2.1GeV Kr离子在聚碳酸酯膜中引起的辐照效应研究

用傅立叶变换红外光 (FTIR)谱仪和紫外 /可见光 (UV/VIS)谱仪研究了2 1GeVKr离子在聚碳酸酯 (PC)膜中产生的效应 .研究结果表明 ,在高能Kr离子辐照下 ,PC膜中发生了断键、断链和键的重组 ,炔基的出现是键的断裂和重组的结果 .这些效应与辐照剂量和电子能损有关 .辐照也使PC膜中发生了从氢化非晶态碳向非晶态碳的转变 ,在UV/VIS中 ,波长为 3 80 ,4 50和 50 0nm处的相对吸光度随能量沉积密度的增加近似按线性变化

单电离态Kr原子强跃迁能级振子强度的研究

阐述了用束 箔方法通过测量单电离态Kr原子强跃迁谱线的能级寿命来确定振子强度f 值的方法 ,并对确定出的强跃迁谱线的能级吸收振子强度进行简要讨论。

单电离态Kr原子的能级寿命的研究

在 12 0keV的能量下 ,用束 -箔方法研究了跃迁强谱线的单电离态Kr原子激发态能级5p4 D07/2 ,5p4 D05/2 的寿命。并与理论和其它实验结果做了比较和讨论。

Projectile fragmentation of Kr-86 at 64 MeV/nucleon

We measured fragmentation cross sections produced using the primary beam of Kr-86 at 64 MeV/nucleon on Be-9 and Ta-181 targets. The cross sections were obtained by integrating the momentum distributions of isotopes with 25 <= Z <= 36 measured using the RIPS fragment separator at RIKEN. The cross-section ratios obtained with the Ta-181 and Be-9 targets depend on the fragment masses, contrary to the simple geometrical models. We compared the extracted cross sections to EPAX; an empirical parametrization of fragmentation cross sections. Predictions from current EPAX parametrization severely overestimate the production cross sections of very neutron-rich isotopes. Attempts to obtain another set of EPAX parameters specific to the reaction studied here to extrapolate the neutron-rich nuclei more accurately have not been very successful, suggesting that accurate predictions of production cross sections of nuclei far from the valley of stability require information of nuclear properties that are not present in EPAX.

25MeV/u Kr辐照下PET薄膜的损伤机制研究；Damage Mechanism of PET Irradiated by 25 MeV/u Kr Ions

通过25MeV/u86Kr离子辐照叠层结晶聚对苯二甲酸乙二醇酯膜(PET),在不同的电子能损(3.407.25keV/nm)和离子注量(5×10113×1012ions/cm2)辐照条件下,对Kr离子在PET中引起的辐照损伤效应进行了研究。借助傅里叶变换红外光谱分析,通过对样品的红外吸收峰进行扣除基底后的Lorentz拟合,分析了与主要官能团对应的吸收峰强度的变化趋势,研究了化学结构与组分在重离子辐照下的变化规律;利用X射线衍射光谱仪测量,研究了Kr离子在PET潜径迹中引起的非晶化过程,并通过对吸光度和非晶化强度随离子注量的指数衰减规律的分析,获得了不同电子能损离子辐照PET时主要官能团的损伤截面和非晶化截面及对应的潜径迹半径。

Structural stability of C-60 films under the bombardment of 1.95 GeV Kr ions

The structural stability of C-60 films under the bombardment of 1.95 GeV Kr ions is investigated. The irradiated C-60 films were analyzed by Fourier Transform Infrared (FTIR) spectroscopy and Raman scattering technique. The analytical results indicate that the irradiation induced a decrease of icosahedral symmetry of C-60 molecule and damage of C-60 films; different vibration modes of C-60 molecule have different irradiation sensitivities; the mean efficient damage radius obtained from experimental data is about 1.47 nm, which is in good agreement with thermal spike model prediction.

高能kr离子辐照聚合物膜的潜径迹及其辐照降解特性的研究

本文简要叙述了快重离子在固体材料，特别是聚合物材料中引起的强电子激发效应研究的基本理论、发展历史和研究现状。描述了在兰州重离子加速器上完成的25 MeV/u 86Kr离子辐照叠层聚对苯二甲酸乙二醇酯膜（PET）和聚碳酸酯（PC）膜的实验及结果分析。应用傅立叶红外变换光谱（FT-IR）及X-射线衍射分析（XRD）方法研究了在不同电子能损及不同注量辐照条件下，高能Kr离子在聚合物PET和PC潜径迹中引起的的损伤效应。结果表明：高能Kr离子在聚合物PET、PC膜引起的损伤主要是由于辐照引起的断键及键的重组产生的官能团的降解及非晶化过程，损伤截面存在电子能损阈值，且与官能团的结构有关。 对PET的傅立叶红外变换光谱分析结果给出，电子能损为7.25 keV/nm时，对应官能团吸收峰794 cm-1, 849 cm-1, 1021 cm-1, 1341 cm-1, 1410 cm-1, 1505 cm-1,的损伤截面半径分别为：3.63 nm, 4.70 nm, 4.58 nm, 3.54 nm, 5.17 nm, 5.32 nm。X-射线衍射分析结果表明，PET的非晶化转变截面随离子注量和电子能损的增大而增加，（100）衍射峰的相对强度I/I0随离子注量的增加而指数衰减，对应电子能损为6.62, 6.93, 7.25 keV/nm，其相应的非晶化半径分别为4.86, 5.64, 6.77 nm。 对PC的傅立叶红外变换光谱分析表明，当电子能损比较小，大多数官能团的红外吸收无明显变化，直到当辐照注量为2×1012 ions/cm2 且电子能损比较大时，其绝对吸收强度才发生明显的改变。电子能损为6.37 keV/nm 时，对应官能团吸收峰为519 cm-1, 605 cm-1, 724 cm-1, 1014 cm-1，其损伤截面分别为：13.12, 45.40, 50.21, 56.28 nm2

