CCD扫描检测光束准直度

提出一种检测光束准直度的新方法。在对波面矢高进行定义的基础上，提出CCD轴向扫描检测激光束准直度的方法。利用采样光波在会聚透镜后形成的衍射图样，测量两个相同基准衍射图样之间的距离，即可确定入射光波的波面矢高，进而确定入射光波的准直度。在给出测量原理及模拟基准衍射图样的基础上．进行了实验验证。CCD轴向扫描方法具有结构简单、加工便利、操作方便的特点，是检测光束准直度的有效方法。

Observing the fractional Fourier transform by free-space Fresnel diffraction

The fractional Fourier transform of an object can be observed in the free-space Fresnel diffraction pattern of the object. (C) 1997 Optical Society of America

Investigation of periodicity fluctuations in strained (GaNAs)(1)(GaAs)(m) superlattices by the kinematical simulation of x-ray diffraction

Periodicity fluctuations of layer thickness and composition in a superlattice not only decrease the intensity, they also broaden the width of the satellite peaks in the x-ray diffraction pattern. In this letter, we develop a method that is dependent on the width of satellite peaks to assess periodicity fluctuations of a superlattice quickly. A linear relation of the magnitude of fluctuations, peak width and peak order has been derived from x-ray diffraction kinematical theory. By means of this method, periodicity fluctuations in strained (GaNAs)(1)(GaAs)(m) superlattices grown on GaAs substrates by molecular beam epitaxy have been studied. Distinct satellite peaks indicate that the superlattices are of high quality. The N composition of 0.25 and its fluctuation of 20% in a strained GaNxAs1-x monolayer are obtained from simulations of the measured diffraction pattern. The x-ray simulations and in situ observation results of reflection high-energy electron diffraction are in good agreement. (C) 1999 American Institute of Physics. [S0003-6951(99)00828-1].

Effect of Pb Volatilization on Dielectric Properties of 0.77PbMg1/3(Nb0.9Ta0.1)2/3O3-0.23PbTiO3

Lead magnesium niobate-lead titanate (PMN-PT) is an intriguing candidate for applications in many electronic devices such as multi-layer capacitors, electro-mechanical transducers etc. because of its high dielectric constant, low dielectric loss and high strain near the Curie temperature. As an extension of our previous work on Ta-doped PMNT-PT aimed at optimizing the performance and reducing the cost, this paper focuses on the effect of Pb volatilization on the dielectric properties of 0.77Pb(Mg1/3(Nb0.9Ta0.1)2/3)O3-0.23PbTiO3. The dielectric constant and loss of the samples are measured at different frequencies and different temperatures. The phase purity of this compound is determined by X-ray diffraction pattern. It is found that the volatilization during sintering does influence the phase formation and dielectric properties. The best condition is sintering with 0.5 g extra PbO around a 4 g PMNT-PT sample.

高精度微结构聚合物光栅的复制技术

光栅复制是降低光栅制造成本,提高产量的一条有效途径。研究了利用紫外压印技术复制微结构光栅的方法。使用玻璃基底矩形浮雕结构的微结构光栅作为母光栅,给出了利用聚二甲基硅氧烷(PDMS)制作光栅模具和在光敏聚合物材料上复制微结构光栅的详细过程。经过优化工艺条件,成功地复制了一系列不同周期和开口比的微结构光栅,测试了复制光栅和母光栅的衍射图像和0级与±1级的衍射强度,结果表明,复制光栅和母光栅的衍射图像与光强分布基本一致。

Wave-front analysis method of circular aperture sampling for collimation testing

A new type of wave-front analysis method for the collimation testing of laser beams is proposed. A concept of wave-front height is defined, and, on this basis, the wave-front analysis method of circular aperture sampling is introduced. The wave-front height of the tested noncollimated wave can be estimated from the distance between two identical fiducial diffraction planes of the sampled wave, and then the divergence is determined. The design is detailed, and the experiment is demonstrated. The principle and experiment results of the method are presented. Owing to the simplicity of the method and its low cost, it is a promising method for checking the collimation of a laser beam with a large divergence. © 2005 Optical Society of America.

Highly sensitive wave-front sensor with a non-zero-order phase plate

We propose a novel highly sensitive wave front detection method for a quick check of a flat wave front by taking advantage of a non-zero-order pi phase plate that yields a non-zero-order diffraction pattern. When a light beam with a flat wave front illuminates a phase plate, the zero-order intensity is zero. When there is a slight distortion of the wave front, the zero-order intensity increases. The ratio of first-order intensity to that of zero-order intensity is used as the criterion with which to judge whether the wave front under test is flat, eliminating the influence of background light. Experimental results demonstrate that this method is efficient, robust, and cost-effective and should be highly interesting for a quick check of a flat wave front of a large-aperture laser beam and adaptive optical systems. (c) 2005 Optical Society of America.

Radius of curvature measurements for laser beams: A simple method

A simple method for measuring the radius of curvature of laser beams is introduced. It has been developed to estimate the astigmatic aberration of a diode laser. Compared with the interferornetry, this method is convenient and straightforward. (c) 2005 Elsevier GmbH. All rights reserved.

New approach to superresolution

We propose a new method to increase the resolution of an optical system by modifying part of the spatial-frequency spectrum, viz., displacing the lower-frequency light to a high-frequency band, which makes the central maximum in the diffraction pattern narrower and increases the depth of focus. Simulation results show that this kind of apodizer (the term apodization was originally used to describe ways to reduce the sidelobes of the PSF, but in this paper, we use it in a wider sense) is superior to the phase-shifting ones. (C) 2001 Society of Photo-Optical Instrumentation Engineers.

