Formation energy of vacancies in FeCr alloys: Dependence on Cr concentration

A modified version of the concentration-dependent model (CDM) potential (A. Caro et al., Phys. Rev. Lett. 95 (2005) 075702) [1] has been developed to study defects in Fe–Cr for different Crconcentrations. A comparison between this new potential and DFT results for a variety of point defect configurations is performed in order to test its reliability for radiation damage studies. The effect of Crconcentration on the vacancyformationenergy in Fe–Cr alloys is analyzed in detail. This study shows a linear dependence of the vacancyformationenergy on Crconcentration for values above 6% of Cr. However, the formationenergy deviates from the linear interpolation in the region below 6% Crconcentration. In order to understand this behavior, the influence of the relative positions between Cr atoms and vacant sites on the vacancyformationenergy has been studied.

Object Kinetic Monte Carlo calculations of irradiated Fe-Cr dilute alloys: The effect of the interaction radius between substitutional Cr and self-interstitial Fe

ObjectKineticMonteCarlo models allow for the study of the evolution of the damage created by irradiation to time scales that are comparable to those achieved experimentally. Therefore, the essential ObjectKineticMonteCarlo parameters can be validated through comparison with experiments. However, this validation is not trivial since a large number of parameters is necessary, including migration energies of point defects and their clusters, binding energies of point defects in clusters, as well as the interactionradii. This is particularly cumbersome when describing an alloy, such as the Fe–Cr system, which is of interest for fusion energy applications. In this work we describe an ObjectKineticMonteCarlo model for Fe–Cr alloys in the dilute limit. The parameters used in the model come either from density functional theory calculations or from empirical interatomic potentials. This model is used to reproduce isochronal resistivity recovery experiments of electron irradiateddiluteFe–Cr alloys performed by Abe and Kuramoto. The comparison between the calculated results and the experiments reveal that an important parameter is the capture radius between substitutionalCr and self-interstitialFe atoms. A parametric study is presented on the effect of the capture radius on the simulated recovery curves.

High-temperature mechanical properties of aluminium alloys reinforced with titanium diboride (TiB2) particles

The physical and mechanical properties of metal matrix composites were improved by the addition of reinforcements. The mechanical properties of particulate-reinforced metal-matrix composites based on aluminium alloys (6061 and 7015) at high temperatures were studied. Titanium diboride (TiB2) particles were used as the reinforcement. All the composites were produced by hot extrusion. The tensile properties and fracture characteristics of these materials were investigated at room temperature and at high temperatures to determine their ultimate strength and strain to failure. The fracture surface was analysed by scanning electron microscopy. TiB2 particles provide high stability of the aluminium alloys (6061 and 7015) in the fabrication process. An improvement in the mechanical behaviour was achieved by adding TiB2 particles as reinforcement in both the aluminium alloys. Adding TiB2 particles reduces the ductility of the aluminium alloys but does not change the microscopic mode of failure, and the fracture surface exhibits a ductile appearance with dimples formed by coalescence.

Integration of III-V materials on Silicon Substrates for Multi-junction Solar Cell Applications

The work presented here aims to reduce the cost of multijunction solar cell technology by developing ways to manufacture them on cheap substrates such as silicon. In particular, our main objective is the growth of III-V semiconductors on silicon substrates for photovoltaic applications. The goal is to create a GaAsP/Si virtual substrates onto which other III-V cells could be integrated with an interesting efficiency potential. This technology involves several challenges due to the difficulty of growing III-V materials on silicon. In this paper, our first work done aimed at developing such structure is presented. It was focused on the development of phosphorus diffusion models on silicon and on the preparation of an optimal silicon surface to grow on it III-V materials.

