InN 薄膜的MOCVD 生长及性质研究


Autoria(s): 黄勇
Contribuinte(s)

杨辉

Data(s)

2005

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Made available in DSpace on 2009-04-13T11:45:31Z (GMT).

Made available in DSpace on 2009-07-09T01:36:16Z (GMT). No. of bitstreams: 1 disk/eh2005/hy.pdf: 4552527 bytes, checksum: 2ff20b62513b1e044e3ce923fd35daf5 (MD5) Previous issue date: 2005

Identificador

http://ir.semi.ac.cn/handle/172111/5477

http://www.irgrid.ac.cn/handle/1471x/60300

Idioma(s)

中文

Fonte

黄勇.InN 薄膜的MOCVD 生长及性质研究.[硕士].北京.中国科学院半导体研究所.2005

Palavras-Chave #微电子学与固体电子学
Tipo

学位论文