Controlled synthesis of L-lactide-b-epsilon-caprolactone block copolymers using a rare earth complex as catalyst

Well-defined block copolymers of L-lactide-b-epsilon-caprolactone were synthesized by sequential polymerization using a rare earth complex, Y(CF3COO)(3)/Al(iso-Bu)(3), as catalyst system. The compositions of the block copolymers could be adjusted by manipulating the feeding ratio of comonomers. The characterizations by GPC, H-1 NMR, C-13 NMR, and DSC displayed that the block copolymer, poly(epsilon-caprolactone-b-L-lactide) [P(CL-b-LLA)], had a narrow molecular weight distribution and well-controlled sequences without random placement.

L-B膜

L-B膜即 Langmuir-Blodgett单分子膜,它是人为地利用分子间相互作用而建立起来的特殊分子体系。在L-B膜中分子是有序的准晶体排列,其性质有别于固体和晶体,因而有人将其称为物质的第五相。用米制备L-B膜的技术称为L-B技术。

温度敏感性PNIPAM-b-PZLL-b-mPEG三嵌段共聚物的合成与自组装研究

通过大分子引发剂引发ε-苄氧羰基-L-赖氨酸-N-羧酸酐(Lys-NCA)开环聚合和大分子缩合的方法合成了聚(N-异丙基丙烯酰胺)-b-聚(ε-苄氧羰基-L-赖氨酸)-b-聚乙二醇单甲醚三嵌段共聚物(PNIPAM-b-PZLL-b-mPEG).用GPC和1H-NMR对其结构进行了表征.用芘荧光探针法证明了该三嵌段聚合物形成胶束的性质并测定了临界胶束浓度(CMC).动态光散射(DLS)研究表明,在固定PNIPAM-b-PZLL链段长度的情况下,mPEG分子量为2000时,胶束在温度高于临界溶解温度(LCST)时发生聚集,mPEG分子量为5000时,胶束在LCST以上没有发生聚集.

超声速大攻角旋成体迎风激波数值模拟

旋成弹体在大攻角超声速流动中其迎风面上有时会出现一种迎风激波.采用非定常雷诺平均的Navier-Stokes方程以及两方程kω-sst和代数B-L湍流模型成功地模拟了该现象,验证了该迎风激波是由于流场主旋涡导致超声速流动偏移造成的涡诱导激波的一部分的结论.

三角翼受迫俯仰滚转耦合运动的气动特性研究

基于刚性动网格的技术,选用B-L湍流模型,利用有限控制体积法对N-S方程进行数值离散,对76°大后掠三角翼的受迫俯仰滚转耦合运动进行了数值模拟,在此基础上,对俯仰滚转耦合运动的气动力特性和流场结构进行了分析.计算结果表明:俯仰滚转耦合运动时,三角翼上表面的涡分布的非对称性将产生横侧方向的偏航力矩和滚转力矩,滚转力矩和偏航力矩随着滚转振幅角和滚转缩减频率的增大而增大,但对法向力影响不大.

三维直叶栅非定常流动的并行计算研究

流动分离直接关系到压气机运行的安全性与效率，对分离流动的研究是叶轮机械真实流动研究中的一个重大课题。本文针对三维压气机单转子叶片中截面所构成的三维直叶栅跨音速分离流开发了通用数值计算程序。该程序基于B-L湍流模型及高精度差分方法。多种工况的数值计算显示本程序结果与实验值吻合比较理想，验证了程序的正确性。10°攻角下分离区脉动压力的频谱与实验结果的数量级吻合，说明本程序能够较好地模拟大攻角分离流这种非定常复杂流动，为了提高计算规模及计算速度，作者对程序进行了并行化并针对微机机群系统进行了并行优化，实际计算表明本程序具有较高的并行效率。

