Photoluminescence and electroluminescence of (Gd2O3-Ga2O3): Ce thin film

A novel electroluminescence oxide phosphor (Gd2O3-Ga2O3):Ce has been prepared by electron beam evaporation. The emission peaks of photoluminescence lie at 390nm and a shoulder at 440nm. However, the electroluminescence of the (Gd2O3-Ga2O3):Ce thin film have four emission peaks at 358nm, 390nm, 439nm and 510nm, respectively. The optical absorption of (Gd2O3-Ga2O3):Ce thin film and the photoluminescence of composite materials with various ratios of Ga2O3/(Gd2O3+Ga2O3) have also been described to investigate the origin of emission of photoluminescence and electroluminescence.

Green electroluminescence generated from the thin film based on a soluble lanthanide complex

Electroluminescent (EL) devices based on a soluble complex Tb(MDP)(3) [Tris-(monododecyl phthalate)Terbium] doped with poly (N-vinylcarbazole) (PVK), (2-(4-biphenyl)-5-(4-t-butylphenyl)-1,3,4-oxadiazole) (PBD) were fabricated. The device structures of ITO/PVK/PVK:PBD:Tb(MDp)(2)/Aiq(3)/Al and ITO/PVK:PBD:Tb(MDP)(3)/Alq(3)/Al were employed. The Tb(MDP), as emissive layer was spin-coated. The EL cell exhibited characteristic emission of terbium ion. (C) 2000 Elsevier Science S.A. All rights reserved.

Studies on electroluminescence using Powder and thin film devices

The subject of electroluminescence has currently acquired great importance because of its potential applications in display systems of a wide variety. A large number of scientists working in commercial, governmental as well as academic institutions all over the world are at present engaged in the intense effort to develop new and efficient phosphor materials and electroluminescent devices. This thesis presents the work carried out by the author in this field during the past few years. The studies discussed in this thesis are mostly confined to the development of some new phosphor materials, their uses in powder and thin film electroluminescent devices and to their electrical and spectral characteristics. Care has been taken to bring' out the physics involved in all the above aspects of the phenomenon

Nonpolar m-plane thin film GaN and InGaN/GaN light-emitting diodes on LiAlO2(100) substrates

The nonpolar m-plane (1 (1) over bar 00) thin film GaN and InGaN/GaN light-emitting diodes (LEDs) grown by metal-organic chemical vapor deposition on LiAlO2 (100) substrates are reported. The LEDs emit green light with output power of 80 mu W under a direct current of 20 mA for a 400x400 mu m(2) device. The current versus voltage (I-V) characteristic of the diode shows soft rectifying properties caused by defects and impurities in the p-n junction. The electroluminescence peak wavelength dependence on injection current, for currents in excess of 20 mA, saturates at 515-516 nm. This proves the absence of polarization fields in the active region present in c-plane structures. The light output intensity versus current (L-I) characteristic of the diode exhibits a superlinear relation at low injection current caused by nonradiative centers providing a shunt path and a linear light emission zone at high current level when these centers are saturated. (c) 2007 American Institute of Physics.

Synthesis and Characterisation of Zinc Gallate Based Phosphors for Thin Film Electroluminescent Devices

Department of Physics, Cochin University of Science and Technology

Synthesis, Growth and Characterization of Oxide Phosphors for Thin Film Electroluminescent Devices

Department of Physics, Cochin University of Science and Technology

Graphene quantum dots directly generated from graphite via magnetron sputtering and the application in thin-film transistors

This work presents a novel method to prepare graphene quantum dots (GQDs) directly from graphite. A composite film of GQDs and ZnO was first prepared using the composite target of graphite and ZnO via magnetron sputtering, followed with hydrochloric acid treatment and dialysis. Morphology and optical properties of the GQDs were investigated using a number of techniques. The as-prepared GQDs are 4-12 nm in size and 1-2 nm in thickness. They also exhibited typical excitation-dependent properties as expected in carbon-based quantum dots. To demonstrate the potential applications of GQDs in electronic devices, pure ZnO and GQD-ZnO thin-film transistors (TFTs) using ZrOx dielectric were fabricated and examined. The ZnO TFT incorporating the GQDs exhibited enhanced performance: an on/off current ratio of 1.7 × 107, a field-effect mobility of 17.7 cm2/Vs, a subthreshold swing voltage of 90 mV/decade. This paper provides an efficient, reproducible and eco-friendly approach for the preparation of monodisperse GQDs directly from graphite. Our results suggest that GQDs fabricated using magnetron sputtering method may envision promising applications in electronic devices.

