Correlation among Growth Conditions, Morphology, and Optical Properties of Nanocolumnar InGaN/GaN Heterostructures Selectively Grown by Molecular Beam Epitaxy
| Data(s) |
2015
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|---|---|
| Resumo |
This work reports on the selective area growth mechanism of green-emitting InGaN/GaN nanocolumns. The evolution of the morphology of the InGaN segment is found to depend critically on the nominal III/V ratio as well as the diameter of the GaN section. In addition, the In distribution inside the InGaN segment is found to depend on the local III/V and In/Ga ratios. |
| Formato |
application/pdf |
| Identificador | |
| Idioma(s) |
eng |
| Relação |
http://oa.upm.es/40859/1/INVE_MEM_2015_220178.pdf http://pubs.acs.org/doi/abs/10.1021/cg501798j info:eu-repo/grantAgreement/EC/FP7/GECCO 280694-2 CAM/P2009/ESP- 1503 MICINN MAT2011-26703 info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1021/cg501798j |
| Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess |
| Fonte |
Crystal Growth & Design, ISSN 1528-7483, 2015, Vol. 15, No. 6 |
| Palavras-Chave | #Electrónica #Telecomunicaciones |
| Tipo |
info:eu-repo/semantics/article Artículo PeerReviewed |
