Single-photon-emitting diode at liquid nitrogen temperature

We report on the study of a single-photon-emitting diode at 77 K. The device is composed of InAs/GaAs quantum dots embedded in the i-region of a p-i-n diode structure. The high signal to noise ratio of the electroluminescence, as well as the small second order correlation function at zero-delay g((2))(0), implies that the device has a low multiphoton emission probability. By comparing the device performances under different excitation conditions, we have, in detail, discussed the basic parameters, such as signal to noise ratio and g((2))(0), and provided some useful information for the future application. (c) 2008 American Institute of Physics.

National Natural Science Foundation of China 60676054 1073406060625405National Basic Research Program of China 2007CB924904 Knowledge Innovation Program Project of Chinese Academy of Sciences KICX2.YW.W09-1 This work is supported partly by the National Natural Science Foundation of China under Grant Nos. 60676054, 10734060, 60625405, and National Basic Research Program of China 2007CB924904, and the Knowledge Innovation Program Project of Chinese Academy of Sciences KICX2.YW.W09-1.