R&D on crystalline silicon technology: From metallurgical silicon to the PV module

Founded by Antonio Luque in 1979 Personnel: Personnel: 6464 full full-time time staff (19 professors staff (19 professors, 44 PhD PhD researchers 28 PhD students 13 researchers, 28 PhD students, 13 administrative and maintenance staff), 19 “part time” (11 “external PhD students”, 8 master students) Objective: Objective: Contribute to the deployment of Photovoltaic Solar Electricity through R&D& Contribute to the deployment of Photovoltaic Solar Electricity through R&D&i

Interstitial defects stability in FeCr alloys vs Cr concentration

Finding adequate materials to withstand the demanding conditions in the future fusion and fission reactors is a real challenge in the development of these technologies. Structural materials need to sustain high irradiation doses and temperatures that will change the microstructure over time. A better understanding of the changes produced by the irradiation will allow for a better choice of materials, ensuring a safer and reliable future power plants. High-Cr ferritic/martensitic steels head the list of structural materials due to their high resistance to swelling and corrosion. However, it is well known that these alloys present a problem of embrittlement, which could be caused by the presence of defects created by irradiation as these defects act as obstacles for dislocation motion. Therefore, the mechanical response of these materials will depend on the type of defects created during irradiation. In this work, we address a study of the effect Cr concentration has on single interstitial defect formation energies in FeCr alloys.

Enhanced iron gettering by short, optimized low-temperature annealing after phosphorus emitter diffusion for industrial silicon solar cell processing

The introduction of a low-temperature (LT) tail after P emitter diffusion was shown to lead to considerable improvements in electron lifetime and solar cell performance by different researchers. So far, the drawback of the investigated extended gettering treatments has been the lack of knowledge about optimum annealing times and temperatures and the important increase in processing time. In this manuscript, we calculate optimum annealing temperatures of Fe-contaminated Si wafers for different annealing durations. Subsequently, it is shown theoretically and experimentally that a relatively short LT tail of 15 min can lead to a significant reduction of interstitial Fe and an increase in electron lifetime. Finally, we calculate the potential improvement of solar cell efficiency when such a short-tail extended P diffusion gettering is included in an industrial fabrication process.

Silicon Photomultipliers (SiPM) as novel photodetectors for PET

Next generation PET scanners should fulfill very high requirements in terms of spatial, energy and timing resolution. Modern scanner performances are inherently limited by the use of standard photomultiplier tubes. The use of Silicon Photomultipliers (SiPMs) is proposed for the construction of a 4D-PET module of 4.8×4.8 cm2 aimed to replace the standard PMT based PET block detector. The module will be based on a LYSO continuous crystal read on two faces by Silicon Photomultipliers. A high granularity detection surface made by SiPM matrices of 1.5 mm pitch will be used for the x–y photon hit position determination with submillimetric accuracy, while a low granularity surface constituted by 16 mm2 SiPM pixels will provide the fast timing information (t) that will be used to implement the Time of Flight technique (TOF). The spatial information collected by the two detector layers will be combined in order to measure the Depth of Interaction (DOI) of each event (z). The use of large area multi-pixel Silicon Photomultiplier (SiPM) detectors requires the development of a multichannel Data Acquisition system (DAQ) as well as of a dedicated front-end in order not to degrade the intrinsic detector capabilities and to manage many channels. The paper describes the progress made on the development of the proof of principle module under construction at the University of Pisa.

Mechanical properties of tungsten alloys with Y2O3 and titanium additions

In this research the mechanical behaviour of pure tungsten (W) and its alloys (2 wt.% Ti–0.47 wt.% Y2O3 and 4 wt.% Ti–0.5 wt.% Y2O3) is compared. These tungsten alloys, have been obtained by powder metallurgy. The yield strength, fracture toughness and elastic modulus have been studied in the temperature interval of 25 °C to 1000 °C. The results have shown that the addition of Ti substantially improves the bending strength and toughness of W, but it also dramatically increases the DBTT. On the other hand, the addition of 0.5% Y2O3, is enough to improve noticeably the oxidation behaviour at the higher temperatures. The grain size, fractography and microstructure are studied in these materials. Titanium is a good grain growth inhibitor and effective precursor of liquid phase in HIP. The simultaneous presence of Y2O3 and Ti permits to obtain materials with low pores presence

