980 resultados para silicon-modified titania and doped with N
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Fotocatalisadores baseados em nanopartículas de dióxido de titânio modificados fornecem soluções em potencial para a mineralização de poluentes orgânicos em meio aquoso. Agentes modificadores têm sido amplamente investigados com o objetivo de promover a fotoativação pela luz visível. Foram estudadas a nível fundamental até aqui, as modificações estruturais, texturais e óticas causadas pela introdução de silício e nitrogênio na rede da titânia. Titânias puras (TiO2) e modificadas nanoestruturadas, particularmente titânias modificadas com silício (TiO2-SiO2), com razões atômicas Si/Ti de 0,1, 0,2 e 0,3 foram sintetizadas pelo método sol-gel a partir da hidrólise ácida de isopropóxido de titânio(IV) e tetraetoxisilano. As metodolo-gias sintéticas desenvolvidas tentaram aderir aos princípios da Química Verde, dispensando o uso de atmosfera inerte e temperatura e pressão elevadas, o que foi alcançado utilizando-se, principalmente, a agitação ultrassônica. Titânias modificadas com silício e dopadas com ni-trogênio (TiO2-SiO2-N) foram obtidas a partir do pré-tratamento de TiO2-SiO2 a 500 C ao ar e então submetidas ao fluxo de amônia (NH3) a 600 C por 1-3 h e, após resfriamento, foram recozidas a 400 C ao ar. Amostras distintas foram caracterizadas, na forma de pó seco e após calcinação entre 400600 C, por difração de raios X, adsorção de nitrogênio, microscopia eletrônica de varredura e espectroscopia de refletância difusa no UV-Visível. As titânias pu-ras, obtidas principalmente variando-se a razão de hidrólise, foram cristalizadas na forma de anatásio como fase predominante até 600 C, além de traços de brookita presente até 500 C. O rutilo foi identificado a partir de 600 C como fase minoritária, embora apresentando tama-nhos de cristal significativamente maiores que os estimados para o cristal de anatásio. As titâ-nias modificadas com até 20% de silício apresentaram notável estabilidade térmica, evidenci-ada pela presença exclusiva de anatásio até 900 C. Foi também observado o aparecimento de macroporos com diâmetro médio em torno de 55 nm após calcinação a 400 C, diferentemente do que se observou nas amostras em geral. A introdução de baixo teor de silício assegurou às titânias calcinadas valores elevados de área específica, atribuído ao efeito de contenção acentuada na taxa de crescimento do cristal. As titânias modificadas com silício e as titânias puras obtidas com taxa de hidrólise 25:1 para a razão H2O : Ti apresentaram mesoporos com diâmetros médios de mesma dimensão do cristal. As titânias modificadas com silício e dopa-das com nitrogênio apresentaram absorção na região visível entre 400-480 nm, com discreta redução da energia de band gap para as transições eletrônicas consideradas. Titânias calcina-das a 300−400 C apresentaram desempenho fotocatalítico semelhante ao TiO2 P25 da De-gussa sob irradiação UV, na degradação do azo corante Reactive Yellow 145 em soluções a-quosas em pH 5 a 20 1C
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Halide octahedral molybdenum clusters [(Mo6X8)L6]n- possess luminescence properties that are highly promising for biological applications. These properties are rather dependent on the nature of both the inner ligands X (i.e. Cl, Br, or I) and the apical organic or inorganic ligands L. Herein, the luminescence properties and the toxicity of thiol-modified polystyrene microbeads (PS-SH) doped with [(Mo6X8)(NO3)6]2- (X=Cl, Br, I) were studied and evaluated using human epidermoid larynx carcinoma (Hep2) cell cultures. According to our data, the photoluminescence quantum yield of (Mo6I8)@PS-SH is significantly higher (0.04) than that of (Mo6Cl8)@PS-SH (6Br8)@PS-SH (6X8)@PS-SH showed that all three types of doped microbeads had no significant effect on the viability and proliferation of the cells.
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Pure silicon tetrafluoride can be prepared in 66% yield from silicon tetrachloride by refluxing with lead fluoride in acetonitrile. The gas can be reduced to pure silane by lithium aluminum hydride in diethyl ether.
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Polyaniline is chemically synthesised and doped with camphor sulphonic acid. FTIR studies carried out on these samples indicate that the aromatic rings are retained after polymerisation. The percentage of crystallinity for polyaniline doped with camphor sulphonic acid has been estimated from the X-ray diffraction studies and is around 56% with respect to polyaniline emeraldine base. The change in dielectric permittivity with respect to temperature and frequency is explained on the basis of interfacial polarisation. AC conductivity is evaluated from the observed dielectric permittivity. The values of AC and DC conductivity and activation energy are calculated. The activation energy values suggested that the hopping conduction is the prominent conduction mechanism in this system.
