. It is very useful to identify the peak position of any PBDD because at present there are only a few standards of PBDDs available. (C) 2000 Elsevier Science Ltd. All rights reserved.

Quantitative relationship between chromatographic retentions and molecular structures of polychlorinated dibenzo-p-dioxins (PCDDs)

A new approach to study the quantitative relationships between chromatographic retentions and molecular structures of polychlorinated dibenzo-p-dioxins (PCDDs) is described. The retention equations of PCDDs log k' = A + B/T in gas chromatography (GC) are used to evaluate the properties of the regression coefficients A and B, which have been widely accepted as highly reliable chromatographic retentions. The quantitative relationships between the A, B values and the molecular structures are found. The molecular descriptors given for the first time in this article are very effective. As a result, the regression equations are derived with correlation coefficients greater than 0.9995. The A, B values of PCDDs with no standards available have been predicted according to these relationships. They are very useful in chromatographic identification. The retention times of all PCDDs can be conveniently predicted at any temperature program. Compared with the data obtained from the relevant experiments, the results of prediction are very accurate. (C) 2000 Elsevier Science Ltd. All rights reserved.

Numerical Study on Flow Field and Temperature Distribution in Growth Process of 200 mm Czochralski Silicon Crystals

The melt flow and temperature distribution in a 200 mm silicon Czochralski furnace with a cusp magnetic field was modeled and simulated by using a finite-volume based FLUTRAPP ( Fluid Flow and Transport Phenomena Program) code. The melt flow in the crucible was focused, which is a result of the competition of buoyancy, the centrifugal forces caused by the rotations of the crucible and crystal, the thermocapillary force on the free surfaces and the Lorentz force induced by the cusp magnetic field. The zonal method for radiative heat transfer was used in the growth chamber, which was confined by the crystal surface, melt surface, crucible, heat shield, and pull chamber. It was found that the cusp magnetic field could strength the dominant counter-rotating swirling flow cell in the crucible and reduce the flow oscillation and the pulling-rate fluctuation. The fluctuation of dopant and oxygen concentration in the growing crystal could thus be smoothed.

Filamentation control in the temperature gradient argon gas

A novel technique of controlling the evolution of the filamentation was experimentally demonstrated in an argon gas-filled tube. The entrance of the filament was heated by a furnace and the other end was cooled with air, which resulted in the temperature gradient distribution along the tube. The experimental results show that multiple filaments are merged into a single filament and then no filament by only increasing the temperature at the entrance of the filament. Also, the filament can appear and disappear after increasing the local temperature and input pulse energy in turn. This technique offers another degree of freedom to control the filamentation and opens a new way for multi-mJ level monocycle pulse generation through filamentation in the noble gas.

Temperature dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials

The dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials in crystalline and amorphous states on temperature was measured and analyzed. The results show that in the crystalline state, the thermal properties monotonically decrease with the temperature and present obvious crystalline semiconductor characteristics. The heat capacity, thermal diffusivity, and thermal conductivity decrease from 0.35 J/g K, 1.85 mm(2)/s, and 4.0 W/m K at 300 K to 0.025 J/g K, 1.475 mm(2)/s, and 0.25 W/m K at 600 K, respectively. In the amorphous state, while the dependence of thermal properties on temperature does not present significant changes, the materials retain the glass-like thermal characteristics. Within the temperature range from 320 K to 440 K, the heat capacity fluctuates between 0.27 J/g K and 0.075 J/g K, the thermal diffusivity basically maintains at 0.525 mm(2)/s, and the thermal conductivity decreases from 1.02 W/m K at 320 K to 0.2 W/m K at 440 K. Whether in the crystalline or amorphous state, Ag8In14Sb55Te23 are more thermally active than Ge2Sb2Te5, that is, the Ag8In14Sb55Te23 composites bear stronger thermal conduction and diffusion than the Ge2Sb2Te5 phase-change memory materials.

Absence of room-temperature ferromagnetism in Al-codoped Zn0.95Co0.05O nanoparticles

Nanocrystalline Zn0.95-xCo0.05AlxO (x=0, 0.01, 0.05) diluted magnetic semiconductors have been synthesized by an auto-combustion method. X-ray diffraction measurements indicated that Al-doped Zn0.95Co0.05O samples had the pure wurtzite structure. X-ray absorption spectroscopy, high-resolution transmission electron microscope, energy dispersive spectrometer and Co 2p core-level photoemission spectroscope analyses indicated that Co2+ substituted for Zn2+ without forming any secondary phases or impurities. Resistance measurements showed that the resistance values of Co and Al codoped samples were still so large in the giga magnitude. Magnetic investigations showed that nanocrystalline Al-doped Zn0.95Co0.05O samples had no indication of room temperature ferromagnetism. (C) 2007 Elsevier B.V. All rights reserved.

Low temperature growth of c-axis oriented AlN films on gamma-LiAlO2 by radio frequency magnetron sputtering

Aluminum nitride (AlN) films were prepared on gamma-LiAlO2 substrates by radio frequency (rf) magnetron sputtering. The influence of substrate temperature (T-s) and nitrogen (N-2) concentration on film growth was investigated. The X-ray diffraction (XRD) results reveal that highly c-axis oriented AlN films can be obtained in the temperature range from room temperature (RT) to 300 degrees C. A smoother surface and a crystalline quality decrease with increasing N-2 concentration have been observed by XRD and atomic force microscopy (AFM) for the films deposited at lower substrate temperature. On the contrary, the degradation of the surface smoothness and the higher crystalline quality can be observed for the films deposited at a higher substrate temperature with N-2-rich ambient. The growth mechanism which leads to different crystalline quality of the films is discussed. (C) 2008 Elsevier B.V. All rights reserved.