Optically Reconfigurable RF Circuits using Silicon Switches

Mobile and wireless communications systems have become an important part of our everyday lives. These ubiquitous technologies have a profound effect on how we live. People predict bright future to wireless technologies, but it wouldn’t be possible without a hard work of thousands of scientists in the wireless innovation research arena. My Marie Curie project is investigating enabling technologies for future mobile and wireless communications systems

Ultra-High Efficiency, High-Concentration PV System Based On Spectral Division Between GaInP/GaInAs/Ge And BPC Silicon Cells

A novel HCPV nonimaging concentrator concept with high concentration (>500×) is presented. It uses the combination of a commercial concentration GaInP∕GaInAs∕Ge 3J cell and a concentration Back‐Point‐Contact (BPC) concentration silicon cell for efficient spectral utilization, and external confinement techniques for recovering the 3J cell′s reflection. The primary optical element (POE) is a flat Fresnel lens and the secondary optical element (SOE) is a free‐form RXI‐type concentrator with a band‐pass filter embedded it, both POE and SOE performing Köhler integration to produce light homogenization. The band‐pass filter sends the IR photons in the 900–1200 nm band to the silicon cell. Computer simulations predict that four‐terminal terminal designs could achieve ∼46% added cell efficiencies using commercial 39% 3J and 26% Si cells. A first proof‐of concept receiver prototype has been manufactured using a simpler optical architecture (with a lower concentration, ∼ 100× and lower simulated added efficiency), and experimental measurements have shown up to 39.8% 4J receiver efficiency using a 3J with peak efficiency of 36.9%

Mono-crystalline silicon wafers manufactured by casting methods: Optoelectronic, structural and solar cell study

1) Introduction 2) The Quasi-mono, pseudo-mono, mono-like ERA. 3) Manufacturing mono-cast ingots: COST (seed recycling) 4) Summary and findings 5) Current status at DCWafers

Analysis of the Mechanical Properties of Multicrystalline and Monocrystalline Silicon Wafers Manufactured by Casting Methods

Quasi-monocrystalline silicon wafers have appeared as a critical innovation in the PV industry, joining the most favourable characteristics of the conventional substrates: the higher solar cell efficiencies of monocrystalline Czochralski-Si (Cz-Si) wafers and the lower cost and the full square-shape of the multicrystalline ones. However, the quasi-mono ingot growth can lead to a different defect structure than the typical Cz-Si process. Thus, the properties of the brand-new quasi-mono wafers, from a mechanical point of view, have been for the first time studied, comparing their strength with that of both Cz-Si mono and typical multicrystalline materials. The study has been carried out employing the four line bending test and simulating them by means of FE models. For the analysis, failure stresses were fitted to a three-parameter Weibull distribution. High mechanical strength was found in all the cases. The low quality quasi-mono wafers, interestingly, did not exhibit critical strength values for the PV industry, despite their noticeable density of extended defects.

MBE growth and characterization of InGaN-based films and nanocolumns on Silicon substrates and GaN templates

InN layers: MBE growth issues Growth of InN-based thin films: InN/InGaN QWS on GaN Growth of InN-based nanorods ● Self Self-assembled assembled InN InN nanorods nanorods onon different different substrates substrates ● Self-assembled InGaN nanorods ● Broad- Broad-emission emission nanostructures ● Self Self--assembled assembled InGaN InGaN--based based Qdisks Qdisks ● Selective area growth (SAG) of InGaN Qdisks

Influence of the Lubrication Conditions on the Surface Finish of Turned Aeronautical Aluminium Alloys. A preliminary Study

Nowadays, one of the main objectives that affects the development of any new product is the respect for the environment. Until the late 80's, the development and manufacture of the most of the product were aimed to achieve maximum quality in time and costs with environmental issues relegated to secondary importance. On the other hand, in the 90's, the pressure from factors such as markets, financial and legislative factors, led to environmental considerations being taken into account. In this context, the current aeronautical industry strategies are based on the search for economic, environmental and energy efficiency considerations for all the processes involved in the aircraft manufacturing.