RELATION BETWEEN THE METASTABILITY OF EL2 AND THE PHOTOSENSITIVITY OF LOCAL VIBRATIONAL-MODES IN SEMIINSULATING GAAS

Recent infrared spectroscpic observations of local vibrational mode absorptions have revealed a number of photosensitive centers in semi-insulating GaAs. They include (OVAs) center which has three modes at 730 cm(-1) (A), 715 cm(-1) (B), and 714 cm(-1) (C), respectively, a suggested NH center related to a line at 983 cm(-1) (X(1)), and centers related to hydrogen, such as (H-O) or (H-N) bonds, corresponding to a group of peaks in the region of 2900-3500 cm(-1). The photosensitivity of various local vibration centers was observed to have similar time dependence under near-infrared illumination and was suggested to be due to their charge-state interconversion. Mainly described in this work is the effect of the 1.25-eV illumination. It is confirmed that this photoinduced kinetic process results from both electron capture and hole capture, which are closely related to the photoionization behavior and metastability of the EL2 center.

Using Fourier transform infrared grazing incidence reflectivity to study local vibrational modes in GaN

Both Fourier transform infrared (FTIR) grazing incidence reflectivity and FTIR transmission methods have been used to study GaN films grown on alpha-Al2O3 (0001) substrates by atmospheric pressure metal-organic chemical vapor deposition and low pressure metal-organic chemical vapor deposition. The results show that in the frequency range from 400 to 3500 cm(-1) the signal-to-noise ratio of the FTIR grazing incidence measurement is far higher than that of the FTIR transmission measurement. Some new vibrational structures appearing in the former measurement have been discussed. The features around 1460 and 1300 cm(-1) are tentatively assigned to scissoring and wagging local vibrational modes of CH2 in GaN, respectively. (C) 1999 American Institute of Physics. [S0021-8979(99)06509-3].

AN ANALYSIS OF CHARGE STATES FOR LOCAL VIBRATIONAL-MODES BY OXYGEN DEFECTS IN SEMI-INSULATING GAAS

The high-resolution spectral measurements for new local vibrational modes near 714 cm-1 due to the oxygen defect in semi-insulating GaAs are analyzed on the basis of a model calculation by self-consistent bond orbital approach. Two charge states of oxygen atom with 1 and 2 extra electrons are assigned to be responsible for these local modes. The observed frequencies are explained by the properties of Ga-O-1 and Ga-O-2 bonds and the calculated cohesive energy indicates that the O-2 state is stable. The results are in good agreement with the kinetic analysis.

Resonant excitation of Mn local vibrational modes in the higher order Raman spectra of nanocrystalline Ga(1-x)Mn(x)N films

The effect of manganese on the vibrational properties of Ga(1-x)Mn(x)N (0 <= x <= 0.18) films has been investigated by Raman scattering using 488.0 and 632.8 nm photon excitations. The first-order transverse and longitudinal optical GaN vibrational bands were observed in the whole composition range using both excitations, while the corresponding overtones, as well as a prominent peak located in 1238 cm(-1) (153.5 meV) were only observed in the Mn-containing films under 488.0 nm excitation. We propose that the peak observed at 1238 cm(-1) is due to resonant Mn local vibrational modes, the excitation process being related to electronic transitions involving the Mn acceptor band.

Hydrogen behavior in GaN epilayers grown by NH3-MBE

Hydrogen behavior in unintentionally doped GaN epilayers on sapphire substrates grown by NH3-MBE is investigated. Firstly, we find by using nuclear reaction analysis (NRA) that with increasing hydrogen concentration the background electron concentration increases, which suggests that there exists a hydrogen-related donor in undoped GaN, Secondly, Fourier transform infrared (FTIR) absorption and X-ray photoelectron spectroscopy (XPS) reveal Further that hydrogen atom is bound to nitrogen atom in GaN with a local vibrational mode at about 3211 cm(-1) Hence, it is presumed that the hydrogen-related complex Ga. . .H-N is a hydrogen-related donor candidate partly responsible for high n-type background commonly observed in GaN films. Finally, Raman spectroscopy results of the epilayers show that ill addition to the expected compressive biaxial strain, in some cases GaN films suffer from serious tensile biaxial strain. This anomalous behavior has been well interpreted in terms of interstitial hydrogen lattice dilation. (C) 2001 Elsevier Science B.V. All rights reserved.

Phonon-induced Raman scattering in GaNAs

The Raman scattering spectra of MBE-grown GaNAs epilayers were investigated. The resonant enhancement of Raman scattering due to the E+ states in the conduction band was observed and the Raman peaks related to the phonons at non-Gamma points of the Brillouin Zone were detected. II was clearly seen that the local vibrational mode induced by nitrogen impurities evolves to the GaN-like lattice phonon mode when the nitrogen content increases. By comparing the Raman spectra measured before and after 850 degreesC rapid thermal annealing, it was tentatively suggested that two weak peaks were induced by the pairing or clustering effect of nitrogen.

