Tandem-MAG-hitsauksen soveltuvuus isojen levylakanoiden valmistamiseen

Diplomityön tavoitteena oli selvittää tandem-MAG-hitsausmenetelmän soveltuvuus isojen levylakanoiden valmistamiseen. Päätavoitteena oli selvittää suurimmat saavutettavat hitsausnopeudet sekä railonvalmistukselle asetettavat vaatimukset kahdella laivanrakennusteräksellä. Tutkimuksessa käytettiin omia hitsauskokeita ja liitokset testattiin luokitusseurojen vaatimusten mukaisesti. Selvitettiin myös syntyvät hitsausmuodonmuutokset sekä edut ja rajoitukset verrattuna laserhitsaukseen. Lisäksi laadittiin ei-synergiselle pulssihitsauslaitteistolle suuntaa-antava synergiakäyrä tätä sovellusta varten hitsauskokeiden perusteella. Tandem-MAG-hitsaus osoittautui erittäin kilpailukykyiseksi hitsausmenetelmäksi sovelluksessa. Magneettisen puhalluksen havaittiin olevan merkittävä häiriötekijä tällä menetelmällä hitsattaessa.

Possibilities of advanced MAG-welding processes in shipbuilding

In shipbuilding industry welding of primer coated and tack welded steel products cause different issues. Primer coated steel products are commonly used at shipyards to ensure corrosion free storage of products in outdoor conditions. However usage of primer can cause imperfections to welds. To prevent porosity primed steel products are usually welded with tubular welding wires. Tack welds cause commonly interferences in mechanized welding when over welded, which increases costs related to welding due to increased need of preparing and repairing. The aim of this study is to research possibilities of advanced solid wire MAG-welding processes to deal with these two previously mentioned problems. This study concentrates to examine possibilities of MAG-welding, pulse MAG-welding, double pulse MAG-welding, RapidArc and ForceArc processes. Large amount of experiments were made to find out the produced porosity and the ability to over weld tack welds with each process in different circumstances. In welding of primed steel products porosity is caused mainly by hydrogen, CO, CO2, nitrous gases and zinc fumes. It was found in experiments that porosity of MAG-welding can be greatly decreased by using pulse MAG-welding instead. Also reduction of welding speed, usage of air gap and usage of solid wire product with higher amount of alloying elements reduces porosity. Researched advanced MAG-welding processes did not have an improvement into over welding of tack welds. With studied throat thicknesses and welding positions conventional MAG-welding managed better over welding of tack welds than the four studied advanced MAG-welding processes. Studied solid wire MAG-welding processes would be best suited at shipyard for mechanized welding in welding position PB. In welding positions PD and PG tubular welding wires are clearly more productive.

Mesoscale Optoelectronic Design of Wire-Based Photovoltaic and Photoelectrochemical Devices

The overarching theme of this thesis is mesoscale optical and optoelectronic design of photovoltaic and photoelectrochemical devices. In a photovoltaic device, light absorption and charge carrier transport are coupled together on the mesoscale, and in a photoelectrochemical device, light absorption, charge carrier transport, catalysis, and solution species transport are all coupled together on the mesoscale. The work discussed herein demonstrates that simulation-based mesoscale optical and optoelectronic modeling can lead to detailed understanding of the operation and performance of these complex mesostructured devices, serve as a powerful tool for device optimization, and efficiently guide device design and experimental fabrication efforts. In-depth studies of two mesoscale wire-based device designs illustrate these principles—(i) an optoelectronic study of a tandem Si|WO3 microwire photoelectrochemical device, and (ii) an optical study of III-V nanowire arrays.

The study of the monolithic, tandem, Si|WO3 microwire photoelectrochemical device begins with development and validation of an optoelectronic model with experiment. This study capitalizes on synergy between experiment and simulation to demonstrate the model’s predictive power for extractable device voltage and light-limited current density. The developed model is then used to understand the limiting factors of the device and optimize its optoelectronic performance. The results of this work reveal that high fidelity modeling can facilitate unequivocal identification of limiting phenomena, such as parasitic absorption via excitation of a surface plasmon-polariton mode, and quick design optimization, achieving over a 300% enhancement in optoelectronic performance over a nominal design for this device architecture, which would be time-consuming and challenging to do via experiment.

