A modified thermal viscoplastic constitutive law involving the effect of temperature rise rate

At high temperature rise rate, the mechanical properties of 10 # steel were determined experimentally in a very wide range of temperature and strain rates. A new constitutive relationship was put forward, which can fit with the experimental results and describe various phenomena observed in our experiments. Meanwhile, some interesting characteristics about the temperature rise rate, strain and strain rate hardening and thermal softening are also shown in this paper. Finally, the reliability of the constitutive law and the correctness of the constitutive parameters were verified by comparing the calculation results with the experimental data.

Cross spectral purity and its influence on ghost imaging experiments

Pseudo-thermal light has been widely used in ghost imaging experiments. In order to understand the differences between the pseudo-thermal source and thermal source, we propose a method to investigate whether a light source has cross spectral purity (CSP), and experimentally measure the cross spectral properties of the pseudo-thermal light source in near-field and far-field zones. Moreover we present a theoretical analysis of the cross spectral influence on ghost imaging. (c) 2006 Elsevier B.V. All rights reserved.

Measurement of thermal rise-time of a laser diode based on spectrally resolved waveforms

Thermal resistance and thermal rise-time are two basic parameters that affect most of the performances of a laser diode greatly. By measuring waveforms received after a spectroscope at wavelengths varied step-by-step, the spectrally resolved waveforms can be converted to calculate the thermal rise-time. Basic formulas for the spectrum variation of a laser diode and the measurement set-up by using a Boxcar are described in the paper. As an example, the thermal rise-time of a p-side up packaged short-pulse laser diode was measured by the method to be 390 mu s. The method will be useful in characterizing diode lasers and LID modules in high-power applications. (c) 2005 Elsevier B.V. All rights reserved.

Hepatocyte growth factor enhances the generation of high-purity oligodendrocytes from human embryonic stem cells

Generation of homogeneous oligodendrocytes as donor cells is essential for human embryonic stem cell (hESC)-based cell therapy for demylinating diseases. Herein we present a novel method for efficiently obtaining mature oligodendrocytes from hESCs with high purity (79.7 +/- 6.9%), using hepatocyte growth factor (HGF) and G5 supplement(containing insulin, transferrin, selenite, biotin, hydrocortisone, basic fibroblast growth factor and epidermal growth factor) in a four-step method. We induced hESCs into neural progenitors (NP) with HGF (5 ng/ml) and G5 (1 x) supplemented medium in an adherent differentiation system. The purified NPs were amplified in suspension as neurospheres for 1 month, and terminal oligodendrocyte differentiation was then induced by G5 supplement withdrawal and HGF treatment (20 ng/ml). The cells generated displayed typical morphologies of mature oligodendrocytes and expressed oligodendrocyte markers O4 and myelin basic protein (MBP). Our result revealed that HGF significantly enhanced the proliferation of hESC-derived NPs and promoted the differentiation as well as the maturation of oligodendrocytes from NPs. Further studies suggest that HGF/c-Met signaling pathway might play an important role in oligodendrocyte differentiation in our system. Our studies provide a means for generating the clinically relevant cell type and a platform for deciphering the molecular mechanisms that control oligodendrocyte differentiation. (C) 2009 International Society of Differentiation. Published by Elsevier Ltd. All rights reserved.

Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats

In this study, we first present the process of the melt epitaxial (ME) growth method, and the improvement of low-temperature electron mobility of the long-wavelength InAsSb epilayers grown by ME in a fused silica boat. The electrical properties were investigated by van der Pauw measurement at 300 and 77 K. It is seen that the electron mobility of the InAsSb samples grown by graphite boat decreased from 55,700 to 26,600 cm(2)/V s when the temperature was reduced from 300 to 77 K, while for the samples grown by fused silica boat, the electron mobility increased from 52,600 at 300 K to 54,400 cm(2)/V s at 77 K. The electron mobility of 54,400cm(2)/Vs is the best result, so far, for the InAsSb materials with cutoff wavelength of 8-12 mum at 77 K. This may be attributed to the reduction of the carbon contamination by using a fused silica boat instead of a graphite boat. (C) 2002 Elsevier Science B.V. All rights reserved.

Optical characterization of high-purity cubic GaN grown on GaAs (001) substrate by metalorganic chemical vapor deposition

The optical properties of cubic GaN films have been investigated in the temperature range of 10-300 K. Five peaks were observed at 10 K. From the dependence of photoluminescence emissions on the temperature and excitation intensity, we have assigned two of the five peaks (2.926 and 2.821 eV) to donor-acceptor pair (DAP) transitions. Furthermore, these two peaks were found to be related to a common shallow donor involved in the peak position previously reported at 3.150 eV. The intensities of DAP transitions were much weaker than that of excitonic emission even at low temperature, indicating a relatively high purity of our samples. (C) 2000 American Institute of Physics. [S0003-6951(00)00921-9].

Magnetospectroscopy of bound phonons in high purity GaAs

Far infrared magnetophotoconductivity performed on high purity GaAs reveals the existence of fine structures in the resonant magnetopolaron regions. The fine structures are attributed to the presence of bound phonons due to multiphonon processes. We demonstrate that the magnetopolaron energy spectrum consists of bound phonon branches and magnetopolaron branches. Our results also indicate that different phonons are bound to a single impurity, and that the bound phonon in Si-doped GaAs is a quasilocalized mode.

Climate change, sea level rise and integrated coastal zone management: An IPCC approach

Expansion of economic activities, urbanisation, increased resource use and population growth are continuously increasing the vulnerability of the coastal zone. This vulnerability is now further raised by the threat of climate change and accelerated sea level rise. The potentially severe impacts force policy-makers to also consider long-term planning for climate change and sea level rise. For reasons of efficiency and effectiveness this long-term planning should be integrated with existing short-term plans, thus creating an Integrated Coastal Zone Management programme. As a starting point for coastal zone management, the assessment of a country's or region's vulnerability to accelerated sea level rise is of utmost importance. The Intergovernmental Panel on Climate Change has developed a common methodology for this purpose. Studies carried out according to this Common Methodology have been compared and combined, from which general conclusions on local, regional and global vulnerability have been drawn, the latter in the form of a Global Vulnerability Assessment. In order to address the challenge of coping with climate change and accelerated sea level rise, it is essential to foresee the possible impacts, and to take precautionary action. Because of the long lead times needed for creating the required technical and institutional infrastructures, such action should be taken in the short term. Furthermore, it should be part of a broader coastal zone management and planning context. This will require a holistic view, shared by the different institutional levels that exist, along which different needs and interests should be balanced.

An Efficient Nanocrystalline La2O3:Tm3+ Blue Phosphor for Field-Emission Displays with High Color Purity

Nanocrystalline Tm3+-doped La2O3 phosphors were prepared through a Pechini-type sol-gel process. X-ray diffraction, field-emission scanning electron microscopy, photoluminescence, and cathodoluminescence spectra were utilized to characterize the synthesized phosphors. Under the excitation of UV light (234 nm) and low-voltage electron beams (1-3 kV), the Tm3+-doped La2O3 phosphors show the characteristic emissions of Tm3+(D-1(2), (1)G(4)-F-3(4), H-3(6) transitions).