Effect of Pb Volatilization on Dielectric Properties of 0.77PbMg1/3(Nb0.9Ta0.1)2/3O3-0.23PbTiO3

Lead magnesium niobate-lead titanate (PMN-PT) is an intriguing candidate for applications in many electronic devices such as multi-layer capacitors, electro-mechanical transducers etc. because of its high dielectric constant, low dielectric loss and high strain near the Curie temperature. As an extension of our previous work on Ta-doped PMNT-PT aimed at optimizing the performance and reducing the cost, this paper focuses on the effect of Pb volatilization on the dielectric properties of 0.77Pb(Mg1/3(Nb0.9Ta0.1)2/3)O3-0.23PbTiO3. The dielectric constant and loss of the samples are measured at different frequencies and different temperatures. The phase purity of this compound is determined by X-ray diffraction pattern. It is found that the volatilization during sintering does influence the phase formation and dielectric properties. The best condition is sintering with 0.5 g extra PbO around a 4 g PMNT-PT sample.

Generation of 5 fs, 0.7 mJ pulses at 1 kHz through cascade filamentation

Two-cycle optical pulses with duration of 5 fs and energy of 0.7 mJ have been generated at 1 kHz by compressing the 38 fs laser pulses from a carrier-envelope phase (CEP) controlled Ti:sapphire laser system through a cascade filamentation compression technique. A simple and effective method is developed to suppress multiple filament formation and stabilize a single filament by inserting a soft aperture with an appropriate diameter into the driving laser beam prior to focusing, resulting in an excellent compressed beam quality. The good beam quality and potentially higher peak power make this ultrashort laser pulse source a significant tool for high-field physics applications. (C) 2007 Optical Society of America.

Quantum interference effects of two coherent population trapping states on the atomic spectral lines of a F-e=0 -> F-g=1 transition

We investigate the fluorescence spectrum in a nearly degenerate atomic system of a F-e = 0 -> F-g = 1 transition by analytically solving Schrodinger equations. An ultranarrow fluorescence spectral line in between the two coherent population trapping windows has been found. Our analytic solutions clearly show the origin of the ultranarrow spectral line. Due to quantum interference effects between two coherent population trapping states, the width and intensity of the central spectral line can be controlled by an external magnetic field. Such an effect may be used to detect a magnetic field.

Coherent spectroscopy of the Rb-87 Fg=1 -> F-e=0 closed transition

This paper has observed linewidth narrowing of dark states in rubidium cell by using the Hanle configuration. The reduction of the coherent resonance width under the transition of Rb-87 F-g = 1 -> F-e = 0 is observed and the qualitative explanation about its mechanism is presented. Multiple subnatural width dips are obtained with a linearly polarized laser beam for the transition of Rb-87 F-g = 0, 1, 2. The feature of negative and positive slope, namely dispersionlike feature, is observed in the transmitted light.

铒玻璃在1．54μm实现1 Hz下3 J和5 Hz下0．6 J的激光输出

近年来,随着激光告警、激光指示、风速测量、激光雷达尤其是激光美容等方面的需求逐渐增加,要求掺铒激光玻璃能够实现比以往更高重复频率以及更大能量的激光输出,其中对脉冲能量的要求达1～10 J。

Enhancement of ferromagnetic properties in In1.99Co0.01O3 by additional Cu doping

This paper reports room-temperature ferromagnetism in Co- and Cu-doped In2O3 samples synthesized by a solid-state reaction method. Structure and composition analyses revealed that Co and Cu were incorporated into the In2O3 lattices. Photoluminescence measurement revealed an additional emission at 520 urn from these doped samples. The magnetic measurement showed that additional Cu doping greatly enhanced the ferromagnetism of In1.99Co0.01O3 bulk samples. The implication of the effects of additional Cu doping is also discussed. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Growth and characterization of ZnO films on (0 0 1), (1 0 0) and (0 1 0) LiGaO2 substrates