异叶苣苔属系统学和进化研究——兼论尖舌苣苔族的系统发育

异叶苣苔属(Whytockia)隶属于苦苣苔科(Gesneriaceae)、尖舌苣苔族(Klugieae)．70年代以来，该属作为Klugieae中最原始的类群才逐渐被人们所认识，并被认为是解决Klugieae系统发育问题的关键类群，但到目前为止，对该属变异式样及系统发育的认识仍然极其有限．鉴于上述原因，本文结合蜡叶标本和大量的野外观察和采集，从形态学、维管束的结构和分化，形态发生和细胞学等方面，进行异叶苣苔属的系统学和进化研究，并兼论尖舌苣苔族的系统发育． 1．通过对异叶苣苔属大量性状的仔细观察和比较，本文选择了34个性状，并分析了他们的变异式样及其形成原因，为进一步的系统学研究提供依据． 2．地上茎的形态发生研究揭示出异叶苣苔属植物的顶芽完全受到抑制，位于小型叶腋的侧芽萌发，从而替代顶芽生长，地上茎的不分枝是位于大型叶腋的腋芽受到抑制所致，该研究纠正了前人的观察错误． 3．花序及花的形态发生过程表明，异叶苣苔属的花序呈对花从花序轴内侧二列式连续发生，没有任何分枝和附属物．花各部分的发生顺序基本上呈向心式，但在花冠和雄蕊原基之间则为离心式发生．花萼和花冠原基的发生及发育顺序均呈下降式，从而使花萼和花冠在芽中呈下降覆瓦状排列，退化雄蕊是由发育停滞所致．雌蕊的两个心皮在形态发生过程中由离生到合生，该属具中轴胎座的二室子房起源于两个离生心皮的近轴面内卷式愈合，柱头从离生到合生决定于个体发育中愈合部向上推进的程度． 4．为了澄清性状演化极性这一关键问题、本文作了花部器官解剖以及心皮维管束结构及分化过程的研究，结果表明，该属花梗和花萼中均具有分泌道和雄蕊束从中柱独立分出，同独叶苣苔属(Monophyllaea)十分相似：花盘低且薄并且没有维管束，以及子房壁维管束具有不同来源而区别于尖舌苣苔族(Klugieae)中的其它类群．异叶苣苔属的心皮结合程度和胎座形态可分为三种类型，即A型：心皮结合部的中轴区膨大，但四个瓣片的上部分离、B型：除中轴区膨大外，四个瓣片也成对愈合，胎座呈锚形、C型：中轴区不膨大，四个瓣片完全分离，子房上部一室．前者保留了较多的叶性，可能是该属乃至尖舌苣苔族中最原始心皮及胎座形态．后二者代表着两个相反的演化趋势． 5．本文首次报道了异叶苣苔属的染色体数目和核型，染色体数目均为2n＝18，x＝9．核型分别是2A或3A．核型的演化趋势，即从对称到不对称和随体的丢失同外部形态的变异密切相关。 6．深入地比较和分析了异叶苣苔属和其他类群的关系以及性状的演化趋势，并运用分支分析方法，重建属的系统发育． 7．生态、地理分布和演化的研究表明：异叶苣苔属的多样化中心分别是云南东南部和滇、贵、川交界区域，起源于第三纪或更早期的古热带湿润性森林植物区系，起源地可能是两个现代多样化中心所连接的整个区域，即：滇东南至滇贵川交界区域． 8．本文对异叶苣苔属进行全面的分类学修订，包括7个种，其中一个新种，新组合1个种和一个变种、根据该属的系统发育式样，在属下新设两个组．系统排列如下： 异叶苣苔属Whytockia W. W. Smith 组1：异叶苣苔组Sect. Whytockia Y. Z. Wang sect. nov. 1．河口异叶苣苔W. hekouensis Y. Z. Wang 2．毕节异叶苣苔W. bijieensis Y. Z. Wang, sp. nov. 3．异叶苣苔W. chiritiflora (Oliv.) W.W. Smith 4．峨眉异叶苣苔W. wilsonii (A. Weber) Y. Z. Wang, stat. nov. 5．紫红异叶苣苔W. purpurascens Y. Z. Wang 组2：台湾异叶苣苔组Sect. Synstigma Y. Z. Wang, sect. nov. 6．白花异叶苣苔W. tsiangiana (Hand.-Mazz) A. Weber 7．台湾异叶苣苔W. sasakii (Hayata)B．L．Burtt. 9．在异叶苣苔属系统学和进化研究的基础上，结合前人工作，本文进一步探讨尖舌苣苔族的系统发育．大量的证据充分显示出异叶苣苔属和圆果苣苔属分别是Klugieae最原始的类群，该族中的尖舌苣苔属(Rhynchoglossum)，盾座苣苔属(Epithema)和独叶苣苔属(Mono phyllaea)，可能是从Whytockia植物的早期类群直接演化而来，十字苣苔属(Stauranthera)和Loxonia也可能直接或间接来自Gyrogyne植物的早期类群．尖舌苣苔族植物可能起源于亚洲大陆或更准确地说，中国西南部地区，在随后的演化过程中，经过分化、迁移，逐渐形成广布于南亚、东南亚及太平洋岛屿至西非、中美洲的现代地理分布式样。