Verification of EL2 electronic absorption effect on charge transfer in semi-insulating GaAs

The electronic absorption of EL2 centers has been clarified to be related to the electron acid hole photoionizations, and the transition from its ground state to metastable state, respectively. Under an illumination with a selected photon energy in the near infrared region, these three processes with different optical cross sections will show different kinetics against the illumination time. It has recently been shown that the photosensitivity (measured under 1.25 eV illumination) of the local vibrational mode absorption induced by some deep defect centers in SI-GaAs is a consequence of the electron and hole photoionizations of EL2. This paper directly measures the kinetics of the electronic transition associated with EL2 under 1.25 eV illumination, which implies the expected charge transfer among different charge states of the EL2 center. A calculation based on a simple rate equation model is in good agreement with the experimental results.

Hydrogen behavior in GaN epilayers grown by NH3-MBE

Hydrogen behavior in unintentionally doped GaN epilayers on sapphire substrates grown by NH3-MBE is investigated. Firstly, we find by using nuclear reaction analysis (NRA) that with increasing hydrogen concentration the background electron concentration increases, which suggests that there exists a hydrogen-related donor in undoped GaN, Secondly, Fourier transform infrared (FTIR) absorption and X-ray photoelectron spectroscopy (XPS) reveal Further that hydrogen atom is bound to nitrogen atom in GaN with a local vibrational mode at about 3211 cm(-1) Hence, it is presumed that the hydrogen-related complex Ga. . .H-N is a hydrogen-related donor candidate partly responsible for high n-type background commonly observed in GaN films. Finally, Raman spectroscopy results of the epilayers show that ill addition to the expected compressive biaxial strain, in some cases GaN films suffer from serious tensile biaxial strain. This anomalous behavior has been well interpreted in terms of interstitial hydrogen lattice dilation. (C) 2001 Elsevier Science B.V. All rights reserved.

Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate

We analyze low-temperature Raman and photoluminescence spectra of MBE-grown GaN layers on sapphire. Strong and sharp Raman peaks are observed in the low frequency region. These peaks, which are enhanced by excitation in resonance with yellow luminescence transitions, are attributed to electronic transitions related to shallow donor levels in hexagonal GaN. It is proposed that a low frequency Raman peak at 11.7 meV is caused by a pseudo-local vibration mode related to defects involved in yellow luminescence transitions. The dependence of the photoluminescence spectra on temperature gives additional information about the residual impurities in these GaN layers.

Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate

We analyze low-temperature Raman and photoluminescence spectra of MBE-grown GaN layers on sapphire. Strong and sharp Raman peaks are observed in the low frequency region. These peaks, which are enhanced by excitation in resonance with yellow luminescence transitions, are attributed to electronic transitions related to shallow donor levels in hexagonal GaN. It is proposed that a low frequency Raman peak at 11.7 meV is caused by a pseudo-local vibration mode related to defects involved in yellow luminescence transitions. The dependence of the photoluminescence spectra on temperature gives additional information about the residual impurities in these GaN layers.

