Integration of III-V materials on Silicon Substrates for Multi-junction Solar Cell Applications


Autoria(s): Garcia Tabares Valdivieso, Elisa; García Vara, Iván; Rey-Stolle Prado, Ignacio; Algora del Valle, Carlos; Martín Martín, Diego
Data(s)

2011

Resumo

The work presented here aims to reduce the cost of multijunction solar cell technology by developing ways to manufacture them on cheap substrates such as silicon. In particular, our main objective is the growth of III-V semiconductors on silicon substrates for photovoltaic applications. The goal is to create a GaAsP/Si virtual substrates onto which other III-V cells could be integrated with an interesting efficiency potential. This technology involves several challenges due to the difficulty of growing III-V materials on silicon. In this paper, our first work done aimed at developing such structure is presented. It was focused on the development of phosphorus diffusion models on silicon and on the preparation of an optimal silicon surface to grow on it III-V materials.

Formato

application/pdf

Identificador

http://oa.upm.es/11719/

Idioma(s)

spa

Publicador

E.T.S.I. Telecomunicación (UPM)

Relação

http://oa.upm.es/11719/1/INVE_MEM_2011_97548.pdf

http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5744190&tag=1

info:eu-repo/semantics/altIdentifier/doi/null

Direitos

http://creativecommons.org/licenses/by-nc-nd/3.0/es/

info:eu-repo/semantics/openAccess

Fonte

Proceedings of 8th Spanish Conference on Electron Devices | 8th Spanish Conference on Electron Devices | 08/02/2011 - 11/02/2011 | Palma de Mallorca, España

Palavras-Chave #Telecomunicaciones #Energías Renovables
Tipo

info:eu-repo/semantics/conferenceObject

Ponencia en Congreso o Jornada

PeerReviewed