EPITAXIAL-GROWTH OF HIGH-PURITY GAAS IN AN ARGON ATMOSPHERE

Autoria(s): LIN YW; ZHANG YY; LI HL; LIANG JW; LIN LY
Data(s)

1984
Identificador

http://ir.semi.ac.cn/handle/172111/14745

http://www.irgrid.ac.cn/handle/1471x/101407
Idioma(s)

英语
Fonte

LIN YW; ZHANG YY; LI HL; LIANG JW; LIN LY.EPITAXIAL-GROWTH OF HIGH-PURITY GAAS IN AN ARGON ATMOSPHERE,JOURNAL OF CRYSTAL GROWTH ,1984,70(0):108-111
Palavras-Chave #半导体材料
Tipo

期刊论文
Acesso ao item digital