武汉东湖星形柄裸藻种群与宿主的关系以及生态因子对它的影响

星形柄裸藻与附生宿主之间的相互作用为:它是偏利者,而对宿主无很大影响;当其在宿主体表大量附着时,才对宿主有偏害作用。它的种群密度(N,个/L)与宿主密度(N_a,个/L)有密切的正相关关系:N=0.0858e~(0.0528N_a)(r=0921,p<0.01)。宿主的蜕皮间隔时间(T,天)对星形柄裸藻的平均附着量(m,个/每个甲壳动物)和附着量(B,个/L)的影响是:在一定的蜕皮间隔时间范围内呈正相关性:m=ae~(bT)和B=ae~(bT)(a和b为方程常数,下同);超过这个范围呈负相关性:m=aT~

Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition

ZnO thin films were deposited on glass substrates at room temperature (RT) similar to 500 degrees C by pulsed laser deposition (PLD) technique and then were annealed at 150-450 degrees C in air. The effects of annealing temperature on the microstructure and optical properties of the thin films deposited at each substrate temperature were investigated by XRD, SEM, transmittance spectra, and photoluminescence (PL). The results showed that the c-axis orientation of ZnO thin films was not destroyed by annealing treatments: the grain size increased and stress relaxed for the films deposited at 200-500 degrees C, and thin films densified for the films deposited at RT with increasing annealing temperature. The transmittance spectra indicated that E-g of thin films showed a decreased trend with annealing temperature. From the PL measurements, there was a general trend, that is UV emission enhanced with lower annealing temperature and disappeared at higher annealing temperature for the films deposited at 200-500 degrees C; no UV emission was observed for the films deposited at RT regardless of annealing treatment. Improvement of grain size and stoichiometric ratio with annealing temperature can be attributed to the enhancement of UV emission, but the adsorbed oxygen species on the surface and grain boundary of films are thought to contribute the annihilation of UV emission. It seems that annealing at lower temperature in air is an effective method to improve the UV emission for thin films deposited on glass substrate at substrate temperature above RT.

Domain wall resistance in perpendicular (Ga,Mn) As: Dependence on pinning

We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. However, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines in unetched material. This indicates that the spin transport across a domain wall is strongly influenced by the nature of the pinning.

Effect of Copassivation of Cl and Cu on CdTe Grain Boundaries

Using a first-principles method, we investigate the structural and electronic properties of grain boundaries (GBs) in polycrystalline CdTe and the effects of copassivation of elements with far distinct electronegativities. Of the two types of GBs studied in this Letter, we find that the Cd core is less harmful to the carrier transport, but is difficult to passivate with impurities such as Cl and Cu, whereas the Te core creates a high defect density below the conduction band minimum, but all these levels can be removed by copassivation of Cl and Cu. Our analysis indicates that for most polycrystalline systems copassivation or multipassivation is required to passivate the GBs.

The effects of substrate temperature on the structure and properties of ZnO films prepared by pulsed laser deposition

ZnO thin films were prepared by pulsed laser deposition (PLD) on glass substrates with growth temperature from room temperature (RT) to 500 degrees C. The effects of substrate temperature on the structural and optical properties of ZnO films have been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission spectra, and RT photoluminescence (PL) measurements. The results showed that crystalline and (0 0 2)-oriented ZnO films were obtained at all substrate temperatures. As the substrate temperature increased from RT to 500 degrees C, the ratio of grain size in height direction to that in the lateral direction gradually decreased. The same grain size in two directions was obtained at 200 degrees C, and the size was smallest in all samples, which may result in maximum E, and E-0 of the films. UV emission was observed only in the films grown at 200 degrees C, which is probably because the stoichiometry of ZnO films was improved at a suitable substrate temperature. It was suggested that the UV emission might be related to the stoichiometry in the ZnO film rather than the grain size of the thin film. (c) 2007 Elsevier Ltd. All rights reserved.

