Effect of Pb Volatilization on Dielectric Properties of 0.77PbMg1/3(Nb0.9Ta0.1)2/3O3-0.23PbTiO3

Lead magnesium niobate-lead titanate (PMN-PT) is an intriguing candidate for applications in many electronic devices such as multi-layer capacitors, electro-mechanical transducers etc. because of its high dielectric constant, low dielectric loss and high strain near the Curie temperature. As an extension of our previous work on Ta-doped PMNT-PT aimed at optimizing the performance and reducing the cost, this paper focuses on the effect of Pb volatilization on the dielectric properties of 0.77Pb(Mg1/3(Nb0.9Ta0.1)2/3)O3-0.23PbTiO3. The dielectric constant and loss of the samples are measured at different frequencies and different temperatures. The phase purity of this compound is determined by X-ray diffraction pattern. It is found that the volatilization during sintering does influence the phase formation and dielectric properties. The best condition is sintering with 0.5 g extra PbO around a 4 g PMNT-PT sample.

硅化物表面与硅化物/硅界面研究——FeSi表面氧吸附与（Cr,pt）硅化物/硅界面研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Localized-Surface-Plasmon Enhanced the 357 nm Forward Emission from ZnMgO Films Capped by Pt Nanoparticles

The Pt nanoparticles (NPs), which posses the wider tunable localized-surface-plasmon (LSP) energy varying from deep ultraviolet to visible region depending on their morphology, were prepared by annealing Pt thin films with different initial mass-thicknesses. A sixfold enhancement of the 357 nm forward emission of ZnMgO was observed after capping with Pt NPs, which is due to the resonance coupling between the LSP of Pt NPs and the band-gap emission of ZnMgO. The other factors affecting the ultraviolet emission of ZnMgO, such as emission from Pt itself and light multi-scattering at the interface, were also discussed. These results indicate that Pt NPs can be used to enhance the ultraviolet emission through the LSP coupling for various wide band-gap semiconductors.

Thermal annealing behaviour of Pt on n-GaN Schottky contacts

The structural evolution and temperature dependence of the Schottky barrier heights of Pt contacts on n-GaN epilayer at various annealing temperatures were investigated extensively by Rutherford backscattering spectrometry, x-ray diffraction measurements, Auger electron spectroscopy, scanning electron microscopy and current-voltage measurements. The temperature dependence of the Schottky barrier heights may be attributed to changes of surface morphology of Pt films on the surface and variation of nonstoichiometric defects at the interface vicinity. Experimental results indicated the degradation of Pt contacts on n-GaN above 600 degreesC.

Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers

Gallium nitride (GaN)-based Schottky junctions were fabricated by RF-plasma-assisted molecular beam epitaxy (MBE). The GaN epitaxial layers were deposited on novel double buffer layers that consist of a conventional low-temperature buffer layer (LTBL) grown at 500 degreesC and an intermediate-temperature buffer layer (ITBL) deposited at 690 degreesC. Low-frequency excess noise and deep level transient Fourier spectroscopy (DLTFS) were measured from the devices. The results demonstrate a significant reduction in the density of deep levels in the devices fabricated with the GaN films grown with an ITBL. Compared to the control sample, which was grown with just a conventional LTBL, a three-order-of-magnitude reduction in the deep levels 0.4 eV below the conduction band minimum (Ec) is observed in the bulk of the thin films using DLTFS measurements.

Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode

In this paper, platinum (Pt) with a thickness of 45 nm was sputtered on the surface of AlGaN/GaN heterostructure to form the Schottky contact and the back-to-back Schottky diodes were characterized for H-2 sensing at room temperature. Both the forward and reverse current of the devices increased with exposure to H-2 gas, which was attributed to Schottky barrier height reduction caused by hydrogen absorption in the catalytic metals. A shift of 0.7 V at 297 K was obtained at a fixed forward current of 0.1 mA after switching from N-2 to 40% H-2 in N-2. The sensor's responses under different concentrations from 2500 ppm H-2 to 40% H-2 in N-2 at 297 K were investigated. Time response of the sensor at a fixed bias of 1 V was given. Finally, the decrease of the Schottky barrier height and the sensitivity of the sensor were calculated. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R

