Effect of dopant on the uniformity of InAs self-organized quantum dots

Low-temperature photoluminescence studies have been performed on Si-doped and Be-doped self-organized InAs/GaAs quantum dot (QD) samples to investigate the effect of doping. When Si or Be is doped into the sample, a remarkable decrease in line-width is observed. We relate this phenomenon to a model that takes the Si or Be atoms as the nucleation centers for the formation of QDs. When Si or Be is doped, more small uniform quantum dots are formed. The result will be of significance for the application of self-organized InAs quantum dots in semiconductor devices.