Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies


Autoria(s): Albert, Steven; Bengoechea Encabo, Ana; Lefebvre, P.; Barbagini, Francesca; Sánchez García, Miguel Angel; Calleja Pardo, Enrique; Jahn, U.; Trampert, Achim
Data(s)

01/06/2012

Resumo

This work reports on the morphology control of the selective area growth of GaN-based nanostructures on c-plane GaN templates. By decreasing the substrate temperature, the nanostructures morphology changes from pyramidal islands (no vertical m-planes), to GaN nanocolumns with top semipolar r-planes, and further to GaN nanocolumns with top polar c-planes. When growing InGaN nano-disks embedded into the GaN nanocolumns, the different morphologies mentioned lead to different optical properties, due to the semi-polar and polar nature of the r-planes and c-planes involved. These differences are assessed by photoluminescence measurements at low temperature and correlated to the specific nano-disk geometry.

Formato

application/pdf

Identificador

http://oa.upm.es/16459/

Idioma(s)

eng

Publicador

E.T.S.I. Telecomunicación (UPM)

Relação

http://oa.upm.es/16459/1/INVE_MEM_2012_134099.pdf

http://apl.aip.org/resource/1/applab/v100/i23/p231906_s1

info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4728115

Direitos

http://creativecommons.org/licenses/by-nc-nd/3.0/es/

info:eu-repo/semantics/openAccess

Fonte

Applied Physics Letters, ISSN 0022-0248, 2012-06, Vol. 100, No. 23

Palavras-Chave #Telecomunicaciones #Física
Tipo

info:eu-repo/semantics/article

Artículo

PeerReviewed