Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks

The influence of the substrate temperature, III/V flux ratio, and mask geometry on the selective area growth of GaN nanocolumns is investigated. For a given set of growth conditions, the mask design (diameter and pitch of the nanoholes) is found to be crucial to achieve selective growth within the nanoholes. The local III/V flux ratio within these nanoholes is a key factor that can be tuned, either by modifying the growth conditions or the mask geometry. On the other hand, some specific growth conditions may lead to selective growth but not be suitable for subsequent vertical growth. With optimized conditions, ordered GaN nanocolumns can be grown with a wide variety of diameters. In this work, ordered GaN nanocolumns with diameter as small as 50 nm are shown.

Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography

Selective area growth of a-plane GaN nanocolumns by molecular beam epitaxy was performed for the first time on a-plane GaN templates. Ti masks with 150 nm diameter nanoholes were fabricated by colloidal lithography, an easy, fast and cheap process capable to handle large areas. Even though colloidal lithography does not provide a perfect geometrical arrangement like e-beam lithography, it produces a very homogeneous mask in terms of nanohole diameter and density, and is used here for the first time for the selective area growth of GaN. Selective area growth of a-plane GaN nanocolumns is compared, in terms of anisotropic lateral and vertical growth rates, with GaN nanocolumns grown selectively on the c-plane

Control of the morphology on selective area growth of GaN nanocolumns by rf-plasma-assisted

Selective area growth (SAG) of GaN nanocolumns (NCs), making use of patterned or masked (nanoholes) substrates, yields a periodic, homogeneous distribution of nanostructures, that makes their processing much easier compared with self-assembled ones. In addition, the control on the diameter and density of NCs avoids dispersion in the electrooptical characteristics of the heterostructures based on this type of material (embedded InGaN/GaN quantum disks for example). Selective area growth using a mask with nanohole arrays has been demonstrated by rf-plasma-assisted MBE [1, 2].

E-beam nanopatterning for the selective area growth of III-V nitride nanorods

GaN/InGaN nanorods have attracted much scientific interest during the last decade because of their unique optical and electrical properties [1,2]. The high crystal quality and the absence of extended defects make them ideal candidates for the fabrication of high efficiency opto-electronic devices such as nano-photodetectors, light-emitting diodes, and solar cells [1-3]. Nitrides nanorods are commonly grown in the self-assembled mode by plasma-assisted molecular beam epitaxy (MBE) [4]. However, self-assembled nanorods are characterized by inhomogeneous heights and diameters, which render the device processing very difficult and negatively affect the electronic transport properties of the final device. For this reason, the selective area growth (SAG) mode has been proposed, where the nanorods preferentially grow on pre-defined sites on a pre-patterned substrate [5].

Efficient phosphor-free, white light emission from ordered arrays of GaN/InGaN nanocolumnar LEDs grown by Selective Area MBE

We fabricate and characterize novel LEDs based on InGaN/GaN nanocolumns grown on patterned substrates, leading to the periodically ordered growth of emitters directly producing white light

Understanding the Selective Area Nucleation and Growth of GaN nanocolumns by MBE using Ti nanomasks

•Self- assembled Ga(In)N Nanorods and Nanostructures •Ordered growth of GaN Nanorods: masks issues •Ordered growth of GaN Nanorods: mechanisms •White NanoLEDs

A technique for recursive invariance detection and selective program specialization

This paper presents a technique for achieving a class of optimizations related to the reduction of checks within cycles. The technique uses both Program Transformation and Abstract Interpretation. After a ñrst pass of an abstract interpreter which detects simple invariants, program transformation is used to build a hypothetical situation that simpliñes some predicates that should be executed within the cycle. This transformation implements the heuristic hypothesis that once conditional tests hold they may continué doing so recursively. Specialized versions of predicates are generated to detect and exploit those cases in which the invariance may hold. Abstract interpretation is then used again to verify the truth of such hypotheses and conñrm the proposed simpliñcation. This allows optimizations that go beyond those possible with only one pass of the abstract interpreter over the original program, as is normally the case. It also allows selective program specialization using a standard abstract interpreter not speciñcally designed for this purpose, thus simplifying the design of this already complex module of the compiler. In the paper, a class of programs amenable to such optimization is presented, along with some examples and an evaluation of the proposed techniques in some application áreas such as floundering detection and reducing run-time tests in automatic logic program parallelization. The analysis of the examples presented has been performed automatically by an implementation of the technique using existing abstract interpretation and program transformation tools.

Selective ablation with UV lasers of a-Si:H thin film solar cells in direct scribing configuration

Monolithical series connection of silicon thin-film solar cells modules performed by laser scribing plays a very important role in the entire production of these devices. In the current laser process interconnection the two last steps are developed for a configuration of modules where the glass is essential as transparent substrate. In addition, the change of wavelength in the employed laser sources is sometimes enforced due to the nature of the different materials of the multilayer structure which make up the device. The aim of this work is to characterize the laser patterning involved in the monolithic interconnection process in a different configurations of processing than the usually performed with visible laser sources. To carry out this study, we use nanosecond and picosecond laser sources working at 355nm of wavelength in order to achieve the selective ablation of the material from the film side. To assess this selective removal of material has been used EDX (energy dispersive using X-ray) analysis

Identifying yeats belonging to the Brettanomyces/Dekkera genera through the use of selective-differential media

The purpose of this work was to compare and optimise different selective and differential media to aid in isolating spoilage yeasts belonging to the Brettanomyces/Dekkera genera. Growth media containing selective and differential factors were employed. These were inoculated with strains of yeast representing Spanish oenological microbiota. Lastly, some of these isolation media were successfully applied in 24 types of wine with a high ethylphenol content, all of which were from the Haro Oenological Station (La Rioja, Spain). p-coumaric acid was determined using High performance liquid chromatography-photodiode-array detection-electrospray ionization mass spectrometry (HPLC-DAD-ESI/MS); 4-ethylphenol by using Solid phase micro extraction-gas chromatography-mass spectrometry (SPME-GC-MS); and the rest of the analysis was carried out using official OIV methodology. Actidione is the most effective selective factor for isolating Brettanomyces/Dekkera yeast genera. Other secondary selective factors (selective carbon sources, sorbic acid and ethanol as a microbicide agent) may be used successfully to eliminate potential false positivities; however, they slow growth and delay the time to obtain results.

Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies

This work reports on the morphology control of the selective area growth of GaN-based nanostructures on c-plane GaN templates. By decreasing the substrate temperature, the nanostructures morphology changes from pyramidal islands (no vertical m-planes), to GaN nanocolumns with top semipolar r-planes, and further to GaN nanocolumns with top polar c-planes. When growing InGaN nano-disks embedded into the GaN nanocolumns, the different morphologies mentioned lead to different optical properties, due to the semi-polar and polar nature of the r-planes and c-planes involved. These differences are assessed by photoluminescence measurements at low temperature and correlated to the specific nano-disk geometry.

Schizosaccharomyces selective differential media

This study discusses the optimisation of a selectiv e and differential medium which would facilitate the isolation of Schizosaccharomyces (a genus with a low incidence compared to other microorganisms) to select individuals from this genus for industrial purposes, especially in light of the recent approval of the use of yeasts from this genus in the wine industry by the International Organisation of Vine and Wine, or to detect the presence of such yeasts, for those many authors who consider them food spoilers. To this end, we studied various selective differential agents based on the main thephysiological characteristics of this species, such as its high resistance to high concentrations of sugar, sulfur dioxide, sorbic acid, benzoic acid, acetic acid or malo ethanolic fermentation. This selective medium is based on the resistance of the genus to the antibiotic actidione and its high resistance to inhibitory agents such as benzoic acid compared to possible microorganisms which can give rise to false positive results. Malic acid was used as a differential fact or due to the ability of this genus to metabolise it to ethanol, which allows detecting of the degradation of this compound. Lastly, the medium was successfully used to isolate strains of Schizosaccharomyces pombe from honey.

Influence of substrate type and orientation on the morphology and optical properties of selective area growth of GaN and InGaN nanocolumns

A relevant issue concerning optoelectronic devices based on III-nitrides is the presence of strong polarization fields that may reduce efficiency.

New selective earth faults only current directional method for isolated neutral systems

In order to achieve total selectivity at electrical distribution networks it is of great importance to analyze the defect currents at ungrounded power systems. This information will help to grant selectivity at electrical distribution networks ensuring that only the defect line or feeder is removed from service. In the present work a new selective and directional protection method for ungrounded power systems is evaluated. The new method measures only defect currents to detect earth faults and works with a directional criterion to determine the line under faulty conditions. The main contribution of this new technique is that it can detect earth faults in outgoing lines at any type of substation avoiding the possible mismatch of traditional directional earth fault relays. This detection technique is based on the comparison of the direction of a reference current to the direction of all earth fault capacitive currents at all the feeders connected to the same bus bars. This new method has been validated through computer simulations. The results for the different cases studied are remarkable, proving total validity and usefulness of the new method.

Quantum key distribution based on selective post-processing in passive optical networks

One of the main obstacles to the widespread adoption of quantum cryptography has been the difficulty of integration into standard optical networks, largely due to the tremendous difference in power of classical signals compared with the single quantum used for quantum key distribution. This makes the technology expensive and hard to deploy. In this letter, we show an easy and straightforward integration method of quantum cryptography into optical access networks. In particular, we analyze how a quantum key distribution system can be seamlessly integrated in a standard access network based on the passive optical and time division multiplexing paradigms. The novelty of this proposal is based on the selective post-processing that allows for the distillation of secret keys avoiding the noise produced by other network users. Importantly, the proposal does not require the modification of the quantum or classical hardware specifications neither the use of any synchronization mechanism between the network and quantum cryptography devices.

Advances on MBE selective area growth of III-nitride nanostructures: from nanoLEDs to pseudo substrates

The aim of this work is to provide an overview on the recent advances in the selective area growth (SAG) of (In)GaN nanostructures by plasma assisted molecular beam epitaxy, focusing on their potential as building blocks for next generation LEDs. The first three sections deal with the basic growth mechanisms of GaN SAG and the emission control in the entire ultraviolet to infrared range, including approaches for white light emission, using InGaN disks and thick segments on axial nanocolumns. SAG of axial nanostructures is eveloped on both GaN/sapphire templates and GaN-buffered Si(111). As an alternative to axial nanocolumns, section 4 reports on the growth and characterization of InGaN/GaN core-shell structures on an ordered array of top-down patterned GaN microrods. Finally, section 5 reports on the SAG of GaN, with and without InGaN insertion, on semi-polar (11-22) and non-polar (11-20) templates. Upon SAG the high defect density present in the templates is strongly reduced as indicated by a dramatic improvement of the optical properties. In the case of SAG on nonpolar (11-22) templates, the formation of nanostructures with a low aspect ratio took place allowing for the fabrication of high-quality, non-polar GaN pseudo-templates by coalescence of these nanostructures.