水热法生长复合钛宝石激光晶体

水热法生长了复合钛宝石(Al2O3／Ti：Al2O3)激光晶体．对外层Al2O3X射线ω扫描表明其晶体质量很高．外层生长的Al2O3和内部的钛宝石激光棒结合牢固、紧密，因而能适应高强度泵浦所带来的激光介质内部的热应力．复合激光晶体界面层带来的光损耗很小．就我们所知，这是首次用水热法生长复合激光晶体．

Surface morphology and properties of zirconia thin films prepared at different deposition rates

ZrO2 thin films were prepared on BK7 glass substrates by electron beam evaporation deposition method. The influence of deposition rate varying from 1.2 to 6.3 nm s(-1) on surface morphology and other properties of ZrO2 films were examined. With increasing deposition rate, the surface defect density increased. The decrease in half width at full maximum in X-ray diffraction pattern with deposition rate indicates an increase in crystal dimension with increasing deposition rate. Electron beam deposited ZrO2 films are known to be inhomogeneous. From the change of the peak transmittance value, it can be deduced that the inhomogeneity of ZrO2 films strengthened gradually with increasing deposition rate. The type of surface defects changed from nodules to craters when the deposition rate was high enough.

Enhancement of 1.53 mu m photoluminescence from spin-coated Er-Si-O (Er2SiO5) crystalline films by nitrogen plasma treatment

Er-Si-O (Er2SiO5) crystalline films are fabricated by the spin-coating and subsequent annealing process. The fraction of erbium is estimated to be 21.5 at% based on Rutherford backscattering measurement. X-ray diffraction pattern indicates that the Er-Si-O films are similar to Er2SiO5 compound in the crystal structure. The fine structure of room-temperature photoluminescence of Er3+-related transitions suggests that Er has a local environment similar to the Er-O-6 octahedron. Our preliminary results show that the intensity of 1.53 mu m emission is enhanced by a factor of seven after nitrogen plasma treatment by NH3 gas with subsequent post-annealing. The full-width at half-maximum of 1.53 pm emission peak increases from 7.5 to 12.9 nm compared with that of the untreated one. Nitrogen plasma treatment is assumed to tailor Er3+ local environment, increasing the oscillator strength of transitions and thus the excitation/emission cross-section. (c) 2005 Elsevier B.V. All rights reserved.

Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE

Epitaxial growth of AlN has been performed by molecular beam epitaxy (MBE) with ammonia. The structural properties of materials were studied by cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD), and atomic force microscopy (AFM). XRD and TEM diffraction pattern confirm the AlN is single crystalline 2H-polytype with the epitaxial relationship of (0001)AlNparallel to(111)Si, [11 (2) over bar0](AlN)parallel to[110](Si), [10 (1) over bar0](AlN)parallel to[11 (2) over bar](Si). Micro-Raman scattering measurement shows that the E-2 (high) and A(1) (LO) phonon mode shift 9 cm(-1) toward the low frequency, which shows the existence of large tensile strain in the AlN films. Furthermore, the appearance of forbidden A, (TO) mode and its anomalous shift toward high frequency was found and explained. (C) 2002 Elsevier Science B.V. All rights reserved.

Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy

The optimum growth condition of GaInNAs/GaAs quantum wells (QWs) by plasma-assisted molecular beam epitaxy was investigated. High-resolution X-ray diffraction and photoluminescence (PL) measurements showed that ion damage drastically degraded the quality of GaNAs and GaInNAs QWs and that ion removal magnets can effectively remove the excess ion damage. Remarkable improvement of PL intensity and obvious appearance of pendellosung fringes were observed by removing the N ions produced in the plasma cell. When the growth rate increased from 0.73 to 1.2 ML/s, the optimum growth temperature was raised from 460 degreesC to 480 degreesC and PL peak intensity increased two times. Although the N composition decreased with increasing growth rate, degradation of optical properties of GaInNAs QWs was observed when the growth rate was over 0.92 ML/s. Due to low-temperature growth of GaInNAs QWs, a distinctive reflection high-energy electron diffraction pattern was observed only when the GaAs barrier was grown under lower As-4 pressure. The samples with GaAs barriers grown under lower As-4 pressure (V/III ratio about 24) exhibited seven times increase in PL peak intensity compared with those grown under higher As-4 pressure (V/III ratio about 50). (C) 2001 Elsevier Science B,V. All rights reserved.

Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy

The effect of ion-induced damage on GaNAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy employing a DC plasma as the N source was investigated. Ion-induced damage results in: (i) an observed disappearance of pendellosung fringes in the X-ray diffraction pattern of the sample; (ii) a drastic decrease in intensity and a broadening in the full-width at half-maximum of photoluminescence spectra. It was shown that ion-induced damage strongly affected the bandedge potential fluctuations of the QWs. The bandedge potential fluctuations for the samples grown with and without ion removal magnets (IRMs) are 44 and 63 meV, respectively. It was found that the N-As atomic interdiffusion at the interfaces of the QWs was enhanced by the ion damage-induced defects. The estimated activation energies of the N-As atomic interdiffusion for the samples grown with and without IRMs are 3.34 and 1.78 eV, respectively. (C) 2001 Elsevier Science B.V. All rights reserved.