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A Li(2)O-B(2)O(3)-Al(2)O(3) glass system, un-doped and doped with LiF, and/or TiO(2) was synthesized by the fusion method and its physical properties were investigated by thermoluminescence (TL), X-ray diffraction (XRD), electron paramagnetic resonance (EPR), atomic force microscopy (AFM) and differential thermal analysis (DTA). The samples were subjected to gamma-rays from a colbalt-60 ((60)Co) source. These techniques provided evidence of LiF and LiF doped with Ti crystal formation in the glass system. A TL glow peak at about 433 K was sensitive to (60)Co gamma-rays and showed good linearity with doses and consequently could be used to quantify radiation doses. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.
Sol-gel synthesis and characterization of Fe(2)O(3) center dot CeO(2) doped with Pr ceramic pigments
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Undoped x center dot alpha-Fe(2)O(3) y center dot CeO(2) and doped with praseodymium ceramic pigments were obtained by the sol-gel method after heat treatment at 800 degrees C for 2 h. These pigments were characterized by XRD, nitrogen adsorption, scanning electron microscopy, ultraviolet-visible absorption spectroscopy and colorimetrical measurements. Red and brown colors with several tonalities were observed after changes with Ce and Pr concentration.
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A study of the transport properties of layered crystalline semiconductors GeS (undoped and doped with Ag, P impurity) under quasihydrostatic pressure using Bridgman anvil system is made for the first time. Pressure-induced effects in undoped crystals reveal initial rise in resistivity followed by two broad peaks at higher pressures. Silver doping induces only minor changes in the behaviour except removing the second peak. Phosphorous impurity is found to have drastic effect on the transport properties. Temperature dependence of the resistivity exhibits two activation energies having opposite pressure coefficients. Results are discussed in the light of intrinsic features of the layered semiconductors.
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The magnetic/nonmagnetic p-n junction was prepared by implanting gadolinium into the n-type silicon with low-energy dual-ion-beam epitaxy technology. The magnetic layer GdxSi1-x shows excellent magnetic properties at room temperature. High magnetic moment 10mu(B) per Gd atom is observed, which is interpreted by RKKY mechanism. Magnetic/nonmagnetic p-n junctions show rectifying behaviour, but no magnetoresistance is observed.
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Organically modified silica xerogels (OMSX) and Eu3+ (Tb3+)-doped OMSX were prepared by the reaction of (3-aminopropyl) triethoxysilane (APS) with 3-isocyanatepropyltriethoxysilane (ICPTES) followed by the subsequent hydrolysis and condensation in the presence of Eu3+ (Tb3+) via sol-gel method, which were characterized by FT-IR, XRD, fluorescence excitation and emission spectra. The as-formed OMSX shows a strong blue emission with the maximum excitation and emission wavelength at 351 and 420 nm, respectively. Due to the spectral overlap between the emission band of OMSX and f-f absorption lines of Eu3+ and Tb3+ in the UV-blue region, an energy transfer was observed from OMSX host to Eu3+ and Tb3+ in OMSX/Eu3+ and OMSX/Tb3+, respectively. Excitation at 350-360 nm resulted in a very weak emission around 420 nm from OMSX host and strong emission of Eu3+ and Tb3+ in OMSX/Eu3+ and OMSX/Tb3+, respectively. The emission spectra of Eu3+ and Tb3+ consist of D-5(0)-F-7(J) (J = 0, 1, 2, 3, 4) and D-5(4)-F-7(J) (J = 6, 5, 4, 3), respectively. Furthermore, the predicted structure of OMSX/Eu3+ and OMSX/Tb3+ is presented.
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In this work, we studied the photocatalytic and the structural aspects of silicon wafers doped with Au and Cu submitted to thermal treatment. The materials were obtained by deposition of metals on Si using the sputtering method followed by fast heating method. The photocatalyst materials were characterized by synchrotron-grazing incidence X-ray fluorescence, ultraviolet-visible spectroscopy, X-ray diffraction, and assays of H(2)O(2) degradation. The doping process decreases the optical band gap of materials and the doping with Au causes structural changes. The best photocatalytic activity was found for thermally treated material doped with Au. Theoretical calculations at density functional theory level are in agreement with the experimental data.
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In this work, we studied the photocatalytic and the structural aspects of silicon wafers doped with Au and Cu submitted to thermal treatment. The materials were obtained by deposition of metals on Si using the sputtering method followed by fast heating method. The photocatalyst materials were characterized by synchrotron-grazing incidence X-ray fluorescence, ultraviolet-visible spectroscopy, X-ray diffraction, and assays of H(2)O(2) degradation. The doping process decreases the optical band gap of materials and the doping with Au causes structural changes. The best photocatalytic activity was found for thermally treated material doped with Au. Theoretical calculations at density functional theory level are in agreement with the experimental data.
