Optimizations for the uniformity of the non-volatile volume grating in doubly doped LiNbO3 crystals

The formation of the non-uniformity of the non-volatile volume grating in doubly doped LiNbO3 crystals is studied in detail. We find that the non-uniformity of the grating is mainly caused by strong ultraviolet light absorption, and the average saturation space-charge field is small and the diffraction efficiency is low as a result of the non-uniformity of the grating. In order to optimize the uniformity of the grating, we propose the recording scheme by using two sensitizing beams simultaneously from the two opposite sides of the crystals. Theoretical simulations and experimental verifications are performed. Results show that the well uniformed grating with high diffraction efficiency can be obtained by using this optimization scheme. (c) 2004 Elsevier B.V. All rights reserved.

Improved uniformity of target illumination by combining a lens array and the technique of spectral dispersion

A scheme using a lens array and the technique of spectral dispersion is presented to improve target illumination uniformity in laser produced plasmas. Detailed two-dimensional simulation shows that a quasi-near-field target pattern, of steeper edges and without side lobes, is achieved with a lens array, while interference stripes inside the pattern are smoothed out by the use of the spectral dispersion technique. Moving the target slightly from the exact focal plane of the principal focusing lens can eliminate middle-scale-length intensity fluctuation further. Numerical results indicate that a well-irradiated laser spot with small nonuniformity and great energy efficiency can be obtained in this scheme. (c) 2007 American Institute of Physics.

Layer uniformity of glancing angle deposition

Some results of an investigation on the layer thickness uniformity of glancing angle deposition are presented. A zirconia monolayer has been deposited by glancing angle deposition to analyze the layer thickness uniformity. The experimental results indicate that the thickness variation over the substrate is less than 0. 1%, which is considered as good uniformity. It is found that the non-uniformity of experimental results is larger than that of the theoretical results. (c) 2005 Elsevier Ltd. All rights reserved.

Increasing the genetic uniformity of bighead carp [Aristichthys nobilis (Richardson)] by means of spontaneous diploidization of gynogenetically activated eggs

Three groups of gynogenetic diploid bighead carp were successfully obtained by means of artificial gynogenesis. The activation rates of gynogenesis varied from 75.9% to 98.8%, and the frequency of spontaneous diploidization was around 0.4%. Over 2000 normally gynogenetic diploid fry were obtained in three gynogenetic groups. The haploid karyotype consisted of nine metacentric, 12 submetacentric, three subtelocentric chromosomes and 45 arms. The chromosome number was 48 from gynogenetic diploid. The results showed that the genetic material of offspring was maternal. The aneuploid hybrid embryos of bighead carp and Xingguo red common carp with chromosome numbers ranging from 28 to 73 did not survive post hatch, likely the result of incompatibility between the nucleus and the cytoplasm of two parents. Sixty RAPD primers from three groups were used for total DNA amplification of gynogenetic offspring, maternal and 'paternal' fish. A total of 451 bands were amplified from three kinds of samples above. From maternal bighead carp, 256 bands were amplified; however, there were 251 shared bands between maternal and gynogenetic bighead carp. From artificial gynogenetic offspring, two 'paternal' DNA segments without an expression function were found. An UPGMA tree showed that gynogenetic offspring were closely clustered and the genetic identity among them was very high (0.956).

High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001)

Highly uniform InAs quantum wires (QWRs) have been obtained on the In0.5Al0.5As buffer layer grown on the InP substrate 8 degrees off (001) towards (111) by molecular-beam epitaxy. The quasi-periodic composition modulation was spontaneously formed in the In0.5Al0.5As buffer layer on this misoriented InP (001). The width and period of the In-rich bands are about 10 and 40 nm, respectively. The periodic In-rich bands play a major role in the sequent InAs QWRs growth and the InAs QWRs are well positioned atop In-rich bands. The photoluminescence (PL) measurements showed a significant reduction in full width at half maximum and enhanced PL efficiency for InAs QWRs on misoriented InP(001) as compared to that on normal InP(001). (c) 2006 American Institute of Physics.

Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances

Microdefects originating from impurity-dislocation interactions in undoped InP that had been annealed in phosphorus and iron phosphide ambiances have been studied using optical microscopy. The electrical uniformity of the annealed wafer is improved by removing impurity aggregation around dislocations and by eliminating impurity striations in the annealing process. Compared to as-grown Fe-doped semi-insulating (SI) material, SI wafers obtained by annealing undoped InP in iron phosphide ambiances have better uniformity. This is attributed to the avoidance of Fe aggregation around dislocations and dislocation clusters, Fe precipitation and impurity striations, and is related to the use of a low concentration of Fe in the annealed material. The influence of Fe diffusion on the migration of dislocations in the annealing process has been studied and reviewed. (C) 2003 Elsevier B.V. All rights reserved.

