8 resultados para Selective catalytic properties

em Universidad Politécnica de Madrid


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El proyecto que se presenta a continuación recoge la adaptación de una Central Térmica de carbón al cumplimiento de la DIRECTIVA 2010/75/UE DEL PARLAMENTO EUROPEO Y DEL CONSEJO de 24 de noviembre de 2010 sobre las emisiones industriales. La Central sobre la que se realiza el proyecto tiene un grupo térmico de carbón suscritico refrigerado por agua, con una potencia a plena carga de 350 MWe y de 190 MWe a mínimo técnico. Genera 1 090 t/h de vapor a 540 °C y 168 kg/cm2 funcionando a plena carga. Actualmente las emisiones de NOx son de 650 mg/m3, (condiciones normales, seco, 6 % O2). El objeto del proyecto es reducir estas emisiones a un valor máximo de 200 mg/m3 en las mismas condiciones. El proyecto analiza detalladamente las condiciones actuales de operación de la instalación en cuanto a combustible utilizado, horas de funcionamiento, condiciones climáticas y producción. Se analiza así mismo, todas las técnicas disponibles en mercado para la reducción del NOx, diferenciando entre medidas primarias (actúan sobre los efectos de formación) y secundarias (limpieza de gases). Las medidas primarias ya están implementadas en la central, por tanto, el proyecto plantea la reducción con medidas secundarias. De las medidas secundarias analizadas se ha seleccionado la instalación de un Reactor de Reducción Selectiva Catalítica (Reactor SCR). Tras un análisis de los diferentes reactores y catalizadores disponibles se ha seleccionado un reactor de configuración High-dust, una disposición de catalizador en 3 capas más 1, cuyos componentes están basados en óxidos metálicos (TiO2, V2O5, WO3) y estructura laminar. Se ha buscado la instalación del reactor para operar a una temperatura inferior a 450 °C. Como agente reductor se ha seleccionado NH3 a una dilución del 24,5 %. El proyecto recoge también el diseño de todo el sistema de almacenamiento, evaporación, dilución e inyección de amoniaco. El resultado del proyecto garantiza una concentración en los gases de salida por la chimenea inferior 180 mg/m3(n) de NOx. La reducción del NOx a los límites establecidos, tienen un coste por MWh neto generado para la central, trabajando 60 % a plena carga y 40 % a mínimo técnico y una amortización de 10 años, de 4,10 €/MWh. ABSTRACT The following project shows the compliance adjustment of a coal-fired power station to the 2010/75/EU Directive of the European Parliament and Council 24th November 2010 on industrial emissions. The project is based on a power station with a subcritical thermal coal unit, cooled with water, with a maximum power of 350 MWe and a technical minimum of 190 MWe. It produces 1 090 t/h of steam at 540 ° C and 168 kg/cm2 operating under full load. Currently, NOx emissions are 650 mg / m3 (normal conditions, dry, 6% O2). The project aims to reduce these emissions to a maximum value of 200 mg / m3 under the same conditions. The project analyses in detail the current operating conditions of the system in terms of fuel used, hours of operation, climatic conditions and production. In addition, it also analyses every available technique of NOx reduction on the market, distinguishing between primary (acting on the effects of formation) and secondary measures (gas cleaning). Primary measures are already implemented in the plant, thus proposing reduction with secondary measures. Among the secondary measures analyzed, it has been selected to install a Selective Catalytic Reduction Reactor (SCR Reactor). Having researched the different reactors and catalysts available, for the reactor has been selected High-dust configuration, an arrangement of catalyst in 3 layers plus 1, whose components are based on metal oxides (TiO2, V2O5, WO3) and laminar structure. The reactor has been sought facility to operate at a temperature below 450 ° C. NH3 diluted to 24,5 % has been selected as reducing agent. The project also includes the design of the entire storage system, evaporation, dilution and ammonia injection. The results of the project ensure a gas concentration in the lower chimney exit below 180 mg / m3(n) NOx. The reduction of NOx to the established limits has a cost per net MWh generated in the plant, working at 60% of full load and at 40% of technical minimum, with an amortization of 10 years, 4,10 € / MWh.

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A relevant issue concerning optoelectronic devices based on III-nitrides is the presence of strong polarization fields that may reduce efficiency.

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GaN/InGaN nanorods have attracted much scientific interest during the last decade because of their unique optical and electrical properties [1,2]. The high crystal quality and the absence of extended defects make them ideal candidates for the fabrication of high efficiency opto-electronic devices such as nano-photodetectors, light-emitting diodes, and solar cells [1-3]. Nitrides nanorods are commonly grown in the self-assembled mode by plasma-assisted molecular beam epitaxy (MBE) [4]. However, self-assembled nanorods are characterized by inhomogeneous heights and diameters, which render the device processing very difficult and negatively affect the electronic transport properties of the final device. For this reason, the selective area growth (SAG) mode has been proposed, where the nanorods preferentially grow on pre-defined sites on a pre-patterned substrate [5].