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Novel folding 8 x 8 matrix switches based on silicon on insulator were demonstrated. In the design, single-mode rib waveguides and multimode interferences are connected by optimized tapered waveguides to reduce the mode coupling loss between the two types of waveguides. The self-aligned method was applied to the key integrated turning mirrors for perfect positions and low loss of them. A mixed etching process including inductively coupled plasma and chemical etching was employed to etch waveguides and mirrors, respectively. The compact size of the device is only 20 x 3.2 mm(2). The switch element with high switching speed and low power consumption is presented in the matrix. The average insertion loss of the matrix is about -21 dB, and the excess loss of one mirror is measured of -1.4 dB. The worst crosstalk is larger than 21 dB. Experimental results illuminate that some of the main characteristics of optical matrix switches are. developed in the modified design, which is in accord with theoretic analyses.
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A novel heavy-metal chalcogenide glass doped with a high dysprosium ion (Dy(3+)) concentration was prepared by the well-established melt-quenching technique from high-purity elements. The results show that when Cadmium (Cd) is introduced into chalcogenide glass, the concentration of Dy(3+) ions doped in GeGaCdS glasses is markedly increased, the thermodynamic performance improves, and the difference between T(g) and T(x) is >120 degrees C. The Vickers microhardness is also modified greatly, about 245 kgf/mm(2). The optical spectra indicate that all absorption and emission bands of Dy(3+) are clearly observed and red-shifted with increasing Dy(3+) concentration.
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In this paper, silica-based transparent organic-inorganic hybrid materials were prepared via the sol-gel process. Tetraethoxysilane (TEOS) and 3-glycidoxypropyltrimethoxysilane (GPTMS) were used as the inorganic and organic precursors, respectively. The terbium complex, Tb(Tfacac)(3)phen (Tfacac = 1,1,1-trifluoroacetylacetone, phen = 1, 10-phenanthroline) was successfully doped into organically modified silicate (ormosil) matrix derived from TEOS and GPTMS, and the luminescent properties of the resultant ormosil composite phosphors [ormosil/Th(Tfacac)(3)phen] were investigated compared with those of the Tb(Tfacac)(3)phen incorporated into SiO2 derived from TEOS (labeled as silica/Tb(Tfacac)(3)phen). Both kinds of the materials show the characteristic green emission of Tb3+ ion. The luminescence behavior of the resultant composite products was dependent on the matrix composition. The optimized lanthanide complex concentration in the ormosil/Tb(Tfacac)(3)phen was increased compared with in silica/Tb(Tfacac)(3)phen. Furthermore, the lifetime of Tb3+ in Tb(Tfacac)(3)phen, silica/Tb(Tfacac)(3)phen and ormosil/Tb(Tfacac)(3)phen follows the sequence: onmosil/Tb(Tfacac)(3)phen>silica/Tb(Tfacac)(3)phen>pure Tb(Tfacac)(3)phen.
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Rare-earth and lead ions (Eu3+, Tb3+, Dy3+, Pb2+) doped Ca2Y8 (SiO4)(6)O-2 and Ca2Gd8(SiO4)(6)O-2 thin films have been dip- coated on silicon and quartz glass substrates through the sol- gel route. X- Ray diffraction (XRD), TG- DTA, scanning electron microscopy (SEM), atomic force microscopy (AFM), FT- IR and luminescence excitation and emission spectra as well as luminescence decays were used to characterize the resulting films. The results of XRD reveal that these films remain amorphous below 700 degreesC, begin to crystallize at 800 degreesC and crystallize completely around 1000 degreesC with an oxyapatite structure. The grain structure of the film can be seen clearly from SEM and AFM micrographs, where particles with various shapes and average size of 250 nm can be resolved. Eu3+ and Tb3+ show their characteristic red (D-5(0)-F-7(2)) and green (D-5(4) - F-7(5)) emission in the films with a quenching concentration of 10 and 6 mol% (of Y3+), respectively. The lifetime and emission intensity of Eu3+ increase with the temperature treatment from 700 to 1100 degreesC, while those of Tb3+ show a maximum at 800 degreesC. Energy transfer phenomena have been observed by activating the oxyapatite film host- lattice Ca2Gd8(SiO4)(6)O-2 with Tb3+ (Dy3+). In addition, Pb2+ can sensitize the Gd3+ sublattice in Ca2Gd8(SiO4)(6)O-2.