The work on III-V nanowire arrays also starts as a collaboration of experiment and simulation aimed at gaining understanding of unprecedented, experimentally observed absorption enhancements in sparse arrays of vertically-oriented GaAs nanowires. To explain this resonant absorption in periodic arrays of high index semiconductor nanowires, a unified framework that combines a leaky waveguide theory perspective and that of photonic crystals supporting Bloch modes is developed in the context of silicon, using both analytic theory and electromagnetic simulations. This detailed theoretical understanding is then applied to a simulation-based optimization of light absorption in sparse arrays of GaAs nanowires. Near-unity absorption in sparse, 5% fill fraction arrays is demonstrated via tapering of nanowires and multiple wire radii in a single array. Finally, experimental efforts are presented towards fabrication of the optimized array geometries. A hybrid self-catalyzed and selective area MOCVD growth method is used to establish morphology control of GaP nanowire arrays. Similarly, morphology and pattern control of nanowires is demonstrated with ICP-RIE of InP. Optical characterization of the InP nanowire arrays gives proof of principle that tapering and multiple wire radii can lead to near-unity absorption in sparse arrays of InP nanowires.

Sähkögeneraattoriosien hitsauksen tuottavuuden kehittäminen

Hitsauksen tuottavuuteen vaikuttavat hitsausmäärä, käytetyt prosessit ja laatu. Työn teoriaosuudessa tutustutaan hitsauksen tuottavuuteen sekä suunnittelullisesta että valmistuksellisesta näkökulmasta. Hitsauksen laadulliset asiat, kuten laatustandardit ja vaatimukset käydään läpi keskittyen standardin SFS-EN ISO 3834 kattaviin laatuvaatimuksiin. Rikkomaton ja rikkova aineenkoetus ja yleisimmät hitsausvirheet esitetään yleisellä tasolla. Hitsausprosesseista esitetään MIG/MAG- ja MAG-täytelankahitsauksen sekä pulssihitsauksen perusteet. Tässä diplomityössä tutkitaan pulssihitsauksen soveltuvuutta sähkögeneraattorin staattoripaketin eripariliitoksen hitsaukseen ja kykyä parantaa sekä tuottavuutta että laatua. Tutkimus perustuu koehitsauksiin ja niiden perusteella tehtyihin johtopäätöksiin. Lisäksi pohditaan sisätuulettimien hitsauksen kehittämistä ja annetaan kehitysehdotus valmistusprosessista. Koehitsauksien perusteella pulssihitsaus on hyvä prosessiparannus staattoripakettien hitsaukseen. Kohdistettu valokaari ja alhaisempi lämmöntuonti verrattuna perinteiseen MAG-hitsaukseen sekä hitsauksen yksinkertaisuus tuovat etuja eripariliitoksen hitsauksen laatuun. Kustannuslaskelmien myötä hitsausprosessin muutoksen odotetaan tuovan kustannussäästöjä. Hitsauslaadun parantuessa ja jälkityöstön määrän vähentyessä hitsausprosessin muutos on kannattava.

Desenvolvimento de uma EPS especificação de procedimento de soldagem para união de chapas de aço ASTM A131 com processo FCAW

In any welding process is of utmost importance by welders and responsible qualities of the area understand the process and the variables involved in it, in order to have maximum efficiency in welding both in terms of quality as the final cost , never forgetting, of course, the process conditions which the welder or welding operator shall be submitted. Therefore, we sought to understand the variables relevant to the welding process and develop an EPS (Welding Procedure Specification) as ASME IX for cored wire welding process (FCAW Specification AWS) with shielding gas and automated process for base material ASTM a 131, with 5/16 thick, using a single pass weld, for conditions with pre-and post-heating and the destructive testing for verification and analysis of the resulting weld bead