ZnO films were fabricated on LiGaO2 (0 0 1), (10 0) and (0 10) planes by RF magnetron sputtering. The structural, morphological and optical properties of as-grown ZnO films were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), Raman spectra and photoluminescence (PL) spectra. It is found that the orientation of ZnO films is strongly dependent on the substrate plane. [0 0 0 11, [1 (1) over bar 00] and [11 (2) over bar0] oriented ZnO films are deposited on LiGaO2 (001), (100) and (010), respectively. AFM shows the (0001) ZnO film consists of well-aligned regular hexagonal grains. Raman spectra reveal a tensile stress in the (0 0 0 1) ZnO film and a compressive stress in (110 0) and (112 0) ZnO films. PL spectra of all ZnO films exhibit only a near-band-edge UV emission peak. (C) 2008 Elsevier B.V. All rights reserved.

光通信用1.55微米InGaAsP/InP DH激光器中的0.95微米发光和俄歇复合

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Lifetime study of N impurity states in GaAs1-xNx (x=0.1%) under hydrostatic pressure

The lifetimes of a series of N-related photoluminescence lines (A(2)-A(6)) in GaAs1-xNx (x=0.1%) were studied under hydrostatic pressures at similar to 30 K. The lifetimes of A(5) and A(6) were found to increase rapidly with increasing pressure: from 2.1 ns at 0 GPa to more than 20 ns at 0.92 GPa for A(5) and from 3.2 ns at 0.63 GPa to 10.8 ns at 0.92 GPa for A(6). The lifetime is found to be closely correlated with the binding energy of the N impurity states, which is shown either in the pressure dependence for a given emission line or in the lifetime variation from A(2) to A(6). (c) 2006 American Institute of Physics.

Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands

We report the effect of InchiGa1-chiAs (0 less than or equal to chi less than or equal to0.4) capping layer on photoluminescence (PL) properties of 1.3 mum wavelength self-assembled InAs quantum islands, which are formed via depositing 3.5 monolayers (ML) InAs on GaAs (1 0 0) substrate by molecular beam epitaxy (MBE). Compared with the InchiGa1-chiAs capping layer containing a larger In mole fraction chi greater than or equal to0.2 and the GaAs capping layer (chi = 0), the InAs islands covered by the In0.1Ga0.9As layer show PL with lower emission energy, narrower full-width at half-maximum (FWHM), and quite stronger intensity. The PL peak energy and FWHM become more temperature dependent with the increase of In content in the InchiGa1-chiAs capping layer (chi greater than or equal to0.2), while the InAs islands covered by the In0.1Ga0.9As layer is much less temperature sensitive. In addition, the InAs islands covered by the In0.1Ga0.9As capping layer show room temperature PL wavelength at about 1.3 mum. (C) 2001 Published by Elsevier Science B.V.

Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate

Self-assembled In0.9Ga0.1As, In0.9Al0.1As, and InAs quantum dots (QD) were fabricated in an InAlAs matrix lattice-matched to an InP substrate by molecular beam epitaxy. Preliminary characterizations were performed using transmission electron microscopy, photoluminescence, and reflection high-energy electron diffraction. Experimental results reveal clear differences in QD formation, size distribution, and luminescence between the InAs and In-0.9(Ga/Al)(0.1)As samples, which show the potential of introducing ternary compositions to adjust the structural and optical properties of QDs on an InP substrate. (C) 2000 American Institute of Physics. [S0021-8979(00)10213-0].

A novel 1.3-mu m high T-0 AlGaInAs/InP strained-compensated multi-quantum well complex-coupled distributed feedback laser diode

A 1.3-mu m AlGaInAs/InP buried heterostructure (BH) stripe distributed feedback laser with a novel AlInAs/InP complex-coupled grating grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) is proposed and demonstrated. A high characteristic temperature (T-0 = 90K between 20-80 degrees C) and temperature-insensitive slope efficiency (0.25 dB drop from 20 to 80 degrees C) in 1.3 mu m AlGaInAs/InP DFB lasers was obtained by introducing AI(Ga)InAs graded-index separate-confinement heterostructure (GRINSCH) layers and a strained-compensated (SC) multi-quantum well (MQW).