197 resultados para Dielectric wave guides


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DFB lasers with continuously and arbitrarily chirped gratings of ultrahigh spatial precision are implemented by a method we proposed recently, using bent waveguides on homogeneous grating fields. Choosing individual bending functions we generate special chirping functions and obtain additional degrees of freedom to tailor and improve specific device performances, We present two applications for lasers showing several improved device properties and the effectiveness of our method, First, we implement continuously distributed phase-shifted lasers, revealing a considerably reduced photon pile-up, higher single-longitudinal mode stability, higher output power, lower linewidth, and higher yield than conventional abruptly phase-shifted lasers, Second, a novel tuning principle is applied in chirped multiple-section DFB lasers, showing 5.5-nm wavelength tuning, without any gaps, maintaining high side-mode suppression.

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We have implemented and studied a new type of tunable multiple-section semiconductor distributed feedback (DFB) laser using tailored chirped DFB gratings. Arbitrarily and continuously chirped DFB gratings are defined by bent waveguides on homogeneous grating fields with ultrahigh spatial precision, The mathematical bending functions are optimized in this case to provide enlarged wavelength tuning ranges. We present the results of model calculations, the technological device realization and experimental results of the DFB laser characterization e.g. a tuning range of 5.5 mm without wavelength gaps and high side mode suppression ratio.

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We report micromodification of Eu element distribution in a silicate glass with femtosecond laser irradiation. Elemental analysis shows that the content of Eu decreased at the focal point and increased in a ring-shaped region around the focal point, which indicates migration of Eu ions has been induced by the femtosecond laser irradiation. Confocal fluorescence spectra demonstrate that the fluorescence intensity of Eu3+ ions increased by 20% in the laser-induced, Eu-enriched, ring-shaped region compared with that for nonirradiated glass. The mechanism for the laser induced change in fluorescence properties of Eu3+ has been investigated. (C) 2009 Optical Society of America

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A technique for enhanced generation of selected high harmonics in a gas medium, in a high ionization limit, is proposed in this paper. An aperiodically corrugated hollow-core fiber is employed to modulate the intensity of the fundamental laser pulse along the direction of propagation, resulting in multiple quasi-phase-matched high harmonic emissions at the cutoff region. Simulated annealing (SA) algorithm is applied for optimizing the aperiodic hollow-core fiber. Our simulation shows that the yield of selected harmonics is increased equally by up to 2 orders of magnitude compared with no modulation and this permits flexible control of the quasi-phase-matched emission of selected harmonics by appropriate corrugation. (c) 2007 Optical Society of America.

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In this study, we examined the microstructure of crystals generated in borate glass by femtosecond laser irradiation (FSLI). The distribution of the high-temperature and low-temperature phases of barium metaborate crystals produced in the borate glass is analyzed using Raman spectroscopy. We then propose the possible mechanism for the generation of crystals in glass by FSLI.

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High-uniform nanowires with diameters down to 50 nm are directly taper-drawn from bulk glasses. Typical loss of these wires goes down to 0.1 dB/mm for single-mode operation. Favorable photonic properties such as high index for tight optical confinement in tellurite glass nanowires and photoluminescence for active devices in doped fluoride and phosphate glass nanowires are observed. Supporting high-index tellurite nanowires with solid substrates (such as silica glass and MgF2 crystal) and assembling low-loss microcoupler with these wires are also demonstrated. Photonic nanowires demonstrated in this work may open up vast opportunities for making versatile building blocks for future micro- and nanoscale photonic circuits and components. (c) 2006 Optical Society of America.

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We have observed periodically aligned nanovoid structures inside a conventional borosilicate glass induced by a single femtosecond (fs) laser beam for the first time, to our knowledge. The spherical voids of nanosized diameter were aligned spontaneously with a period along the propagation direction of the laser beam. The period, the number of voids, and the whole length of the aligned void structure were controlled by changing the laser power, the pulse number, and the position of the focal point.