Nd:YAG Laser Welding of 5083 Aluminium Alloy using Filler Wire

High reflectivity and high thermal conductivity, high vapour pressure of alloyingelements as well as low liquid surface tension and low ionisation potential, make laser welding of aluminium and its alloys a demanding task.Problems that occur during welding are mainly process instabilities of the keyhole and the melt pool, increased plasma formation above the melt pool and loss of alloying elements. These problems lead to unwanted metallurgical defects like hot cracks and porosity in the weld bead andother problems concerning the shape and appearance of the weld bead. In order to minimise the defects and improve the weld quality, the process and beam parameters need to be carefully adjusted along with a consideration concerning the use of filler wire for the welding process. In this work the welding of 3,0 mm thick grade 5083 aluminium alloy plates using a 3,0 kW Nd:YAG laser with grade 5183 filler wire addition is investigated. The plates were welded as butt joints with air gap sizes 0,5 mm, 0,7mm and 1,0 mm. The analysis of the weld beads obtained from the weldedsamples showed that the least imperfections were produced with 0,7 mm air gaps at moderate welding speeds. The analysis also covered the calculation of the melting efficiency and the study of the shape of the weld bead. The melting efficiency was on average around 20 % for the melting process of the welded plates. The weld beads showed the characteristic V-shape of a laser weld and retained this shape during the whole series of experiments.

Evaluation of the usability and benefits of twist wire GMAW and FACW narrow gap welding /

"March 1988."

Operator, organizational, field, and depot maintenance manual : welding set, ARC, inert gas shielded, plastic or metal lined gun, for 3/64 in. wire, DC, 115V, (Linde model SWM-9-A) FSN 3431-972-7672.

Includes index.

Organizational maintenance repair parts and special tools lists : welding set, ARC, inert gas shielded, plastic or metal lined gun; for 3/64 in. wire; DC, 115V., (Linde model SWM-9-A) FSN 3431-972-7672.

"May 1970."

Organizational, DS, GS and depot maintenance repair parts and special tools list : welding set, ARC, inert gas shielded, air cooled, metal lined gun for 3/64 in. wire, (Westinghouse model SA-136), FSN 3431-121-5878.

"July 1971."

Operator, organizational, field, and depot maintenance manual : welding set, arc, inert gas shielded, plastic or metal lined gun, for 3/64 in. wire, DC, 115V (Westinghouse model SA-135), FSN 3431-879-9709.

"August 1962."

Operator's, organizational, DS, and GS maintenance manual : welding set, arc, inert gas shielded, air cooled, metal lined gun for 3/64 in. wire (Westinghouse model SA-136), FSN 3431-121-5878.

"August 1969."

Organizational maintenance repair parts and special tools list : welding set, arc, inert gas shielded, plastic or metal lined gun, for 3/64 in. wire, DC, 115V (Westinghouse model SA-135), FSN 3431-879-9709.

Includes index.

Direct and general support and depot maintenance repair parts and special tools lists : welding set, arc, inert gas shielded, plastic or metal lined gun; for 3/64 in. wire; DC, 115V., (Linde model SWM-9-A), FSN 3431-972-7672.

"May 1970."

Junctionless Multiple-Gate Transistors for Analog Applications

This paper presents the evaluation of the analog properties of nMOS junctionless (JL) multigate transistors, comparing their performance with those exhibited by inversion-mode (IM) trigate devices of similar dimensions. The study has been performed for devices operating in saturation as single-transistor amplifiers, and we have considered the dependence of the analog properties on fin width W(fin) and temperature T. Furthermore, this paper aims at providing a physical insight into the analog parameters of JL transistors. For that, in addition to device characterization, 3-D device simulations were performed. It is shown that, depending on gate voltage, JL devices can present both larger Early voltage V(EA) and larger intrinsic voltage gain A(V) than IM devices of similar dimensions. In addition, V(EA) and A(V) are always improved in JL devices when the temperature is increased, whereas they present a maximum value around room temperature for IM transistors.