Enhanced iron gettering by short, optimized low-temperature annealing after phosphorus emitter diffusion for industrial silicon solar cell processing


Autoria(s): Hofstetter, Jasmin; Lelievre, Jean Francoise; Fenning, David P.; Bertoni, Mariana I.; Buonassisi, Tonio; Luque López, Antonio; Cañizo Nadal, Carlos del
Data(s)

2011

Resumo

The introduction of a low-temperature (LT) tail after P emitter diffusion was shown to lead to considerable improvements in electron lifetime and solar cell performance by different researchers. So far, the drawback of the investigated extended gettering treatments has been the lack of knowledge about optimum annealing times and temperatures and the important increase in processing time. In this manuscript, we calculate optimum annealing temperatures of Fe-contaminated Si wafers for different annealing durations. Subsequently, it is shown theoretically and experimentally that a relatively short LT tail of 15 min can lead to a significant reduction of interstitial Fe and an increase in electron lifetime. Finally, we calculate the potential improvement of solar cell efficiency when such a short-tail extended P diffusion gettering is included in an industrial fabrication process.

Formato

application/pdf

Identificador

http://oa.upm.es/11942/

Idioma(s)

spa

Publicador

E.T.S.I. Telecomunicación (UPM)

Relação

http://oa.upm.es/11942/1/INVE_MEM_2011_108542.pdf

http://onlinelibrary.wiley.com/doi/10.1002/pssc.201000334/abstract

info:eu-repo/semantics/altIdentifier/doi/10.1002/pssc.201000334

Direitos

http://creativecommons.org/licenses/by-nc-nd/3.0/es/

info:eu-repo/semantics/restrictedAccess

Fonte

Physica Status Solidi (c), ISSN 1610-1642, 2011, Vol. 8, No. 3

Palavras-Chave #Física #Materiales
Tipo

info:eu-repo/semantics/article

Artículo

PeerReviewed