InP Based PD/EAM Integrated Photonic Switch

A new compact three-port InP based PD/EAM (photo-detector/electro-absorption modulator) integrated photonic switch is reported. The device demonstrates bi-directional wavelength conversion over 20 nm at 2.5 Gbit/s with a low input optical power of about 20 mW.

Size-Dependent Elastic Properties Of Ni Nanofilms By Molecular Dynamics Simulation

Size-dependent elastic properties of Ni nanofilms are investigated by molecular dynamics ( MD) simulations with embedded atom method (EAM). The surface effects are considered by calculating the surface relaxation, surface energy, and surface stress. The Young's modulus and yield stress are obtained as functions of thickness and crystallographic orientation. It is shown that the surface relaxation has important effects on the the elastic properties at nanoscale. When the surface relaxation is outward, the Young's modulus decreases with the film thickness decreasing, and vice versa. The results also show that the yield stresses of the films increase with the films becoming thinner. With the thickness of the nanofilms decreasing, the surface effects on the elastic properties become dominant.

温度和加载速率对位错发射影响的原子级模拟

以Al作为研究对象，采用EAM势实施分子动力学模拟。在Ⅰ型和Ⅱ型加载条件下，研究了温度和取向对位错发射、裂纹脆性及韧性扩展的影响。模拟结果表明，升高温度，发射位错的临界应力强度因子按指数规律降低。加载速率在一定范围内将影响临界应力强度因子。临界应力强度因子随着加载速率的增大而增大。

A new N-body potential and its application

Based on the embedded atom method (EAM) proposed by Daw and Baskes and Johnson's model, this paper constructs a new N-body potential for bcc crystal Mo. The procedure of constructing the new N-body potential can be applied to other metals. The dislocation emission from a crack tip has been simulated successfully using molecular dynamics method, the result is in good agreement with the elastic solution.

Molecular dynamics studies on the dislocation gliding near a tilt boundary

The gliding behavior of edge dislocation near a grain boundary(QB) in copper under pure shear stresses is simulated by using molecular dynamics(MD) method. Many-body potential incorporating the embedded atom method (EAM) is used. The critical shear stresses for a single disocation to pass across GB surface are obtained at values of sigma(c)=23MPa similar to 68 MPa and 137 MPa similar to 274 MPa for Sigma=165 small angle tilt GB at 300 K and 20 K, respectively. The first result agrees with the experimental yield stress sigma(y)(=42 MPa) quite well. It suggests that there might be one of the reasons of initial plastic yielding caused by single dislocation gliding across GB. In addition, there might be possibility to obtain yield strength from microscopic analysis. Moreover, the experimental value of sigma(y) at low temperature is generally higher than that at room temperature. So, these results are in conformity qualitatively with experimental fact. On the other hand, the Sigma=25 GB is too strong an obstacle to the dislocation. In this case, a dislocation is able to pass across GB under relatively low stress only when it is driven by other dislocations. This is taken to mean that dislocation pile-up must be built up in front of this kind of GB, if this GB may take effect on the process of plastic deformation.

Size-dependent elastic properties of Ni nanofilms by molecular dynamics simulation

Size-dependent elastic properties of Ni nanofilms are investigated by molecular dynamics ( MD) simulations with embedded atom method (EAM). The surface effects are considered by calculating the surface relaxation, surface energy, and surface stress. The Young's modulus and yield stress are obtained as functions of thickness and crystallographic orientation. It is shown that the surface relaxation has important effects on the the elastic properties at nanoscale. When the surface relaxation is outward, the Young's modulus decreases with the film thickness decreasing, and vice versa. The results also show that the yield stresses of the films increase with the films becoming thinner. With the thickness of the nanofilms decreasing, the surface effects on the elastic properties become dominant.

Monolithic integration of sampled grating DBR with electroabsorption modulator by combining selective-area-growth MOCVD and quantum-well intermixing

We present the monolithic integration of a sampled-grating distributed Bragg reflector (SC-DBR) laser with a quantum-well electroabsorption modulator (QW-EAM) by combining ultra-low-pressure (55 mbar) selective-area-growth (SAG) metal-organic chemical vapour deposition (MOCVD) and quantum-well intermixing (QWI) for the first time. The QW-EAM and the gain section can be grown simultaneously by using SAG MOCVD technology. Meanwhile, the QWI technology offers an abrupt band-gap change between two functional sections, which reduces internal absorption loss. The experimental results show that the threshold current I-th = 62 mA, and output power reaches 3.6 mW. The wavelength tuning range covers 30 nm, and all the corresponding side mode suppression ratios are over 30 dB. The extinction ratios at available wavelength channels can reach more than 14 dB with bias of -5 V.

A novel butt-joint scheme for the preparation of electro-absorptive lasers

A 1.55 mu m InGaAsP/InGaAsP multiple-quantum-well electro-absorption modulator (EAM) monolithically integrated with a distributed feedback laser (DFB) diode has been realized based on a novel butt-joint scheme by ultra-low metal-organic vapour phase epitaxy for the first time. The threshold current of 25 mA and an extinction ratio of more than 30 dB are obtained by using the novel structure. The beam divergence angles at the horizontal and vertical directions are as small as 19.3 degrees x 13 degrees, respectively, without a spot-size converter by undercutting the InGaAsP active region. The capacitance of the ridge waveguide device with a deep mesa buried by polyimide was reduced down to 0.30 pF.

