Caratterizzazione della superficie di array di nanofili di silicio

Nel primo capitolo viene introdotto lo studio eff�ettuato e descritto un metodo di misure successivo alla caratterizzazione della super�ficie. Nel secondo capitolo vengono descritti i campioni analizzati e, nello speci�fico, la crescita attraverso MaCE dei nanofi�li di silicio. Nel terzo capitolo viene descritto lo strumento AFM utilizzato e la teoria della caratterizzazione alla base dello studio condotto. Nella quarta sezione vengono descritti i risultati ottenuti mentre nelle conclusioni viene tratto il risultato dei valori ottenuti di RMS roughness e roughness exponent.

Changing the size and shape of Ge island by chemical etching

Self-assembled Ge islands were grown on Si (1 0 0) substrate by Si2H6-Ge molecular beam epitaxy. Subjected to a chemical etching, it is found that the size and shape (i.e. ratio of height to base width) of Ge islands change with etching time. In addition, the photoluminescence from the etched Ge islands shifted to the higher energy side compared to that of the as-deposited Ge islands. Our results demonstrated that chemical etching can be a way to change the size and shape of the as-deposited islands as well as their luminescence property. (C) 2001 Elsevier Science B.V. All rights reserved.

Liquid core fibre Bragg grating based refractive index sensor formed by femtosecond assisted chemical etching technique

We report the fabrication of a refractive index (RI) sensor based on a liquid core fibre Bragg grating (FBG). A micro-slot FBG was created in standard telecom optical fibre employing the tightly focused femtosecond laser inscription aided chemical etching. A micro-slot with dimensions of 5.74(h) × 125(w) × 1388.72(l) μm was engraved across the whole fibre and along 1mm long FBG which gives advantage of a relatively robust liquid core waveguide. The device performed the refractive index sensitivity up to about 742.72 nm/RIU. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).

Microchanneled chirped fiber Bragg grating formed by femto-second laser aided chemical etching for refractive index and temperature measurements

In this work, a microchanneled chirped fiber Bragg grating (MCFBG) is proposed and fabricated through the femtosecond laser-assisted chemical etching. The microchannel (~550 µm) gives access to the external index liquid, thus inducing refractive index (RI) sensitivity to the structure. In the experiment, the transmission bands induced by the reduced effective index in the microchannel region were used to sense the surrounding RI and temperature changes. The experimental results show good agreement with the theoretical analysis. The proposed MCFBG offers enhanced RI sensitivity without degrading the robustness of the device showing good application potential as bio-chemical sensors.

Microchanneled chirped fiber Bragg grating formed by femto-second laser aided chemical etching for refractive index and temperature measurements

In this work, a microchanneled chirped fiber Bragg grating (MCFBG) is proposed and fabricated through the femtosecond laser-assisted chemical etching. The microchannel (~550 µm) gives access to the external index liquid, thus inducing refractive index (RI) sensitivity to the structure. In the experiment, the transmission bands induced by the reduced effective index in the microchannel region were used to sense the surrounding RI and temperature changes. The experimental results show good agreement with the theoretical analysis. The proposed MCFBG offers enhanced RI sensitivity without degrading the robustness of the device showing good application potential as bio-chemical sensors.

Metal-organic chemical vapour deposition of thin films of cobalt on different substrates: study of microstructure

We have investigated the microstructure of thin films grown by metal-organic chemical vapour deposition using a beta-diketonate complex of cobalt, namely cobalt (11) acetylacetonate. Films were deposited on three different substrates: Si(100), thermally oxidised silicon [SiO2/Si(100)] and glass at the same time. As-grown films were characterised by X-ray diffraction, scanning electron microscopy, scanning tunnelling microscopy, atomic force microscopy and secondary ion mass spectrometry. Electrical resistivity was measured for all the films as a function of temperature. We found that films have very fine grains, resulting in high electrical resistivity Further, film microstructure has a strong dependence on the nature of the substrate and there is diffusion of silicon and oxygen into cobalt from the substrate. (C) 2002 Elsevier Science B.V. All rights reserved.

Structural and optical properties of a-plane ZnO thin films synthesized on γ-LiAlO2 (302) substrates by low pressure metal-organic chemical vapor deposition

Nonpolar a-plane (1120) ZnO thin films have been fabricated on gamma-LiAlO2 (302) substrates via the low-pressure metal-organic chemical vapor deposition. An obvious intensity variation of the E-2 mode in the Raman spectra indicates that there exhibits in-plane optical anisotropy in the a-plane ZnO thin films. Highly-oriented uniform grains of rectangular shape can be seen from the atomic force microscopy images, which mean that the lateral growth rate of the thin films is also anisotropic. It is demonstrated experimentally that a buffer layer deposited at a low temperature (200 degrees C) can improve the structural and optical properties of the epilayer to a large extent. (c) 2007 Elsevier B.V. All rights reserved.

