Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods

Nanostructured hexagonal InN overlayers were heteroepitaxially deposited on vertically oriented c-axis GaN nanorods by metal-organic chemical vapor deposition. InN overlayers grown in radial directions are featured by a nonpolar heteroepitaxial growth mode on GaN nanorods, showing a great difference from the conventional InN growth on (0001) c-plane GaN template. The surface of InN overlayers is mainly composed of several specific facets with lower crystallographic indices. The orientation relationship between InN and GaN lattices is found to be [0001](InN) parallel to [0001](GaN) and [1100](InN)parallel to[1100](GaN). A strong photoluminescence of InN nanostructures is observed. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3177347]

High-precision determination of lattice constants and structural characterization of InN thin films

X-ray diffraction and Rutherford backscattering/channeling were used to characterize the crystalline quality of an InN layer grown on Al2O3(0001) Using metal-organic chemical-vapor deposition. A full width at half maximum of 0.27 degrees from an InN(0002) omega scan and a minimum yield of 23% from channeling measurements show that this 480-nm-thick InN layer grown at low temperature (450 degrees C) has a relatively good crystalline quality. High-resolution x-ray diffraction indicates that the InN layer contains a small fraction of cubic InN, besides the predominant hexagonal phase. From this InN sample, the lattice constants a=0.353 76 nm and c=0.570 64 nm for the hexagonal InN and a=0.4986 nm for the cubic InN were determined independently. 2 theta/omega-chi mapping and a pole figure measurement revealed that the crystallographic relationship among the cubic InN, the hexagonal InN, and the substrate is: InN[111]parallel to InN[0001]parallel to Al2O3[0001] and InN{110}parallel to InN{1120}parallel to Al2O3{1010}, and that the cubic InN is twinned. Photoluminescence measurements indicate that the band-gap energy of this sample is approximately 0.82 eV. (c) 2006 American Vacuum Society.

Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition

This paper presents a study on the nucleation and initial growth kinetics of InN on GaN, especially their dependence on metalorganic chemical vapour deposition conditions. It is found that the density and size of separated InN nano-scale islands can be adjusted and well controlled by changing the V/III ratio and growth temperature. InN nuclei density increases for several orders of magnitude with decreasing growth temperature between 525 and 375 degrees C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters less than 100 nm, whereas at elevated temperatures the InN islands grow larger and become well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. The temperature dependence of InN island density gives two activation energies of InN nucleation behaviour, which is attributed to two different kinetic processes related to In adatom surface diffusion and desorption, respectively.

The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD

The effects of growth temperature and V/III ratio on the InN initial nucleation of islands on the GaN (0 0 0 1) surface were investigated. It is found that InN nuclei density increases with decreasing growth temperature between 375 and 525 degrees C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters of less than 100 nm, whereas at elevated temperatures the InN islands can grow larger and well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. At a given growth temperature of 500 degrees C, a controllable density and size of separated InN islands can be achieved by adjusting the V/III ratio. The larger islands lead to fewer defects when they are coalesced. Comparatively, the electrical properties of the films grown under higher V/III ratio are improved.

Growth of ZnO Nanotetrapods with Hexagonal Crown

ZnO nanotetrapods with hexagonal crown were synthesized on a silicon wafer by vapor transport process at a low temperature of 630 °C and normal pressure without the presence of catalysts. The results demonstrated that the as-synthesized products with slender legs and regular hexagonal crown are single crystal with wurtzite structure and preferentially grow up along 001 direction. Photoluminescence spectra revealed that the green emission originated from oxygen vacancies overwhelmed that of the near-band-edge ultraviolet peak, which suggests the peculiar-shaped nanotetrapods may have potential applications in multichannel nano-optoelectronic devices.

Generation of near-field hexagonal array illumination with a phase grating

A hexagonal array not only is a nature-preferred pattern but also is widely used in optoelectronical materials and devices. We report a simple method of hexagonal array illumination based on the Talbot effect that has a theoretical efficiency of 100%. An experimental efficiency of 90.6% with a binary phase (0, pi) hexagonal grating is given. This method should be highly interesting for applications of hexagonal array illumination in optical devices as well as in other hexagonal cells. (C) 2002 Optical Society of America.

Near-field hexagonal array illumination based on fractional Talbot effect

Hexagonal array is a basic structure widely exists in nature and adopted by optoclectronic device. A phase plate based on the fractional Talbot effect that converts a single expanded laser beam into a regular hexagonal array of uniformly illuminated apertures with virtually 100% efficiency is presented. The uniform hexagonal array illumination with a fill factor of 1/12 is demonstrated by the computer simulation. (C) 2006 Elsevier GmbH. All rights reserved.

InN 薄膜的MOCVD 生长及性质研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

InN材料的RF-MBE生长及其禁带宽度研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

InN薄膜的三维生长及其对材料性质的影响

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

InN 薄膜与纳米结构的生长及其物性研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD

InN nanostructures with and without GaN capping layers were grown by using metal-organic chemical vapor deposition. Morphological, structural, and optical properties were systematically studied by using atomic force microscopy, X-ray diffraction (XRD) and temperature-dependent photoluminescence (PL). XRD results show that an InGaN structure is formed for the sample with a GaN capping layer, which will reduce the quality and the IR PL emission of the InN. The lower emission peak at similar to 0.7 eV was theoretically fitted and assigned as the band edge emission of InN. Temperature-dependent PL shows a good quantum efficiency for the sample without a GaN capping layers; this corresponds to a lower density of dislocations and a small activation energy.

一种高质量InN薄膜的获取方法

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Growth temperature dependences of InN films grown by MOCVD

We investigate the growth temperature dependences of InN films grown by metal organic chemical vapor deposition (MOCVD). Experimental results indicate that growth temperature has a strong effect on the surface morphology, crystalline quality and electrical properties of the InN layer. The increasing growth temperature broadened the v scan's full-width at half-maximum (FWHM) and roughened the surface morphology; whereas the electrical properties improved: As the temperature increased from 460 degrees C to 560 degrees C, room-temperature Hall mobility increased from 98 cm(2)/V s to nearly 800 cm(2)/V s and carrier concentration dropped from 5.29 x 10(19) cm (3) to 0.93 x 10(19) cm (3). The higher growth temperature resulted in more efficient cracking of NH3, which improved Hall mobility and decreased carrier concentration. (C) 2008 Elsevier B.V. All rights reserved.

Characterization of ZnMgO hexagonal-nanotowers/films on m-plane sapphire synthesized by metal organic chemical vapour deposition

ZnMgO hexagonal-nanotowers/films grown on m-plane sapphire substrates were successfully synthesized using a vertical low-pressure metal organic chemical vapour deposition system. The structural and optical properties of the as-obtained products were characterized using various techniques. They were grown along the non-polar [1 0 (1) over bar 0] direction and possessed wurtzite structure. The ZnMgO hexagonal-nanotowers were about 200 nm in diameter at the bottom and 120 nm in length. Photoluminescence and Raman spectra show that the products have good crystal quality with few oxygen vacancies. With Mg incorporation, multiple-phonon scattering becomes weak and broad, and the intensities of all observed vibrational modes decrease. The ultraviolet near band edge emission shows a clear blueshift (as much as 100 meV) and broadening compared with that of pure ZnO products.