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This work reports on the morphology control of the selective area growth of GaN-based nanostructures on c-plane GaN templates. By decreasing the substrate temperature, the nanostructures morphology changes from pyramidal islands (no vertical m-planes), to GaN nanocolumns with top semipolar r-planes, and further to GaN nanocolumns with top polar c-planes. When growing InGaN nano-disks embedded into the GaN nanocolumns, the different morphologies mentioned lead to different optical properties, due to the semi-polar and polar nature of the r-planes and c-planes involved. These differences are assessed by photoluminescence measurements at low temperature and correlated to the specific nano-disk geometry.

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The aim of this work is to provide an overview on the recent advances in the selective area growth (SAG) of (In)GaN nanostructures by plasma assisted molecular beam epitaxy, focusing on their potential as building blocks for next generation LEDs. The first three sections deal with the basic growth mechanisms of GaN SAG and the emission control in the entire ultraviolet to infrared range, including approaches for white light emission, using InGaN disks and thick segments on axial nanocolumns. SAG of axial nanostructures is eveloped on both GaN/sapphire templates and GaN-buffered Si(111). As an alternative to axial nanocolumns, section 4 reports on the growth and characterization of InGaN/GaN core-shell structures on an ordered array of top-down patterned GaN microrods. Finally, section 5 reports on the SAG of GaN, with and without InGaN insertion, on semi-polar (11-22) and non-polar (11-20) templates. Upon SAG the high defect density present in the templates is strongly reduced as indicated by a dramatic improvement of the optical properties. In the case of SAG on nonpolar (11-22) templates, the formation of nanostructures with a low aspect ratio took place allowing for the fabrication of high-quality, non-polar GaN pseudo-templates by coalescence of these nanostructures.

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The thermal, mechanical, and adhesive properties of nanoclay-modified adhesives were investigated. Two organically modified montmorillonites: Cloisite 93A (C93A) and Nanomer I.30E (I.30E) were used as reinforcement of an epoxy adhesive. C93A and I.30E are modified with tertiary and primary alkyl ammonium cations, respectively. The aim was to study the influence of the organoclays on the curing, and on the mechanical and adhesive properties of the nanocomposites. A specific goal was to compare their behavior with that of Cloisite30B/epoxy and Cloisite15A/ epoxy nanocomposites that we have previously studied. Both C30B and C15A are modified with quaternary alkyl ammonium cations. Differential scanning calorimetry results showed that the clays accelerate the curing reaction, an effect that is related to the chemical structure of the ammonium cations. The three Cloisite/nanocomposites showed intercalated clay structures,the interlayer distance was independent of the clay content. The I.30E/epoxy nanocomposites presented exfoliated structure due to the catalytic effect of the organic modifier. Clay-epoxy nanocompo-sites showed lower glass transition temperature (Tg) and higher values of storage modulus than neat epoxy thermoset, with no significant differences between exfoliated or intercalated nanocom-posites. The shear strength of aluminum joints using clay/epoxy adhesives was lower than with the neat epoxy adhesive. The wáter aging was less damaging for joints with I.30E/epoxy adhesive.

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Protein engineering of gluten, the exogenous effector in celiac disease, seeking its detoxification by selective chemical modification of toxic epitopes is a very attractive strategy and promising technology when compared to pharmacological treatment or genetic engineering of wheat. Here we present a simple and efficient chemo-enzymatic methodology that decreases celiac disease toxic epitopes of gluten proteins improving its technological value through microbial transglutaminase-mediated transamidation of glutamine with n-butylamine under reducing conditions. First, we found that using low concentrations of amine-nucleophile under non-reducing conditions, the decrease in toxic epitopes is mainly due to transglutaminase-mediated cross-linking. Second, using high amine nucleophile concentrations protein cross-linking is substantially reduced. Third, reducing conditions increase 7-fold the transamidation reaction further decreasing toxic epitopes amount. Fourth, using n-butylamine improves gluten hydrophobicity that strengthens the gluten network. These results open the possibility of tailoring gluten for producing hypoallergenic flours while still taking advantage of the unique viscoelastic properties of gluten.

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This work reports on the selective area growth mechanism of green-emitting InGaN/GaN nanocolumns. The evolution of the morphology of the InGaN segment is found to depend critically on the nominal III/V ratio as well as the diameter of the GaN section. In addition, the In distribution inside the InGaN segment is found to depend on the local III/V and In/Ga ratios.