Control of the morphology on selective area growth of GaN nanocolumns by rf-plasma-assisted
Data(s) |
2011
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Resumo |
Selective area growth (SAG) of GaN nanocolumns (NCs), making use of patterned or masked (nanoholes) substrates, yields a periodic, homogeneous distribution of nanostructures, that makes their processing much easier compared with self-assembled ones. In addition, the control on the diameter and density of NCs avoids dispersion in the electrooptical characteristics of the heterostructures based on this type of material (embedded InGaN/GaN quantum disks for example). Selective area growth using a mask with nanohole arrays has been demonstrated by rf-plasma-assisted MBE [1, 2]. |
Formato |
application/pdf |
Identificador | |
Idioma(s) |
eng |
Publicador |
E.T.S.I. Telecomunicación (UPM) |
Relação |
http://oa.upm.es/12867/1/INVE_MEM_2011_107991.pdf http://www.icns9.org/ info:eu-repo/semantics/altIdentifier/doi/null |
Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess |
Fonte |
Proceeings of 9th International Conference on Nitride Semiconductors - ICNS9 | 9th International Conference on Nitride Semiconductors - ICNS9 | 10/07/2011 - 15/07/2011 | Glasgow, UK |
Palavras-Chave | #Electrónica |
Tipo |
info:eu-repo/semantics/conferenceObject Ponencia en Congreso o Jornada PeerReviewed |