有限厚星系盘内域的泊松方程近似解析解

<正> 在星系密度波的渐近理论中,泊松方程的近似解析解有着十分重要的意义.对于无限薄盘,徐遐生、Bertin等以旋臂倾角参数i_0=m/kr为小参数先后求得相应泊松方程的一、二级渐近解,这些解可以很好地用于比较紧卷的螺旋结构,在平面盘密度波理论中起过重要作用;对于有限厚盘,彭秋和等人也曾得到相应泊松方程的一种解,不过此解需假定物质密度

有初挠度简支矩形板的后屈曲特性

应用von-Kaman大挠度薄板方程，对承受单向面内压力，四边简支的有初挠度矩形板进行后 屈曲特性分析（其中挠曲函数取为双傅氏级数展开式的前三项）。首先对边长比小于等于2~{1/2}的板进行分析（初挠度根据已有 的大量实测结果取为双傅氏级数的一项）。将有关变量化为无量纲量，以无量纲载荷作为小参数，用参数摄动法求解非线性代数方程组，得到受压边最大应力与平均压应力之间、平均压应力与平均应变之间的显式函数式。分析了不同边长比和初挠度对矩形板后屈曲特性的影响，结果表明初挠度的存在会明显降低板的面内刚度。继而将这些结论推广应用到边长比大于2~{1/2}的情况。

高等断裂力学

《高等断裂力学》系统论述断裂力学的基本概念、理论基础、力学原理、分析方法以及断裂力学的实验测定和工程应用。深入阐明了断裂力学各个重要发展阶段的新颖学术思想和原创性工作，同时融会贯通地介绍了国内学者在作者熟悉的若干领域内的创造性贡献。　　《高等断裂力学》共14章。第1章介绍断裂力学的历史背景和发展脉络；第2～5章介绍线弹性断裂力学；第6～8章论述弹塑性断裂力学；第9及第10章分别介绍疲劳裂纹扩展和界面裂纹；第11～14章阐述裂纹体弹性动力学和裂纹动态扩展。　　《高等断裂力学》适合从事断裂力学研究和应用的科技工作者及工程师使用和参考，也可供力学专业的高年级本科生和研究生阅读参考.

线偏振双色激光场中氪原子的阈上电离现象

采用基于Guo,Aberg和Crasemann发展的强激光场中的非微扰量子散射理论(GAC理论),研究了线偏振双色激光场中氪(Kr)原子阈上电离的光电子角分布,双色激光场由一系列相同的单周期激光脉冲组成.研究发现光电子角分布有强烈的位相依赖关系,且呈现出反演不对称性、喷射结构和展宽结构等现象.这为实验上通过改变双色激光场的相对相位来观察和控制光电子角分布提供了一种有效的方法.

Identification of a Giardia krr1 homolog gene and the secondarily anucleolate condition of Giaridia lamblia

Giaridia lamblia was long considered to be one of the most primitive eukaryotes and to lie close to the transition between prokaryotes and eukaryotes, but several supporting features, such as lack of mitochondrion and Golgi, have been challenged recently. It was also reported previously that G. lamblia lacked nucleolus, which is the site of pre-rRNA processing and ribosomal assembling in the other eukaryotic cells. Here, we report the identification of the yeast homolog gene, krr1, in the anucleolate eukaryote, G. lamblia. The krr1 gene, encoding one of the pre-rRNA processing proteins in yeast, is actively transcribed in G. lamblia. The deduced protein sequence of G. lamblia krr1 is highly similar to yeast KRR1p that contains a single-KH domain. Our database searches indicated that krr1 genes actually present in diverse eukaryotes and also seem to present in Archaea. However, only the eukaryotic homologs, including that of G. lamblia, have the single-KH domain, which contains the conserved motif KR(K)R. Fibrillarin, another important pre-rRNA processing protein has also been identified previously in G. lamblia. Moreover, our database search shows that nearly half of the other nucleolus-localized protein genes of eukaryotic cells also have their homologs in Giardia. Therefore, we suggest that a common mechanism of pre-RNA processing may operate in the anucleolate eukaryote G. lamblia and in the other eukaryotes and that like the case of "lack of mitochondrion," "lack of nucleolus" may not be a primitive feature, but a secondarily evolutionary condition of the parasite.

ZnO thin film photoconductive ultraviolet detector with fast photoresponse

C-axis preferred oriented ZnO thin films were prepared on quartz substrates by RF sputtering. Photoconductive ultraviolet detector with planar interdigital electrodes was fabricated on ZnO thin film by the lift off technique. Linear I-V characteristic was observed under dark or 365 nm UV light illumination and has obvious difference. The photoresponsivity of 365 nm at 5 V bias is 18 A/W. The response time measure set mainly contains KrF excimer laser with the pulse width of 30 ns and the oscillograph with the bandwidth of 200 MHz. The result shows fast photoresponse with a rise time of 100 ns and fall time of 1.5 mu s. (c) 2005 Elsevier B.V. All rights reserved.