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Thermal stress-induced birefringence in borate glass which has been irradiated by 800-nm femtosecond laser pulses is observed under cross-polarized light. Due to the high temperature and pressure formed in the focal volume, the material at the edge of the micro-modified region is compressed between the expanding region and the unheated one, then stress emerges. Raman spectroscopy is used to investigate the stress distribution in the micro-modified region and indicates the redistributions of density and refractive index by Raman peak shift. We suggest that this technique can develop waveguide polarizers and Fresnel zone plates in integrated optics.

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We investigate two-photon excited fluorescence from CdSe quantum dots with a center-emitting wavelength of 655 nm on SiN photonic crystals. We find that two-photon excited fluorescence is enhanced by more than 1 order of magnitude in the vertical direction when a photonic crystal is used compared to the fluorescence spectra in the absence of photonic crystals. The spectrum of two-photon excited fluorescence from quantum dots on SiN photonic crystal is observed to shift to blue compared to that from quantum dots on SiN without photonic crystals. (C) 2010 Optical Society of America

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1550 nm AlGaInAs/InP long rectangle resonator lasers with three sides surrounded by SiO2 and p electrode layers are fabricated by planar technology, and room-temperature continuous-wave lasing is realized for a laser with a length of 53 mu m and a width of 2 mu m. Multiple peaks with wavelength intervals of Fabry-Perot mode intervals and mode Q factors of about 400 and a lasing mode with a Q factor over 8000 are observed from the lasing spectrum at threshold current. The numerical results of the FDTD simulation indicate that the lasing mode may be a whispering-gallery mode, which is a coupled mode of two high-order transverse modes of the waveguide.

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A wafer-level testable silicon-on-insulator-based microring modulator is demonstrated with high modulation speed, to which the grating couplers are integrated as the fiber-to-chip interfaces. Cost-efficient fabrications are realized with the help of optical structure and etching depth designs. Grating couplers and waveguides are patterned and etched together with the same slab thickness. Finally we obtain a 3-dB coupling bandwidth of about 60nm and 10 Gb/s nonreturn-to-zero modulation by wafer-level optical and electrical measurements.

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A new broadband filter, based on the high-order band gap in one-dimensional photonic crystal (PCs) of the form Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si, has been designed by the plane wave expansion method (PWEM) and transfer matrix method (TMM) and fabricated by lithography. The optical response of this filter to normal-incident and oblique-incident light proves that utilizing the high-order band gaps of PCs is an efficient method to lower the difficulties of fabricating PCs, increase the etching depth of semiconductor materials, and reduce the coupling loss at the interface between optical fibers and PC device. (c) 2007 Elsevier B.V. All rights reserved.

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SiO2-TiO2 sol-gel films are deposited on SiO2/Si by dip-coating technique. The SiO2-TiO2 strips are fabricated by laser direct writing using all ytterbium fiber laser and followed by chemical etching. Surface structures, morphologies and roughness of the films and strips are characterized. The experimental results demonstrate that the SiO2-TiO2 sol-gel film is loose in Structure and a shrinkage concave groove forms if the film is irradiated by laser beam. The surface roughness of both non-irradiated and laser irradiated areas increases with the chemical etching time. But the roughness of laser irradiated area increases more than that of non-irradiated area under the same etching time. After being etched for 28 s, the surface roughness value of the laser irradiated area increases from 0.3 nm to 3.1 nm.

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We report on the fabrication of the nanowires with InGaAs/GaAs heterostructures on the GaAs(111) B substrate using selective-area metal organic vapor phase epitaxy. Fabry-Perot microcavity modes were observed in the nanowires with perfect end facets dispersed onto the silicon substrate and not observed in the free-standing nanowires. We find that the calculated group refractive indices only considering the material dispersion do not agree with the experimentally determined values although this method was used by some researchers. The calculated group refractive indices considering both the material dispersion and the waveguide dispersion agree with the experimentally determined values well. We also find that Fabry-Perot microcavity modes are not observable in the nanowires with the width less than about 180 nm, which is mainly caused by their poor reflectivity at the end facets due to their weak confinement to the optical field. (C) 2009 Optical Society of America