Pt/AlGaN/AlN/GaN Schottky diodes have been fabricated and characterized for H-2 sensing. Platinum (Pt) with a thickness of 20nm was evaporated on the sample to form the Schottky contact. The ohmic contact, formed by evaporated Ti/Al/Ni/Au metals, was subsequently annealed by a rapid thermal treatment at 860 degrees C for 30 s in N-2 ambience. Both the forward and reverse current of the device increased greatly when exposed to H-2 gas. The sensor's responses under different hydrogen concentrations from 500ppm to 10% H-2 in N-2 at 300K were investigated. A shift of 0.45V at 297K is obtained at a fixed forward current for switching from N-2 to 10% H-2 in N-2. Time response of the sensor at a fixed bias of 0.5 V was also measured. The turn-on response of the device was rapid, while the recovery of the sensor at N-2 atmosphere was rather slow. But it recovered quickly when the device was exposed to the air. The decrease in the barrier height of the diode was calculated to be about 160meV upon introduction of 10% H-2 into the ambient. The sensitivity of the sensor is also calculated. Some thermodynamics analyses have been done according to the Langmuir isotherm equation.

CFCs和PT方程

CFCs问题引来了广泛的研究.本文概述了CFCs问题.对于状态方程，讨论了1982年发表的PT方程。由此进一步比较讨论了RKS 和PR方程，另外总结了立方型方程的通式.这些对CFCs新工质的模拟计算都具有现实价值.

全固态电流型氧传感器及Pt-Fe复合催化剂的研究

控制电位电解型即电流型气体传感器由于具有检测气体种类多、浓度范围宽、体积小、价格低、测量精度高、可用于现场直接检测等优点，在环境监测与安全生产等领域中得到了广泛应用。本文论述了纳米级铂、碳纳米管负载铂及铂铁催化剂的合成方法，并对其进行了物理化学表征和电化学研究，主要结果如下： 采用柠檬酸钠还原的方法，合成了纳米级铂催化剂。TEM和XRD测试表明，该球形多晶铂的粒径为2－5nm。用此种铂催化剂制备了离子交换膜电极复合体，并组装了全固态电流型氧传感器；在对低浓度氧气进行测试时，具有高的灵敏度、较短的响应时间、较低的底电流和噪声，且响应信号与氧气的浓度呈良好的线性关系。 1．利用空气氧化和硝酸相结合对多壁碳纳米管进行了纯化，并利用1:1的H2SO4-HNO3混酸使其表面羧基化，TEM和CV测试表明多壁碳纳米管达到了纯化和表面官能团化的目的。 2．利用喷雾冷却法制备了多壁碳纳米管负载的铂及铂铁合金纳米级催化剂复合体，并利用TEM、EDS、XRD、ICP等进行了表征；在循环伏安扫描中，铂铁合金催化剂呈现较高的比表面积。将多壁碳纳米管负载的铂及铂铁合金纳米级催化剂应用于C1有机小分子的电化学氧化研究中发现，铂铁合金催化剂具有较高的催化活性.

贵金属（Au, Ag, Pt, Pd）纳米材料的可控合成及性能研究

功能化的贵金属纳米材料的设计和可控制备在材料科学研究领域引起了人们广泛的关注。贵金属纳米材料的光学、电学、磁学和催化等物理和化学性质不但与其大小有关，而且还与其形貌息息相关。因此寻求简单而有效的低温溶液合成途径以实现对贵金属纳米材料的尺寸和形貌控制尤为重要。本论文的主要研究内容可以归纳如下： (1)在水溶液中利用种子生长方法分别制备了核壳Au-Pd/Pt三金属复合纳米粒子和三层的核壳AuAg复合纳米粒子。这些纳米粒子的尺寸和组成可以通过改变金种子的加入量来加以调控。 (2)通过种子生长和取代沉积相结合的方法制备了具有金核铂/银双金属壳的铃铛状纳米粒子。通过扫描电子显微镜、透射电子显微镜和X-射线光电子能谱对所得纳米粒子的尺寸、结构和组成进行了表征。 (3)以二肽甘氨酰甘氨酸作为模板合成了具有[111]取向的单晶银纳米片。通过改变实验条件探讨了片状银纳米结构的形成机理。片状银纳米结构的产率可达到80%，反应物之间的摩尔比对产物的尺寸和形貌有至关重要的作用。 (4)将K3[Fe(CN)6]和Na2S2O3的混合溶液进行水热处理，得到了具有立方体形貌的FeIIIFeIII(CN)6（柏林绿）微晶。实验结果显示K3[Fe(CN)6]和Na2S2O3的摩尔比及其浓度对所得产物的尺寸、形貌和组成有决定性的作用。 (5)在室温下通过混合3, 3', 5, 5'-四甲基联苯胺和氯铂酸，成功合成了有机-无机杂化的纳米纤维。纳米纤维的尺寸和形状可以通过改变反应物的比和浓度加以控制。基于不同的实验结果，提出了纳米纤维的可能形成机理。