Structural and optical properties of ZnO thin films on glass substrate grown by laser-ablating Zn target in oxygen atmosphere

C-axis-orientated ZnO thin films were prepared on glass substrates by pulsed-laser deposition (PLD) technique in an oxygen-reactive atmosphere, using a metallic Zn target. The effects of growth condition such as laser energy and substrate temperature on the structural and optical properties of ZnO films had been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission spectra and room-temperature (RT) photoluminescence (PL) measurements. The results showed that the thickness, crystallite size, and compactness of ZnO films increased with the laser energy and substrate temperature. Both the absorption edges and the UV emission peaks of the films exhibited redshift, and UV emission intensity gradually increased as the laser energy and substrate temperature increased. From these results, it was concluded that crystalline quality of ZnO films was improved with increasing laser energy and substrate temperature. (c) 2007 Elsevier B.N. All rights reserved.

Growth behavior of AlInGaN films

The structural and surface properties of AlInGaN quaternary films grown at different temperatures on GaN templates by metalorganic chemical vapor deposition are investigated. Formation of two quaternary layers is confirmed and the difference between them is pronounced when the growth temperature is increased. The surface is featured with V-shaped pits and cracks, whose characteristics are further found to be strongly dependent on the growth temperature of AlInGaN layers. The two-layer structure is interpreted by taking into account of the strain status in AlInGaN layers. (C) 2008 Elsevier B.V. All rights reserved.

液晶聚芳醚酮/聚芳醚酮共混体系的相行为、凝聚态结构与流变性能研究

聚芳醚酮是一种高性能热塑性材料，但其熔融温度高，熔体粘度大，流动性较差。液晶聚芳醚酮则具有非常丰富的液晶相织构和复杂的相转变行为，并且其熔体粘度低，流动性较好。将二者共混，液晶的加入势必降低聚芳醚酮的熔融粘度，改善其熔体流动性，另一方面液晶聚芳醚酮的液晶织构和相行为等势必受很大影响。因此开展这一研究工作不但有重要的理论意义，同时对改善这类材料的性能和拓宽其应用范围具有重要的实际意义。发现液晶聚芳醚酮／聚醚醚酮共混物的复杂相行为与组成密切相关。在以液晶聚芳醚酮为主的共混物中，高分子量的聚醚醚酮易于从低分子量的液晶聚芳醚酮基质相中分离出来，形成了特殊的环带结构。在50：50液晶聚芳醚酮／聚醚醚酮共混物中，两个组分在熔融状态下发生了液一液相分离，导致环带结构和聚醚醚酮球晶同时形成。在以聚醚醚酮为基质相的共混物中，低分子量的液晶聚芳醚酮很难从高分子量的聚醚醚酮基质相中分离出来，最后只能在聚醚醚酮球晶的边界形成单独的相区。当聚醚醚酮含量很高时，仅生成聚醚醚酮球晶。首次在液晶聚芳醚酮与聚醚醚酮共混物中发现了环带球晶，并利用溶剂选择性蚀刻的方法确定了其相结构和组成。环带球晶中的亮心和亮环是液晶聚芳醚酮相，其c轴（分子链方向）垂直于膜平面，而。和b轴则在膜平面内没有固定的取向。暗环则是聚醚醚酮与部分液晶聚芳醚酮的共存相，其中液晶聚芳醚酮晶体的分子链也垂直于膜平面，但聚醚醚酮片晶则呈现复杂的结晶取向。确定环带球晶的形成机理，从分子水平上提出环带球晶的生长模型，即间歇式增长过程，符合结构不连续模型。总结了环带球晶的形成规律和必要条件为：（l）液晶聚芳醚酮为主要成分；（2）液晶聚芳醚酮与聚醚醚酮有一定相容性，至少在熔融态分子相容；（3）液晶聚芳醚酮的各向同性相向液晶相的转变温度要高于聚芳醚酮的结晶温度；（4）液晶聚芳醚酮相转变（或结晶）速率与共混物的相分离速率相匹配或前者略大于后者；（5）降温速率或等温结晶温度适当。聚醚醚酮／含氟液晶聚芳醚酮共混物在熔体状态下的流动行为与共混物的组成、两相的相容性及相的转变有着密切的关系。在聚醚醚酮／含氟液晶聚芳醚酮共混物中，当前者为主要成份时，流动曲线形状与纯PEEK的相似，而当后者为主要成份时，表现出与含氟液晶聚芳醚酮相似的流变行为。共混物的复数粘度、储存模量和损失模量总体来说随F一队EK含量的增加而逐渐下降，只有当含氟液晶聚芳醚酮含量为50％时，共混物的复数粘度、储存模量和损失模量出现了局部极大值。