Vibrational dynamics and structure of natural feldspars

The present study gives a contribution to the knowledge on the Na-feldspar and plagioclases, extending the database of the Raman spectra of plagioclases with different chemical compositions and structural orders. This information may be used for the future planetary explorations by “rovers”, for the investigation of ceramics nanocrystal materials and for the mineralogical phase identification in sediments. Na-feldspar and plagioclase solid solution have been investigated by Raman spectroscopy in order to determine the relationships between the vibrational changes and the plagioclase crystal chemistry and structure. We focused on the Raman micro-spectroscopy technique, being a non-destructive method, suited for contactless analysis with high spatial resolution. Chemical and structural analyses have been performed on natural samples to test the usefulness of Raman spectroscopy as a tool in the study of the pressure-induced structural deformations, the disordering processes due to change in the Al-Si distribution in the tetrahedral sites and, finally, in the determination of the anorthitic content (Anx) in plagioclase minerals. All the predicted 39 Ag Raman active modes have been identified and assigned to specific patterns of atomic vibrational motion. A detailed comparison between experimental and computed Raman spectra has been performed and previous assignments have been revised, solving some discrepancies reported in recent literature. The ab initio calculation at the hybrid HF/DFT level with the WC1LYP Hamiltonian has proven to give excellent agreement between calculated and experimentally measured Raman wavenumbers and intensities in triclinic minerals. A short digression on the 36 infrared active modes of Na-feldspar has been done too. The identification of all 39 computed Raman modes in the experimentally measured spectra of the fully ordered Na-feldspar, known as low albite, along with the detailed description of each vibrational mode, has been essential to extend the comparative analysis to the high pressure and high temperature structural forms of albite, which reflect the physical–chemical conditions of the hosting rocks. The understanding of feldspar structure response to pressure and temperature is crucial in order to constrain crustal behaviour. The compressional behaviour of the Na-feldspar has been investigated for the first time by Raman spectroscopy. The absence of phase transitions and the occurrence of two secondary compression mechanisms acting at different pressures have been confirmed. Moreover, Raman data suggest that the internal structural changes are confined to a small pressure interval, localized around 6 GPa, not spread out from 4 to 8 GPa as suggested by previous X-rays studies on elasticity. The dominant compression mechanisms act via tetrahedral tilting, while the T-O bond lengths remain nearly constant at moderate compressional regimes. At the spectroscopic level, this leads to the strong pressure dependencies of T-O-T bending modes, as found for the four modes at 478, 508, 578 and 815 cm-1. The Al-Si distribution in the tetrahedral sites affects also the Raman spectrum of Na-feldspar. In particular, peak broadening is more sensitive than peak position to changes in the degree of order. Raman spectroscopy is found to be a good probe for local ordering, in particular being sensitive to the first annealing steps, when the macroscopic order parameter is still high. Even though Raman data are scattered and there are outliers in the estimated values of the degree of order, the average peak linewidths of the Na-feldspar characteristic doublet band, labelled here as υa and υb, as a function of the order parameter Qod show interesting trends: both peak linewidths linearly increase until saturation. From Qod values lower than 0.6, peak broadening is no more affected by the Al-Si distribution. Moreover, the disordering process is found to be heterogeneous. SC-XRD and Raman data have suggested an inter-crystalline inhomogeneity of the samples, i.e., the presence of regions with different defect density on the micrometric scale. Finally, the influence of Ca-Na substitution in the plagioclase Raman spectra has been investigated. Raman spectra have been collected on a series of well characterized natural, low structural plagioclases. The variations of the Raman modes as a function of the chemical composition and the structural order have been determined. The number of the observed Raman bands at each composition gives information about the unit-cell symmetry: moving away from the C1 structures, the number of the Raman bands enhances, as the number of formula units in the unit cell increases. The modification from an “albite-like” Raman spectrum to a more “anorthite-like” spectrum occurs from sample An78 onwards, which coincides with the appearance of c reflections in the diffraction patterns of the samples. The evolution of the Raman bands υa and υb displays two changes in slope at ~An45 and ~An75: the first one occurs between e2 and e1 plagioclases, the latter separates e1 and I1 plagioclases with only b reflections in their diffraction patterns from I1 and P1 samples having b and c reflections too. The first variation represents exactly the e2→e1 phase transitions, whereas the second one corresponds in good approximation to the C1→I1 transition, which has been determined at ~An70 by previous works. The I1→P1 phase transition in the anorthite-rich side of the solid solution is not highlighted in the collected Raman spectra. Variations in peak broadening provide insights into the behaviour of the order parameter on a local scale, suggesting an increase in the structural disorder within the solid solution, as the structures have to incorporate more Al atoms to balance the change from monovalent to divalent cations. All the information acquired on these natural plagioclases has been used to produce a protocol able to give a preliminary estimation of the chemical composition of an unknown plagioclase from its Raman spectrum. Two calibration curves, one for albite-rich plagioclases and the other one for the anorthite-rich plagioclases, have been proposed by relating the peak linewidth of the most intense Raman band υa and the An content. It has been pointed out that the dependence of the composition from the linewidth can be obtained only for low structural plagioclases with a degree of order not far away from the references. The proposed tool has been tested on three mineralogical samples, two of meteoric origin and one of volcanic origin. Chemical compositions by Raman spectroscopy compare well, within an error of about 10%, with those obtained by elemental techniques. Further analyses on plagioclases with unknown composition will be necessary to validate the suggested method and introduce it as routine tool for the determination of the chemical composition from Raman data in planetary missions.

Vibrational spectroscopy and solubility study of the mineral stringhamite CaCuSiO4•H2O

Stringhamite CaCuSiO4·H2O is a hydrated calcium copper silicate and is commonly known as a significant ‘healing’ mineral and is potentially a semi-precious jewel. Stringhamite is a neosilicate with Cu2+ in square planar coordination. Vibrational spectroscopy has been used to characterise the molecular structure of stringhamite. The intense sharp Raman band at 956 cm−1 is assigned to the ν1 (A1g) symmetric stretching vibration. Raman bands at 980, 997, 1061 cm−1 are assigned to the ν3 (A2u, B1g) antisymmetric stretching vibrations. Splitting of the ν3 vibrational mode supports the concept that the stringhamite SiO4 tetrahedron is strongly distorted. The intense bands at 505 and 519 cm−1 and at 570 cm−1 are assigned to the ν2 and ν4 vibrational modes. The question arises as to whether the mineral stringhamite can actually function as a healing mineral. An estimation of the solubility product at pH < 5 shows that the cupric ion can be released. The copper ion is a very powerful antibiological agent and thus the mineral stringhamite may well function as a healing mineral.