Investigation of RuO2/Ta2O5 thin film evolution by thermogravimetry combined with mass spectrometry

The thermal evolution process of RuO2–Ta2O5/Ti coatings with varying noble metal content has been investigated under in situ conditions by thermogravimetry combined with mass spectrometry. The gel-like films prepared from alcoholic solutions of the precursor salts (RuCl3·3H2O, TaCl5) onto titanium metal support were heated in an atmosphere containing 20% O2 and 80% Ar up to 600 °C. The evolution of the mixed oxide coatings was followed by the mass spectrometric ion intensity curves. The cracking of retained solvent and the combustion of organic surface species formed were also followed by the mass spectrometric curves. The formation of carbonyl- and carboxylate-type surface species connected to the noble metal was identified by Fourier transform infrared emission spectroscopy. These secondary processes–catalyzed by the noble metal–may play an important role in the development of surface morphology and electrochemical properties. The evolution of the two oxide phases does not take place independently, and the effect of the noble metal as a combustion catalyst was proved.

Thin film deposition and characterization of pure and iron-doped electron-beam evaporated tungsten oxide for gas sensors

Pure Tungsten Oxide (WO3) and Iron-doped (10 at%) Tungsten Oxide (WO3:Fe) nanostructured thin films were prepared using a dual crucible Electron Beam Evaporation techniques. The films were deposited at room temperature in high vacuum condition on glass substrate and post-heat treated at 300 oC for 1 hour. From the study of X-ray diffraction and Raman the characteristics of the as-deposited WO3 and WO3:Fe films indicated non-crystalline nature. The surface roughness of all the films showed in the order of 2.5 nm as observed using Atomic Force Microscopy (AFM). X-Ray Photoelectron Spectroscopy (XPS) analysis revealed tungsten oxide films with stoichiometry close to WO3. The addition of Fe to WO3 produced a smaller particle size and lower porosity as observed using Transmission Electron Microscopy (TEM). A slight difference in optical band gap energies of 3.22 eV and 3.12 eV were found between the as-deposited WO3 and WO3:Fe films, respectively. However, the difference in the band gap energies of the annealed films were significantly higher having values of 3.12 eV and 2.61 eV for the WO3 and WO3:Fe films, respectively. The heat treated samples were investigated for gas sensing applications using noise spectroscopy and doping of Fe to WO3 reduced the sensitivity to certain gasses. Detailed study of the WO3 and WO3:Fe films gas sensing properties is the subject of another paper.

Thin film solar cells based on CU2ZnSnS4 absorber

Cu2ZnSnS4 (CZTS) is considered to be one of the most promising light absorbing materials for low cost, high efficiency thin film solar cells. Compared to conventional CuIn(S, Se)2 (CIS) and Cu(InGa)(S,Se)2 (CIGS) as well as CdTe light absorber, CZTS is only composed of earth-abundant non-toxic elements, ensuring the price competitiveness of this kind of solar cell in the future PV market. However, the research in this area is very limited compared to CIS and CIGS. Detailed studies of both the material and the device are rare, which significantly restricts the development in this area. This paper reviews the progress in the research field of CZTS, particularly the methods which were employed to prepare CZTS absorber material.

Thin-film elemental analyses for precise characterization of minerals

The Analytical Electron Microscope (AEM), with which secondary X-ray emission from a thin (<150nm), electron-transparent material is measured, has rapidly become a versatile instrument for qualitative and quantitative elemental analyses of many materials, including minerals. With due regard for sources of error in experimental procedures, it is possible to obtain high spatial resolution (~20nm diameter) and precise elemental analyses (~3% to 5% relative) from many silicate minerals. In addition, by utilizing the orientational dependence of X-ray emission for certain multi-substituted crystal structures, site occupancies for individual elements within a unit cell can be determined though with lower spatial resolution. The relative ease with which many of these compositional data may be obtained depends in part on the nature of the sample, but, in general, is comparable to other solid state analytical techniques such as X-ray diffraction and electron microprobe analysis. However, the improvement in spatial resolution obtained with the AEM (up to two orders of magnitude in analysis diameter) significantly enhances interpretation of fine-grained assemblages in many terrestrial or extraterrestrial rocks.

Thin-film analyses of silicate standards at 200 kv : the effect of temperature on element loss

Preliminary data is presented on a detailed statistical analysis of k-factor determination for a single class of minerals (amphiboles) which contain a wide range of element concentrations. These amphiboles are homogeneous, contain few (if any) subsolidus microstructures and can be readily prepared for thin film analysis. In previous studies, element loss during the period of irradiation has been assumed negligible for the determination of k-factors. Since this phenomena may be significant for certain mineral systems, we also report on the effect of temperature on k-factor determination for various elements using small probe sizes (approx.20 nm).

Pt/ZnO/SiC thin film for hydrogen gas sensing

Zinc oxide (ZnO) is one of the most promising electronic and photonic materials to date. In this work, we present an enhanced ZnO Schottky gas sensor deposited on SiC substrates in comparison to those reported previously in literature. The performance of ZnO/SiC based Schottky thin film gas sensors produced a forward lateral voltage shift of 12.99mV and 111.87mV in response to concentrations of hydrogen gas at 0.06% and 1% in air at optimum temperature of 330 ºC. The maximum change in barrier height was calculated as 37.9 meV for 1% H2 sensing operation at the optimum temperature.