Fractal dimensions for unsaturated porous media

The analytical expressions of the fractal dimensions for wetting and non-wetting phases for unsaturated porous media are derived and are found to be a function of porosity, maximum and minimum pore sizes as well as saturation. There is no empirical constant in the proposed fractal dimensions. It is also found that the fractal dimensions increase with porosity of a medium and are meaningful only in a certain range of saturation S-w, i.e. S-w > S-min for wetting phase and S-w < S-max for non-wetting phase at a given porosity, based on real porous media for requirements from both fractal theory and experimental observations. The present analysis of the fractal dimensions is verified to be consistent with the existing experimental observations and it makes possible to analyze the transport properties such as permeability, thermal dispersion in unsaturated porous media by fractal theory and technique.

Work and energy equations and the principle of generalized effective stress for unsaturated soils

The effective stress principle has been efficiently applied to saturated soils in the soil mechanics and geotechnical engineering practice; however, its applicability to unsaturated soils is still under debate. The appropriate selection of stress state variables is essential for the construction of constitutive models for unsaturated soils. Owing to the complexity of unsaturated soils, it is difficult to determine the deformation and strength behaviors of unsaturated soils uniquely with the previous single-effective-stress variable theory and two-effective-stress-variable theory in all the situations. In this paper, based on the porous media theory, the specific expression of work is proposed, and the effective stress of unsaturated soils conjugated with the displacement of the soil skeleton is further derived. In the derived work and energy balance equations, the energy dissipation in unsaturated soils is taken into account. According to the derived work and energy balance equations, all of the three generalized stresses and the conjugated strains have effects on the deformation of unsaturated soils. For considering these effects, a principle of generalized effective stress to describe the behaviors of unsaturated soils is proposed. The proposed principle of generalized effective stress may reduce to the previous effective stress theory of single-stress variable or the two-stress variables under certain conditions. This principle provides a helpful reference for the development of constitutive models for unsaturated soils.

Structure and Electronic Properties of Saturated and Unsaturated Gallium Nitride Nanotubes

The atomic and electronic structures of saturated and unsaturated GaN nanotubes along the [001] direction with (100) lateral facets are studied using first-principles calculations. Atomic relaxation of nanotubes shows that appreciable distortion occurs in the unsaturated nanotubes. All the nanotubes considered, including saturated and unsaturated ones, exhibit semiconducting, with a direct band gap Surface states arisen from the 3-fold-coordinated N and Ga atoms at the lateral facets exist inside the bulklike band gap. When the nanotubes are saturated with hydrogen, these dangling bond bands are removed from the band gap, but the band gap decreases with increasing the wall thickness of the nanotubes.

Light and annealing induced changes in Si-H bonds in undoped a-Si : H

Light and annealing induced changes in Si-H bonds in undoped a-Si:H have been investigated by a differential infrared spectroscopy method. The light-induced changes in Si-H bonds are not monotonic, quite different from the usual Staebler-Wronski effect in electronic properties, and involve more complicated physics. The magnitude of the light-induced changes in Si-H bonds is proportional to the hydrogen content in the film. There may exist more than one microscopic process which determine the light-induced changes in Si-H bonds. Almost the whole a-Si:H network is affected when a-Si:H is subjected to Light-soaking or to annealing. The light-induced changes in Si-H bonds may be an independent light-induced phenomenon or an auxiliary process of the metastable SWE defect creation. (C) 2000 Elsevier Science Ltd. All rights reserved.

A NEW METHOD FOR DETECTING SUBTLE CHANGES IN SI-H BONDS OF A-SI-H

A new method developed for detecting possible subtle changes in Si-H bonds of a-Si:H after light soaking is described in detail. The method promises a sensitivity orders of magnitude higher than that reached by the usual IR spectrometer. Some preliminary results on phosphorus doped a-Si:H are given.

Sea surface temperature reconstruction for the middle Okinawa Trough during the last glacial-interglacial cycle using C-37 unsaturated alkenones

IEECAS SKLLQG