Altitudinal Ranging of Black-Crested Gibbons at Mt. Wuliang, Yunnan: Effects of Food Distribution, Temperature and Human Disturbance

We studied the altitudinal ranging of one habituated group of black-crested gibbons (Nomascus concolor) at Dazhaizi, Mt. Wuliang, Yunnan, China, between March 2005 and April 2006. The group ranged from 1,900 to 2,680 m above sea level. Food distribution was the driving force behind the altitudinal ranging patterns of the study group. They spent 83.2% of their time ranging between 2,100 and 2,400 m, where 75.8% of important food patches occurred. They avoided using the area above 2,500 m despite a lack of human disturbance there, apparently because there were few food resources. Temperature had a limited effect on seasonal altitudinal ranging but probably explained the diel altitudinal ranging of the group, which tended to use the lower zone in the cold morning and the higher zone in the warm afternoon. Grazing goats, the main disturbance, were limited to below 2,100 m, which was defined as the high-disturbance area (HDA). Gibbons spent less time in the HDA and, when ranging there, spent more time feeding and travelling and less time resting and singing. Human activities directly influenced gibbon behaviour, might cause forest degradation and create dispersal barriers between populations. Copyright (C) 2010 S. Karger AG, Basel

Effect of water temperature on the growth performance and digestive enzyme activities of Chinese longsnout catfish (Leiocassis longirostris Gunther)

The present study was carried out to investigate the influence of water temperature on the growth performance and digestive enzyme (pepsin, trypsin and lipase) activities of Chinese longsnout catfish. Triplicate groups of Chinese longsnout catfish (35.6 +/- 0.48 g, mean +/- SE) were reared at different water temperatures (20, 24, 28 and 32 degrees C). The feeding rate (FR), specific growth rate (SGR) and feed efficiency ratio (FER) were significantly affected by water temperatures and regression relationships between water temperature and FI, SGR as well as FER were expressed as FR=-0.016T2+0.91T-10.88 (n=12, R2=0.8752), SGR=-0.026T2+1.39T-17.29 (n=12, R2=0.7599) and FER=-0.013T2+0.70T-8.43 (n=12, R2=0.7272). Based on these, the optimum temperatures for FR, SGR and FER were 27.66, 26.69 and 26.44 degrees C respectively. The specific activities of digestive enzymes at 24 or 28 degrees C were significantly higher than that at 20 or 32 degrees C. In addition, there was a significant linear regression between FR or SGR and specific activities of pepsin and lipase, which indicated that pepsin and lipase played important roles in regulating growth through nutrient digestion in Chinese longsnout catfish.

Temperature dependence of hole spin relaxation in ultrathin InAs monolayers

The temperature dependence of hole spin relaxation time in both neutral and n-doped ultrathin InAs monolayers has been investigated. It has been suggested that D'yakonov-Perel (DP) mechanism dominates the spin relaxation process at both low and high temperature regimes. The appearance of a peak in temperature dependent spin relaxation time reveals the important contribution of Coulomb scatterings between carriers to the spin kinetics at low temperature, though electron-phonon scattering becomes dominant at higher temperatures. Increased electron screening effect in the n-doped sample has been suggested to account for the shortened spin relaxation time compared with the undoped one. The results suggest that hole spins are also promising for building solid-state qubits.

Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD

A flat, fully strain-relaxed Si0.72Ge0.28 thin film was grown on Si (1 0 0) substrate with a combination of thin low-temperature (LT) Ge and LT-Si0.72Ge0.28 buffer layers by ultrahigh vacuum chemical vapor deposition. The strain relaxation ratio in the Si0.72Ge0.28 film was enhanced up to 99% with the assistance of three-dimensional Ge islands and point defects introduced in the layers, which furthermore facilitated an ultra-low threading dislocation density of 5 x 10(4) cm (2) for the top SiGe film. More interestingly, no cross-hatch pattern was observed on the SiGe surface and the surface root-mean-square roughness was less than 2 nm. The temperature for the growth of LT-Ge layer was optimized to be 300 degrees C. (C) 2008 Elsevier B.V. All rights reserved.

Growth temperature dependences of InN films grown by MOCVD

We investigate the growth temperature dependences of InN films grown by metal organic chemical vapor deposition (MOCVD). Experimental results indicate that growth temperature has a strong effect on the surface morphology, crystalline quality and electrical properties of the InN layer. The increasing growth temperature broadened the v scan's full-width at half-maximum (FWHM) and roughened the surface morphology; whereas the electrical properties improved: As the temperature increased from 460 degrees C to 560 degrees C, room-temperature Hall mobility increased from 98 cm(2)/V s to nearly 800 cm(2)/V s and carrier concentration dropped from 5.29 x 10(19) cm (3) to 0.93 x 10(19) cm (3). The higher growth temperature resulted in more efficient cracking of NH3, which improved Hall mobility and decreased carrier concentration. (C) 2008 Elsevier B.V. All rights reserved.

Single-photon-emitting diode at liquid nitrogen temperature

We report on the study of a single-photon-emitting diode at 77 K. The device is composed of InAs/GaAs quantum dots embedded in the i-region of a p-i-n diode structure. The high signal to noise ratio of the electroluminescence, as well as the small second order correlation function at zero-delay g((2))(0), implies that the device has a low multiphoton emission probability. By comparing the device performances under different excitation conditions, we have, in detail, discussed the basic parameters, such as signal to noise ratio and g((2))(0), and provided some useful information for the future application. (c) 2008 American Institute of Physics.