Characterization of m-plane ZnO thin film on gamma-LiAlO2 (100) substrate by metal-organic chemical vapor deposition

Non-polar (1 (1) over bar 00)m-plane ZnO thin film has been prepared on gamma-LiAlO2 (100)substrate via the low pressure metal organic chemical vapor deposition. Obvious intensity variation of the E-2 mode in the polarized Raman spectra and the absorption edge shift in the polarized optical transmission spectra indicate that the m-plane film exhibits optical anisotropy, which have applications in certain optical devices, such as the UV modulator and polarization-dependent beam switch. From the atomic force microscopy images, highly-oriented uniform-sized grains of rectangular shape were observed. (c) 2008 Elsevier B.V. All rights reserved.

Unveiling the morphology of buried In(Ga)As nanostructures by selective wet chemical etching: From quantum dots to quantum rings

The three-dimensional morphology of In(Ga)As nanostructures embedded in a GaAs matrix is investigated by combining atomic force microscopy and removal of the GaAs cap layer by selective wet etching. This method is used to investigate how the morphology of In(Ga)As quantum dots changes upon GaAs capping and subsequent in situ etching with AsBr3. A wave function calculation based on the experimentally determined morphologies suggests that quantum dots transform into quantum rings during in situ etching. (c) 2007 American Institute of Physics.

InN nanoflowers grown by metal organic chemical vapor deposition

Hexangular indium nitride nanoflower pattern is observed from scanning electron microscopy and atomic force microscopy. The sample is grown on c-plane (0001) sapphire by metal organic chemical vapor deposition with intentional introduction of hydrogen gas. With the aid of hydrogen, a stable existence of metallic indium is achieved. This will induce the growth of InN nanoflowers via self-catalysis vapor-liquid-solid (VLS) process. It is found that the VLS process is modulated by the interface kinetics and thermodynamics among the sapphire substrate, indium, and InN, which leads to the special morphology of the authors' InN nanoflower pattern. (c) 2006 American Institute of Physics.

Hetero-epitaxial growth of ZnO films on silicon by low-pressure metal organic chemical vapor deposition

Quality ZnO films were successfully grown on Si(100) substrate by low-pressure metal organic chemical vapor deposition method in temperature range of 300-500 degrees C using DEZn and N2O as precursor and oxygen source respectively. The crystal structure, optical properties and surface morphology of ZnO films were characterized by X-ray diffraction, optical refection and atomic force microscopy technologies. It was demonstrated that the crystalline structure and surface morphology of ZnO films strongly depend on the growth temperature.

Well-controlled preparation of evenly distributed nanoporous HOPG surface via diazonium salt assisted electrochemical etching process

Evenly distributed nanoporous highly oriented pyrolytic graphite (HOPG) surfaces with controllable pore size were successfully prepared via diazonium salt assisted electrochemical etching method. The porous HOPG was investigated by atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS) Raman spectroscopy and X-ray diffraction. The size of these pores can be tuned by manipulating the electrochemical etching time. These porous HOPG substrates also demonstrated the enhanced electrocatalytical behaviour and were employed as benign arena for the immobilization of Ru(bpy)32+ for electrochemiluminescence (ECL) sensing applications.

Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method

LaNiO3 thin films were deposited on SrLaAlO4 (1 0 0) and SrLaAlO4 (0 0 1) single crystal substrates by a chemical solution deposition method and heat-treated in oxygen atmosphere at 700° C in tube oven. Structural, morphological, and electrical properties of the LaNiO 3 thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and electrical resistivity as temperature function (Hall measurements). The X-ray diffraction data indicated good crystallinity and a structural preferential orientation. The LaNiO3 thin films have a very flat surface and no droplet was found on their surfaces. Samples of LaNiO3 grown onto (1 0 0) and (0 0 1) oriented SrLaAlO4 single crystal substrates reveled average grain size by AFM approximately 15-30 nm and 20-35 nm, respectively. Transport characteristics observed were clearly dependent upon the substrate orientation which exhibited a metal-to-insulator transition. The underlying mechanism is a result of competition between the mobility edge and the Fermi energy through the occupation of electron states which in turn is controlled by the disorder level induced by different growth surfaces. © 2013 Elsevier Ltd and Techna Group S.r.l.

Production of carbon nanotubes by PECVD and their applications to supercapacitors

Màster en Nanociència i Nanotecnologia