稀土墩子和稀土氧化物对甲醇在Pt催化剂上电催化氧化性能的影响

直接甲醇燃料电池( DMFC )具有甲醇来源丰富，价格低廉，在常温常压下是液体，易于携带储存；体积小，重量轻，结构简单，容易操作；维修方便，价格低等优点，近年来得到普遍的关注。然而，要达到DMFC的商品化还存在一些问题。其中一个是阳极催化剂的电催化活性低和易被甲醇氧化的中间产物，如CO毒化。对于甲醇阳极电催化剂人们进行了大量的研究，比较有效的都是Pt－过渡金属或金属氧化物复合催化剂，如Pt－Ru、 Pt－Sn、Pt佩Rh、Pt－Pd、Pt佩Re、Pt－Ru－Sn－W、Pt－WO。和Pt－TIO。等。本文研究了电解液中的稀土离子和与Pt形成复合催化剂的稀土氧化物对甲醇电催化氧化反应的促进作用，得到了如下的结果：1．电解液中的稀土Ho, Eu, Gd或Dy离子对甲醇在光滑Pt电极或DMFC中使用的Pt/C电极上的电催化氧化反应有促进作用，主要表现在的起始氧化电位负移和氧化电流增加。而电解液中加入其它种类的稀土离子对甲醇在光滑Pt电极或Pt/C电极上的电催化氧化反应有阻碍作用，如起始氧化电位正移，峰电流降低。Fu、H食Dy或Gd离子对一甲醇在Pt上的电催化氧化反应有促进作用的主要原因可能与这些稀土离子与甲醇生成配合物能力有关。2．不同Pt一稀土氧化物／C催化剂对甲醇电催化氧化反应有不同的影响。当稀土氧化物是Eu, Ho, Dy或Gd的氧化物时，甲醇在Pt一稀土氧化物／C催化剂上甲醇电催化氧化反应的极化性能和稳定性要优于在Pt/C催化剂上，而在其它的Pt-稀土氧化物／C催化剂上，甲醇电催化氧化的极化性能和稳定性要差于Pt/C电极。用不同方法制备的Pt一稀土氧化物／C催化剂对甲醇电催化氧化反应的促进作用取决于催化剂的制备方法。如先在活性碳上还原沉积Pt，再沉积上稀土氧化物所得的Pt－稀土氧化物／C催化剂的促进作用要优于先在稀土氧化物上还原沉积Pt，再一起沉积到活性碳上或先再活性碳上沉积稀土氧化物，再还原沉积上Pt的方法。另外，Pt和稀上氧化物的原子比为2：1时，pt－稀土氧化物／c催化剂对甲醇电催化氧化反应的催化活性最佳。稀土氧化物对pt／C催化剂对甲醇氧化反应的电催化性质的影响与稀土离子相似。但用稀土离子的方法比较简便，因此，相比之下，用稀土离子来促进甲醇在Pt上的电催化氧化反应方法较好。3．用Eu, Gd, Dy, Ho的氧化物制得的Pt-稀土氧化物／C复合催化剂对co的电催化氧化反应的催化活性要高于Pt/C催化剂。相对于的情况，在co在Eu, Gd, Dy,Ho的氧化物的Pt／稀土氧化物／C复合催化剂电极上的循环伏安图中，CO的氧化峰峰电位比在Pt/C电极的有不同程度的负移。吸．初步确定了电极和单体电池制备的较好的工艺参数和工作条件。在发明一种薄电极制备方法，确定最佳的电极催化层配方等的基础上，制得的单体电池，在25℃工作时，输出功率密度峰值达到28 mW/cm~2。

