Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies
Data(s) |
01/06/2012
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Resumo |
This work reports on the morphology control of the selective area growth of GaN-based nanostructures on c-plane GaN templates. By decreasing the substrate temperature, the nanostructures morphology changes from pyramidal islands (no vertical m-planes), to GaN nanocolumns with top semipolar r-planes, and further to GaN nanocolumns with top polar c-planes. When growing InGaN nano-disks embedded into the GaN nanocolumns, the different morphologies mentioned lead to different optical properties, due to the semi-polar and polar nature of the r-planes and c-planes involved. These differences are assessed by photoluminescence measurements at low temperature and correlated to the specific nano-disk geometry. |
Formato |
application/pdf |
Identificador | |
Idioma(s) |
eng |
Publicador |
E.T.S.I. Telecomunicación (UPM) |
Relação |
http://oa.upm.es/16459/1/INVE_MEM_2012_134099.pdf http://apl.aip.org/resource/1/applab/v100/i23/p231906_s1 info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4728115 |
Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess |
Fonte |
Applied Physics Letters, ISSN 0022-0248, 2012-06, Vol. 100, No. 23 |
Palavras-Chave | #Telecomunicaciones #Física |
Tipo |
info:eu-repo/semantics/article Artículo PeerReviewed |