Thermal annealing behaviour of Pt on n-GaN Schottky contacts
Data(s) |
2003
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Resumo |
The structural evolution and temperature dependence of the Schottky barrier heights of Pt contacts on n-GaN epilayer at various annealing temperatures were investigated extensively by Rutherford backscattering spectrometry, x-ray diffraction measurements, Auger electron spectroscopy, scanning electron microscopy and current-voltage measurements. The temperature dependence of the Schottky barrier heights may be attributed to changes of surface morphology of Pt films on the surface and variation of nonstoichiometric defects at the interface vicinity. Experimental results indicated the degradation of Pt contacts on n-GaN above 600 degreesC. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Wang J; Zhao DG; Sun YP; Duan LH; Wang YT; Zhang SM; Yang H; Zhou SQ; Wu MF .Thermal annealing behaviour of Pt on n-GaN Schottky contacts ,JOURNAL OF PHYSICS D-APPLIED PHYSICS,2003,36 (8):1018-1022 |
Palavras-Chave | #半导体物理 #BARRIER FORMATION #DIODES #PD |
Tipo |
期刊论文 |