New way to enhance the uniformity of self-organized InAs quantum dots

Growth interruption was introduced after the deposition of GaAs cap layer, which is thinner than the mean height of Quantum dots. Uniformity of quantum dots has been enhanced because the full width of half maximum of photoluminescence decrease from 80meV to 27meV in these samples as the interruption time increasing from 0 to 120 second. Meanwhile, we have observed that the peak position of photoluminescence is a function of interruption time. This effect can be used to control the energy level of quantum dots. The phenomena mentioned above can be attributed to the diffusion of In atoms from the top of InAs islands to the top of GaAs cap layer caused by the difference of surface energies between InAs and GaAs.

Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers

Semi-insulating (SI) InP wafers of 2 and 3 in. diameters have been prepared by annealing undoped LEC InP at 930 degreesC for 80 h under pure phosphorus ambient (PP) and iron phosphide ambient (IP). The electrical uniformity of annealed undoped SI wafers, along with a Fe-doped as-grown SI LEC InP wafer, has been characterized by whole wafer PL mapping and radial Hall measurements. Defects in these wafers have been detected by photo-induced current transient spectroscopy (PICTS). The results indicated that the uniformity of IP wafer is much better than that of PP wafer and as-grown Fe-doped Si InP wafer. There are fewer traps in undoped SI InP IP wafer than in as grown Fe-doped and undoped SI InP PP wafer, as evidenced by PICTS. The good uniformity of the IP wafer is related to the nonexistence of high concentration of thermally induced defects. The mechanism for this phenomenon is discussed based on the results. (C) 2002 Elsevier Science B.V. All rights reserved.

The effect of dopant Si on the uniformity of self-organized InAs quantum dots

The photoluminescence in directly si-doped self-organized InAs quantum dots was systematically studied. With doping, a decrease in linewidth and a little blue shift in peak were observed by PL measurement. The results show that direct doping when growing InAs layer may be helpful to the formation of uniform small quantum dots. The work will be meaningful for the fabrication of self-organized InAs quantum dots semiconductor device.

Indium composition dependence of the size uniformity of InGaAs quantum dots on (311)B GaAs grown by molecular beam epitaxy

The deposition of InxGa1-xAs (0.2 less than or equal to x less than or equal to 0.5) on (311)B GaAs surfaces using solid source molecular beam epitaxy (MBE) has been studied. Both AFM and photoluminescence emission showed that homogeneous quantum dots could be formed on (311)B GaAs surface when indium composition was around 0.4. Indium composition had a strong influence on the size uniformity and the lateral alignment of quantum dots. Compared with other surface orientation, (100) and (n11) A/B (n=1,2,3), photoluminescence measurement confirmed that (311)B surface is the most advantageous in fabricating uniform and dense quantum dots.

Effect of dopant on the uniformity of InAs self-organized quantum dots

Low-temperature photoluminescence studies have been performed on Si-doped and Be-doped self-organized InAs/GaAs quantum dot (QD) samples to investigate the effect of doping. When Si or Be is doped into the sample, a remarkable decrease in line-width is observed. We relate this phenomenon to a model that takes the Si or Be atoms as the nucleation centers for the formation of QDs. When Si or Be is doped, more small uniform quantum dots are formed. The result will be of significance for the application of self-organized InAs quantum dots in semiconductor devices.

EFFECT OF DOPANT ON THE UNIFORMITY OF InAsSELF-ORGANIZED QUANTUM DOTS

于2010-11-23批量导入

New way to enhance the uniformity of self-organized InAs quantum dots

Growth interruption was introduced after the deposition of GaAs cap layer, which is thinner than the mean height of Quantum dots. Uniformity of quantum dots has been enhanced because the full width of half maximum of photoluminescence decrease from 80meV to 27meV in these samples as the interruption time increasing from 0 to 120 second. Meanwhile, we have observed that the peak position of photoluminescence is a function of interruption time. This effect can be used to control the energy level of quantum dots. The phenomena mentioned above can be attributed to the diffusion of In atoms from the top of InAs islands to the top of GaAs cap layer caused by the difference of surface energies between InAs and GaAs.