Cr(III)盐在Pt电极和PbO_2电极上阳极氧化为络酸盐的机理的研究

关于Cr(III)阳极氧化为Cr(VI)的过程，在工业应用方面已有许多工作，但对机理尚不清楚。本文对Pt电极和PbO_2电极上的这一过程进行了动力学的研究，首次得到了Cr(VI)在这两种电极上阳极形成的真实动力学数据，并提出了与实验基本相符的反应机理。用“分解极化曲线法”和稳态极化曲线的测量，得到了[H_2SO_4]和[SO_4~=]恒定的不同浓度Cr_2(SO_4)_3溶液中Cr(VI)在光滑Pt电极上阳极形成的真实动力学数据，可用如下方程式来表达：在较低电位下φ = a + 0.25 log i_2 - 0.23 log [Cr(III)]在较高电位下φ = a' + 0.48 log i_2 - 0.44 log [Cr(III)]同时得到了氧的阳极发生的动力学数据，Tafel线性区的斜率接近于2.303 RT/ΔF (Δ ≈ 0.5)。动力学方程式的推导与实验的比较表明，在光滑Pt电极上Cr(VI)是由Cr(II)通过“活性氧”的氧化形成的，提出了如下反应机理：H_2O → (OH)_(ad) + H~+ + e~- 2(OH)_(ad) → (O)_(ad) + H_2O 2(O)_(ad) →O_2 (OH)_(ad) + [Cr(H_2O)_6]~(3+) → (CrO_2)_(ad) + 3H~+ + 5H_2O (CrO_2)_(ad) + H_2O → (CrO_3~-)_(ad) + 2H~+ + e~- (CrO_3~-)_(ad) + H_2O → HCrO_4~- + H~+ + e~- 2HCrO_4~- <-> Cr_2O_7~(2-) + H_2O 在[H_2SO_4]和[SO_4~(2-)]恒定的不同浓度Cr_2(SO_4)_3溶液中，测得了Cr(VI)在Δ-PbO_2电极上阳极形成的动力学数据：在较低电位下φ = a + 0.28 log i_2 - 0.30 log [Cr(III)]在较高电位下φ = a' + 0.55 log i_2 - 0.51 log [Cr(III)]氧的极化曲线的Tafel线性区斜率也为2.303RT/ΔF (Δ approx= 0.5)。PbO_2电极和Pt电极上分解极化曲线的比较表明，Cr(VI)在前一电极上阳极形成的过电位远低于在后一电极上，这可能是两电极上电流效率显著差别的原因。测得了PbO_2电极上不同过电位下电极反应的有效活化能，其数值均在10 Kcal mol~(-1)以上，且随着极化的增大而减小，据此在动力学处理中可以忽略扩散的作用，交流阻抗的研究进一步证实了这一点。溶液pH的增大或[H_2SO_4]的减小会降低Cr(VI)阳极形成的过电位，使反应加速。在[H_2SO_4]和[SO_4~(2-)]恒定的不同浓度Cr_2(SO_4)_3溶液中，测得了在不同电位极化下PbO_2电极的阻抗频谱。在较高电位下阻抗谱呈现明显的两个半圆，表明电极过程包括了中间吸附物的形成。求得的吸附电容Cad比双层电容Cd大1-2个数量级；Cd比通常光滑电极表面的Cd大得多，这可能与SO_4~(2-)，HCrO_4~-, Cr_2O_7~-以及[_((SO_4))~((H_2O)_2) Cr_((SO_4))~((OH)_2) Cr_((SO_4))~((OH_2)_2)]~(2-)等阳离子的特性吸附有关。从动力学的推导与实验的比较得出，在PbO_2电极上Cr(VI)也按“活性氧”机构形成，可能的机理如下：H_2O → (OH)_(ad) + H~+ + e~- (OH)_(ad) + H_2O → (O)_(ad) + H_3O~+ + e~- 2(O)_(ad) → O_2 [Cr(H_2O)_6]~(3+) + (O)_(ad) → (CrO_3~-)_(ad) + 4H~+ + 4H_2O (CrO_3~-)_(ad) + H_2O → HCrO_4~- + H~+ +e~- 2HCrO_4~- <-> Cr_2O_7~(2-) + H_2O.