Investigations On The Electrical Characteristics Of Certain Semiconductor Films And Polymerized Para-Toluidine Films

The thesis is a report of the attempts made to prepare semiconducting and dielectric thin films and to study their electrical properties. It consists of (i) studies on the preparation and electrical characteristics of compound semiconductor thin films of silver sulphide and ferric hydroxide, and (ii) investigations on the electrical and dielectric properties of plasma polymerized thin films of para-toluidine element

An investigation on the electrical characteristics of antimony trisulphide films and certain metal semiconductor (Sb2S3) contacts

The Thesis consist of the study of the electrical properties of antimony trisulphide films and the electrical behaviour of different metal contacts to antimony trisulphide films. Since the thermal evapouration of the compound antimony trisulphide as such mayresult in nonstoichiometric compound films , sb2s3 films in the present work were mostly prepared by the three temperature method ,keeping the substrate at different temperature ranging from 3031 to 4231 and evapourating antimony and sulphur simultaneously from separate sources.

Nanogravimetric study of lead underpotential deposition on selenium thin films as a semiconductor alloy formation procedure

An electrochemical quartz crystal microbalance Au electrode modified with a Se thin film was used to investigate the electrochemical behavior of lead ad-atoms using underpotential deposition (UPD) conditions. A specific quasi-reversible process was observed during the reduction of Pb2+ on Se thin films in perchloric acid media. The charge density of Pb ad-atoms on Se thin film (46.86 mu C cm(-2)) suggests a recovery of 0.1 monolayers, which is in good agreement with EQCM data. The Se thin film can be successfully alloyed with Pb atoms that are deposited by chronoamperometry using time intervals large enough to allow for diffusion toward the inner Se phase. Linear sweep voltammetry combined with EQCM in perchloric acid was used to characterize the amount of Pb absorbed in the Se thin film. These findings offer a new strategy for alloy formation in semiconductor films using UPD as an effective tool to quantify the exact amount of the incorporated metal.

A novel method for preparing ordered SnO2/TiO2 alternate nanoparticulate films

A novel method using LB films as precursors to prepare pure inorganic ordered film with periodic structure was developed. Surfactant-stabilized SnO2 nanoparticulate organosols and TiO2 nanoparticulate organosols were prepared and used as spreading solutions. Using LB technique, the good film-forming ability of the surfactant-stabilized SnO2 nanoparticles and TiO2 nanoparticles was confirmed by the determination of the pi -A isotherms. The surfactant-stabilized SnO2 and TiO2 nanoparticulate monolayers were fabricated on the water surface and then were transferred to solid substrates (CaF2, quartz, silicon, and so on) alternately, layer-by-layer. Then the as-deposited alternate LB film was treated at different temperatures. The as-deposited alternate LB film and the treated film were characterized by Fourier transform infrared spectroscopy, UV visible spectroscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. The results indicate that our method was successful. The as-deposited alternate LB film formed a periodic structure with a long spacing of 6.5 nm that was composed of SnO2 nanoparticles, TiO2 nanoparticles, and arachidic acid. The treated film composed of SnO2 nanoparticles and TiO2 nanoparticles formed a pure inorganic periodic structure with an ordered distance of 5.4 nm. (C) 2001 Academic Press.

Electrodeposition and characterization of thin selenium films modified with lead ad-atoms

The deposition and characterization of Se films doped with Pb underpotentially deposited (UPD) ad-atoms was studied in this work. The employed experimental techniques were cyclic voltammetry, chronoamperometry, electrochemical impedance spectroscopy, UV-vis spectroscopy and atomic force microscopy. The initial deposition of Se film by chronoamperometry yielded a thin film composed of approximately 700 layers. The Pb UPD on Se was achieved by chronoamperometry in a potential value previously determined in voltammetric experiments. This deposition yielded a deposition charge of approximately 7.5% of the total one. The film resistance altered from 320 Omega cm(2) for Se to 65 Omega cm(2) for the Se/Pb one. Flat band potential values and number of acceptors and donors were also calculated for both films and the values obtained were + 0.95 and -0.51 V for Se and Se/Pb, respectively. The Se coating presented 1.2 x 10(17) cm(3) acceptors while the Se/Pb one presented 3.2 x 10(17) cm(3) donors. The band gap values for both films were 2.4 eV and 1.9 eV, correspondingly. (C) 2008 Elsevier B.V. All rights reserved.

Metal-Organic Semiconductor Nanostructures for Surface-Enhanced Raman Scattering

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

ZnO layers for opto-electronic applications from solution-based and low-temperature processing of an organometallic precursor

As printed and flexible plastic electronic gadgets become increasingly viable today, there is a need to develop materials that suit the fabrication processes involved. Two desirable requirements are solution-processable active materials or precursors and low-temperature processability. In this article, we describe a straightforward method of depositing ZnO films by simple spin coating of an organometallic diethylzinc precursor solution and annealing the resulting film at low temperatures (≤200 °C) without involving any synthetic steps. By controlling the humidity in which annealing is conducted, we are able to adjust the intrinsic doping level and carrier concentration in diethylzinc-derived ZnO. Doped or conducting transport layers are greatly preferable to undoped layers as they enable low-resistance contacts and minimize the potential drops. This ability to controllably realize doped ZnO is a key feature of the fabrication process that we describe in this article. We employ field-effect measurements as a diagnostic tool to measure doping levels and mobilities in ZnO and demonstrate that doped ZnO with high charge carrier concentration is ideal for solar cell applications. Respectable power conversion efficiencies (up to 4.5%) are achieved in inverted solar cells that incorporate diethylzinc-derived ZnO films as the electron transport layer and organic blends as the active material. Extensions of this approach to grow ternary and quaternary films with organometallic precursor chemicals will enable solution based growth of a number of semiconductor films as well as a method to dope them.

Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates

Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. Here we report on results of the heteroepitaxial growth of multi-wafer 3C-SiC films on Si(100) substrates by employing a home-made horizontal hot wall low pressure chemical vapour deposition (HWLPCVD) system which was designed to be have a high-throughput, multi-wafer (3x2-inch) capacity. 3C-SiC film properties of the intra-wafer and the wafer-to-wafer including crystalline morphologies, structures and electronics are characterized systematically. The undoped and the moderate NH3 doped n-type 3C-SiC films with specular surface are grown in the HWLPCVD, thereafter uniformities of intra-wafer thickness and sheet resistance of the 3C-SiC films are obtained to be 6%similar to 7% and 6.7%similar to 8%, respectively, and within a run, the deviations of wafer-to-wafer thickness and sheet resistance are less than 1% and 0.8%, respectively.

Photosensitization of TiO2 nanoparticulate thin film electrodes by CdS nanoparticles

Surface photovoltage spectra (SPS) measurements of TiO2 show that a large surface state density is present on the TiO2 nanoparticles and these surface states can be efficiently decreased by sensitization using US nanoparticles as well as by suitable heat treatment. The photoelectrochemical behavior of the bare TiO2 thin film indicates that the mechanism of photoelectron transport is controlled by the trapping/detrapping properties of surface states within the thin films, The slow photocurrent response upon the illumination can be explained by the trap saturation effect. For a TiO2 nanoparticulate thin film sensitized using US nanoparticles, the slow photocurrent response disappears and the steady-state photocurrent increases drastically, which suggests that photosensitization can decrease the effect of surface states on photocurrent response.

Photodecomposition of ozone sensitised by a film of titanium dioxide on glass

High levels of ozone (typically 850 ppm) are readily decomposed by semiconductor photocatalysis, using a thin film of the semiconductor titanium dioxide (Degussa P25 TiO2) cast on a glass tube, and UVA light, i.e. light of energy greater than that of the bandgap of the semiconductor (ultra-bandgap light); in the absence of this light the thermal decomposition of ozone is relatively slow. The semiconductor films show no evidence of chemical or photochemical wear with repeated use. At high levels of ozone, i.e. 100 ppm less than or equal to [O-3] less than or equal to 1400 ppm, the initial rate of ozone decomposition by semiconductor photocatalysis is independent of [O-3], whereas, at lower ozone concentrations, i.e. 5 ppm less than or equal to [O-3] less than or equal to 100 ppm, the initial rate of ozone photodestruction decreases in a smooth, but non-linear, manner with decreasing [O-3]. The kinetics of ozone photodecomposition fit a Langmuir-Hinshelwood type kinetic equation and the possible mechanistic implications of these results are briefly discussed. (C) 2002 Elsevier Science B.V. All rights reserved.

Filmes nanométricos de FeN e ALN crescidos por sputtering e aplicações do efeito peltier

This study will show the capability of the reactive/nonreactive sputtering (dc/rf) technique at low power for the growth of nanometric thin films from magnetic materials (FeN) and widegap semiconductors (AlN), as well as the technological application of the Peltier effect using commercial modules of bismuth telluride (Bi2Te3). Of great technological interest to the high-density magnetic recording industry, the FeN system represents one of the most important magnetic achievements; however, diversity of the phases formed makes it difficult to control its magnetic properties during production of devices. We investigated the variation in these properties using ferromagnetic resonance, MOKE and atomic force microscopy (AFM), as a function of nitrogen concentration in the reactive gas mixture. Aluminum nitride, a component of widegap semiconductors and of considerable interest to the electronic and optoelectronic industry, was grown on nanometric thin film for the first time, with good structural quality by non-reactive rf sputtering of a pure AlN target at low power (≈ 50W). Another finding in this study is that a long deposition time for this material may lead to film contamination by materials adsorbed into deposition chamber walls. Energy-dispersive X-ray (EDX) analysis shows that the presence of magnetic contaminants from previous depositions results in grown AlN semiconductor films exhibiting magnetoresistance with high resistivity. The Peltier effect applied to commercially available compact refrigeration cells, which are efficient for cooling small volumes, was used to manufacture a technologically innovative refrigerated mini wine cooler, for which a patent was duly registered

Caracterização de filmes finos de ZnO dopados com Al e Mn depositados em substrato vítreo pelo método de Spray Pirólise

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Preparação e caracterização estrutural e elétrica de células solares sensibilizadas por corantes empregando anodos nanoestruturados à base de 'TiO IND. 2'

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Investigação da condução elétrica em fitas duplas de dna imobilizadas em eletrodos de ouro por medidas eletroquímicas

Pós-graduação em Química - IQ