Effect of wavelength of sensitizing light on holographic storage properties in LiNbO3 : Fe : Ni crystal

By sensitizing with 514 nm green light, 488 nm blue light and 390 nm ultraviolet light, respectively, recording with 633 nm red light, effect of wavelength of sensitizing light on holographic storage properties in LiNbO3:Fe:Ni crystal is investigated in detail. It is shown that by shortening the wavelength of sensitizing light gradually, nonvolatile holographic recording properties of oxidized LiNbO3:Fe:Ni crystal is optimized gradually, 390 nm ultraviolet light is the best as the sensitizing light. Considering the absorption of sensitizing light, to obtain the best performance in two-center holographic recording we must choose a sensitizing wavelength that is long enough to prevent unwanted absorptions (band-to-band, etc.) and short enough to result in efficient sensitization from the deep traps. So in practice a trade-off is always needed. Explanation is presented theoretically. (c) 2005 Elsevier GmbH. All rights reserved.

Tuning the reduction power of supported gold nanoparticle photocatalysts for selective reductions by manipulating wavelength of visible light irradiation

Gold nanoparticles supported on CeO2 were found to be efficient photocatalysts for three selective reductions of organic compounds at ambient temperatures, under irradiation of visible light; their reduction ability can be tuned by manipulating the irradiation wavelength.

Deep-etched high-density fused-silica transmission gratings with high efficiency at a wavelength of 1550 nm

We describe the design, fabrication, and excellent performance of an optimized deep-etched high-density fused-silica transmission grating for use in dense wavelength division multiplexing (DWDM) systems. The fabricated optimized transmission grating exhibits an efficiency of 87.1% at a wavelength of 1550 nm. Inductively coupled plasma-etching technology was used to fabricate the grating. The deep-etched high-density fused-silica transmission grating is suitable for use in a DWDM system because of its high efficiency, low polarization-dependent loss, parallel demultiplexing, and stable optical performance. The fabricated deep-etched high-density fused-silica transmission gratings should play an important role in DWDM systems. (c) 2006 Optical Society of America.

High-efficiency diffraction gratings in fused silica at the wavelength of 632.8 nm

We describe high-efficiency diffraction gratings fabricated in fused silica at the wavelength of 632.8 nm by rigorous coupled-wave analysis (RCWA). High-density holographic gratings, if the groove density falls within the range of 1575-1630 lines/mm and the groove depth within the range of 1.1-1.3 microns, can realize high diffraction efficiencies at the wavelength of 632.8 nm, e.g., the first Bragg diffraction efficiency can theoretically achieve more than 93% both in TE- and TM-polarized incidences, which greatly reduces the polarization-dependent losses. Note that with different groove profiles further optimized, the maximum efficiency of more than 99.69% can be achieved for TM-polarized incidence, or 97.81% for TE-polarized incidence.

High-density holographic recording parameters under different wavelength of a two dyes-sensitized photopolymer

The high-density holographic recording parameters of a novel two dyes-sensitized photopolymer under different exposure wavelengths are studied. The results show that the maximum diffraction efficiency, exposure sensitivity, maximum refraction index modulation, dynamic range, and the exposure time constant increases with the increase of the exposure wavelength. The analysis indicates that the scattering has an important role in the forming of the holographic grating. (c) 2005 Elsevier GmbH. All rights reserved.

High responsivity resonant-cavity-enhanced InGaAs/GaAs quantum-dot photodetector for wavelength of similar to 1 mu m at room temperature

The characteristics of a resonant cavity-enhanced InGaAs/GaAs quantum-dot n-i-n photodiode with only a bottom distributed Bragg reflector used as the cavity mirror, are reported. To suppress the dark current, an AlAs layer is inserted into the device structure as the blocking layer. It turns out that the structure still possesses the resonant coupling nature, and makes Rabi splitting discernible in the photoluminescence spectra. The measured responsivity spectrum of the photocurrent shows a peak at lambda = 1030 nm, and increases rapidly as the bias voltage increases. A peak responsivity of 0.75 A/W, or equivalently an external quantum efficiency of 90.3%, is obtained at V-bias = -1.4 V.

Optical matching layer structures in evanescent coupling photodiodes at a wavelength of 1.55 mu m: physics, design and simulation

We have studied the optical matching layers (OMLs) and external quantum efficiency in the evanescent coupling photodiodes (ECPDs) integrating a diluted waveguide as a fibre-to-waveguide coupler, by using the semi-vectorial beam propagation method (BPM). The physical basis of OML has been identified, thereby a general designing rule of OML is developed in such a kind of photodiode. In addition, the external quantum efficiency and the polarization sensitivity versus the absorption and coupling length are analysed. With an optical matching layer, the absorption medium with a length of 30 mu m could absorb 90% of the incident light at 1.55 mu m wavelength, thus the total absorption increases more than 7 times over that of the photodiode without any optical matching layer.

Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots

We have investigated the effect of different cap layers on the photoluminescence (PL) of self-assembled InAs/GaAs quantum dots (QDs). Based upon different cap layers, the wavelength of InAs QDs can be tuned to the range from 1.3 to 1.5 mum. An InAlAs and InGaAs combination layer can enlarge the energy separation between the ground and first excited radiative transition. GaAs/InAs short period superlattices (SLs) make the emission wavelength shift to 1.53 mum. The PL intensity of InAs QDs capped with GaAs/InAs SLs shows an anomalous increase with increasing temperature. We attribute this to the transfer of carriers between different QDs.

Tuning the resonant wavelength of long period fiber gratings by etching the fiber's cladding

In this paper the resonant wavelength of a long period fiber grating (LPG) is tuned toward longer wavelength by etching the fiber, For LP04 and LP05 cladding modes', the tuning ranges of 23 and 81 nm are achieved, respectively. Also the dependence of the resonant wavelength on the cladding radius of LPG is theoretically simulated. (C) 2001 Elsevier Science B,V. All rights reserved.

Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer

Red shifts of emission wavelength of self-organized In(Cla)As/GaAs quantum dots (QDs) covered by 3 nm thick InxGa1-xAs layer with three different In mole fractions (x = 0.1, 0.2 and 0.3, respectively) have been observed. Transmission electron microscopy images demonstrate that the stress along growth direction in the InAs dots was reduced due to introducing the InxGa1-xAs (x = 0.1, 0.2 and 0.3) covering layer instead of GaAs layer. Atomic force microscopy pictures show a smoother surface of InAs islands covered by an In0.2Ga0.8As layer. It is explained by the calculations that the redshifts of the photoluminescence (PL) spectra from the QDs covered by the InxGa1-xAs (x greater than or equal to 0.1) layers were mainly due to the reducing of the strain other than the InAs/GaAs intermixing in the InAs QDs. The temperature dependent PL spectra further confirm that the InGaAs covering layer can effectively suppress the temperature sensitivity of PL emissions. 1.3 mum emission wavelength with a very narrow linewidth of 19.2 mcV at room temperature has been obtained successfully from In,In0.5Ga0.5As/GaAs self-assembled QDs covered by a 3-nm In0.2Ga0.2As strain reducing layer. (C) 2001 Elsevier Science B.V. All rights reserved.

Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers

We investigate about controlling of photoluminescence (PL) wavelengths of InAs/GaAs self-assembled quantum dots (QDs) sandwiched with combination strained-buffer layer (CSBL) and combination strained-reducing layer (CSRL). The emission peak position of QDs is red-shifted to 1.37 mu m. The density of the QDs is increased to 1.17x10(10) cm(-2). It is indicated that optical properties of QDs could be improved by optimizing of the buffer and covering layers for the QDs. These results may provide a new way to further developing GaAs-based 1.3 mu m light sources.

Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer

Red shifts of emission wavelength of self-organized In(Cla)As/GaAs quantum dots (QDs) covered by 3 nm thick InxGa1-xAs layer with three different In mole fractions (x = 0.1, 0.2 and 0.3, respectively) have been observed. Transmission electron microscopy images demonstrate that the stress along growth direction in the InAs dots was reduced due to introducing the InxGa1-xAs (x = 0.1, 0.2 and 0.3) covering layer instead of GaAs layer. Atomic force microscopy pictures show a smoother surface of InAs islands covered by an In0.2Ga0.8As layer. It is explained by the calculations that the redshifts of the photoluminescence (PL) spectra from the QDs covered by the InxGa1-xAs (x greater than or equal to 0.1) layers were mainly due to the reducing of the strain other than the InAs/GaAs intermixing in the InAs QDs. The temperature dependent PL spectra further confirm that the InGaAs covering layer can effectively suppress the temperature sensitivity of PL emissions. 1.3 mum emission wavelength with a very narrow linewidth of 19.2 mcV at room temperature has been obtained successfully from In,In0.5Ga0.5As/GaAs self-assembled QDs covered by a 3-nm In0.2Ga0.2As strain reducing layer. (C) 2001 Elsevier Science B.V. All rights reserved.

Fabrication and fluorescence study of sensitizing dye TiO2 films

Fluorescence spectra of the sensitizing dye/TiO2 bilayer films were studied. Charge-transfer complexes were formed in the above bilayer.