MBE growth and characterization of InGaN-based films and nanocolumns on Silicon substrates and GaN templates
| Data(s) |
2011
|
|---|---|
| Resumo |
InN layers: MBE growth issues Growth of InN-based thin films: InN/InGaN QWS on GaN Growth of InN-based nanorods ● Self Self-assembled assembled InN InN nanorods nanorods onon different different substrates substrates ● Self-assembled InGaN nanorods ● Broad- Broad-emission emission nanostructures ● Self Self--assembled assembled InGaN InGaN--based based Qdisks Qdisks ● Selective area growth (SAG) of InGaN Qdisks |
| Formato |
application/pdf |
| Identificador | |
| Idioma(s) |
spa |
| Publicador |
E.T.S.I. Telecomunicación (UPM) |
| Relação |
http://oa.upm.es/13542/1/INVE_MEM_2011_113340.pdf http://www.isom.upm.es/GeJpSp2011/index.html |
| Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess |
| Fonte |
Proceedings of 2011 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Devices | 2011 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Devices | 16/03/2011 - 18/03/2011 | Granada, España |
| Palavras-Chave | #Electrónica #Materiales |
| Tipo |
info:eu-repo/semantics/conferenceObject Ponencia en Congreso o Jornada PeerReviewed |