40-Gb/s Low Chirp Electroabsorption Modulator Integrated With DFB Laser

A 40-Gb/s monolithically integrated transmitter containing an InGaAsP multiple-quantum-well electroabsorption modulator (EAM) with lumped electrode and a distributed-feedback semiconductor laser is demonstrated. Superior characteristics are exhibited for the device, such as low threshold current of 20 mA, over 40-dB sidemode suppression ratio at 1550 nm, and more than 30-dB dc extinction ratio when coupled into a single-mode fiber. By adopting a deep ridge waveguide and planar electrode structures combined with buried benzocyclobutene, the capacitance of the EAM is reduced to 0.18 pF and the small-signal modulation bandwidth exceeds 33 GHz. Negative chirp operation is also realized when the bias voltage is beyond 1.6 V.

Dynamic P-I and P-V Curves for Semiconductor Lasers and Modulators

In this paper, we propose the dynamic P-V curve for modulator and P-I curve for laser diode, and present a simple approach to deriving the curves from the small-signal frequency responses measured using a microwave network analyzer. The linear response range, modulation efficiency, optimal driving conditions at different frequency can, therefore, be determined. It is demonstrated that the large-signal performance of electro-absorption (EA) modulator and the directly modulated semiconductor lasers can be predicted from the dynamic curved surface. Experiments show a good agreement between the evaluated characteristics and the measured large-signal performance.

Microwave generation in an electro-absorption modulator integrated with a DFB laser subject to optical injection

This paper presents a new technique to generate microwave signal using an electro-absorption modulator (EAM) integrated with a distributed feedback (DFB) laser subject to optical injection. Experiments show that the frequency of the generated microwave can be tuned by changing the wavelength of the external laser or adjusting the bias voltage of the EAM. The frequency response of the EAM is studied and found to be unsmooth due to packaging parasitic effects and four-wave mixing effect occurring in the active layer of the DFB laser. It is also demonstrated that an EA modulator integrated in between two DFB lasers can be used instead of the EML under optical injection. This integrated chip can be used to realize a monolithically integrated tunable microwave source. (C) 2009 Optical Society of America

Monolithically integrated semiconductor optical amplifier and electroabsorption modulator with dual-waveguide spot-size converter input and output

We have demonstrated an electroabsorption modulator and semiconductor optical amplifier monolithically integrated with novel dual-waveguide spot-size converters (SSC) at the input and output ports for low-loss coupling to a planar light-guide circuit silica waveguide or cleaved single-mode optical fibre. The device was fabricated by means of selective-area MOVPE growth, quantum well intermixing and asymmetric twin waveguide technologies with only a three-step low-pressure MOVPE growth. For the device structure, in the SOA/EAM section, a double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge structure (BRS) was incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of easy processing of the ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB dc and more than 10 GHz 3 dB bandwidth is successfully achieved, The beam divergence angles of the input and output ports of the device are as small as 8.0 degrees x 12.6 degrees, resulting in 3.0 dB coupling loss with a cleaved single-mode optical fibre.

Monolithic integration of an InGaAsP-InP strained DFB laser and an electroabsorption modulator by ultra-low-pressure selective-area-growth MOCVD

The design and basic characteristics of a strained InGaAsP-InP multiple-quantum-well (MQW) DFB laser monolithically integrated with an electroabsorption modulator (EAM) by ultra-low-pressure (22 mbar) selective-area-growth (SAG) MOCVD are presented. A fundamental study of the controllability and the applicability of band-gap energy by using the SAG, method is performed. A large band-gap photoluminescence wavelength shift of 88 mn. was obtained with a small mask width variation (0-30 mu m). The technique is then applied to fabricate a high performance strained MQW EAM integrated with a DFB laser. The threshold current of 26 mA at CW operation of the device with DFB laser length of 300 mu m and EAM length of 150 mu m has been realized at a modulator bias of 0 V. The devices also exhibit 15 dB on/off ratio at an applied bias voltage of 5 V.

Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser

A novel butt-joint coupling scheme is proposed to improve the coupling efficiency for the integration of a GalnAsP MQW distributed feedback (DFB) laser with an MQW electro-absorption modulator (EAM). The proposed method gives more than 90% coupling efficiency, being much higher than the 26% coupling efficiency of the common MQW-MQW coupling technique. The differential quantum efficiency of the MQW-bulk-MQW coupled device is also much higher than that of the MQW-MQW device, 0.106 mW/mA versus 0.02 mW/mA. The EAM-DFB devices fabricated by the proposed method exhibit a very high modulation efficiency (12 dB/V) from 0 to I V. By adopting a high-mesa ridge waveguide and buried polyimide, the capacitance of the modulator is reduced to about 0.28 pF. The experimental results demonstrate that the method can replace the conventional MQW-MQW coupling technique to fabricate high-quality integrated photonic devices. (C) 2007 Elsevier B.V. All rights reserved.

High-power electroabsorption modulator for radio over fibre system

An electroabsorption modulator using an intra-step quantum well (IQW) active region is fabricated for a radio over fibre system. The strain-compensated InGaAsP/InGaAsP IQW shows good material quality and improved modulation properties, high extinction ratio efficiency (10 dB V-1) and low capacitance (< 0.42 pF), with which high frequency (> 15 GHz) can be obtained. High-speed measurement under high-power excitation shows no power saturation up to an excitation power of 21 dBm. To our knowledge, the input optical power is the highest reported for a multi-quantum well EAM without a heat sink.