998 resultados para laser ceramics


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The spectrum properties of transparent (Nd0.01Y0.94La0.05)(2)O-3 ceramics were investigated. It was found that all absorption bands of (Nd0.01Y0.94La0.05)(2)O-3 ceramics are broadened, of which the full width at half maximum of the peak centered at 804 nm is 8 nm and its absorption cross section is 1.02x10(-20) cm(2). The emission cross section of (Nd0.01Y0.94La0.05)(2)O-3 ceramics located at 1078 nm is 5.71x10(-20) cm(2) and its fluorescent lifetime is 0.214 ms, which are similar to those of 1.0 at. %Nd:Y2O3 ceramics. These indicate that (Nd0.01Y0.94La0.05)(2)O-3 transparent ceramics has excellent spectroscopic properties.

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To facilitate the design of laser host materials with optimized emission properties, detailed structural information at the atomic level is essential, regarding the local bonding environment of the active ions (distribution over distinct lattice sites) and their extent of local clustering as well as their population distribution over separate micro- or nanophases. The present study explores the potential of solid state NMR spectroscopy to provide such understanding for rare-earth doped lead lanthanum zirconate titanate (PLZT) ceramics. As the NMR signals of the paramagnetic dopant species cannot be observed directly, two complementary approaches are utilized: (1) direct observation of diamagnetic mimics using Sc-45 NMR and (2) study of the paramagnetic interaction of the constituent host lattice nuclei with the rare-earth dopant, using Pb-207 NMR lineshape analysis. Sc-45 MAS NMR spectra of scandium-doped PLZT samples unambiguously reveal scandium to be six-coordinated, suggesting that this rare-earth ion substitutes in the B site. Static Pb-207 spin echo NMR spectra of a series of Tm-doped PLZT samples reveal a clear influence of paramagnetic rare-earth dopant concentration on the NMR lineshape. In the latter case high-fidelity spectra can be obtained by spin echo mapping under systematic incrementation of the excitation frequency, benefiting from the signal-to-noise enhancement afforded by spin echo train Fourier transforms. Consistent with XRD data, the Pb-207 NMR lineshape analysis suggests that statistical incorporation into the PLZT lattice occurs at dopant levels of up to 1 wt.% Tm3+, while at higher levels the solubility limit is reached. (C) 2008 Elsevier Masson SAS. All rights reserved.

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采用燃烧法制备了Nd:YSAG粉体,经过成型、素烧,最终在氢气气氛中烧结制备了Nd:YSAG透明陶瓷.测试结果表明,Nd:YSAG透明陶瓷具有荧光谱线较宽,荧光寿命较长的特点.激光实验得到的激光输出,斜率效率为23.6%,输出功率为0.36W,输出激光的谱线分布较宽.

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Transparent polycrystalline MgO and TiO2 codoped Al2O3 ceramics were fabricated by conventional solid-state pressureless processing. The absorption, emission and excitation spectra of ( Mg, Ti : Al2O3 ceramics were measured. Owing to charge compensation of Mg2+, only UV absorption around 250nm was observed due to O2- -> Ti4+ charge transfer transitions (CT) when Ti content was low. As a result, the emission peaks of isolated Ti4+ ion located at 280-290nm and 410-420nm were observed. Besides absorption peak of V, ion, the characteristic absorption peak of V, ion centered at 490nm was observed in Mg, Ti) : Al2O3 ceramics when Ti content was high. The emission spectra of Ti3+, ion in polycrystalline Al2O3 ceramics coincide with that of Ti: Al2O3 single crystal.

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采用传统陶瓷烧结工艺,在无压还原气氛中低温制备了Yb^3+掺杂量高达10%(按摩尔计)的透明性良好的氧化镧钇激光陶瓷,研究了其在室温的吸收光谱、发射光谱以及荧光寿命。结果表明:掺Yb^3+氧化镧钇透明激光陶瓷具有宽的吸收和发射光谱以及长的荧光寿命。吸收峰位于902,942nm和968nm处,吸收截面分别为0.31×10^-20,0.45×10^-20cm^2和0.53×10^-20cm2:主发射峰位于1032nm和1075nm处,发射截面分别为1.05×10^-20cm^2和0.87×10^-20cm ^

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It was first reported the spectral properties of a low-temperature sintered transparent Yb: Y2-2x La-2x O-3 laser ceramics. Yb: Y2-2x La-2x O-3 laser ceramics have broad absorption band and large absorption cross- section of 4.0 x 10(-20) cm(2) at wavelengths 977nm of the highest absorption peak. Its fluorescence lifetime is 1.1 ms, and the emission cross-sections are 1.0 x 10(-20) cm(2) and 0.7 x 10(-20) cm(2) at wavelengths 1033nm and 1077nm, respectively. All the optical properties are similar to those of single crystals.

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采用传统陶瓷烧结工艺,在无压还原气氛下低温制备出透明性良好的掺Yb^3+氧化镧钇透明激光陶瓷,测试了其在室温下的吸收光谱、发射光谱和荧光寿命.结果表明,掺Yb^3+氧化镧钇透明激光陶瓷的吸收系数随着Yb^3+掺杂浓度的增加而增大,最强吸收峰974 nm处的吸收截面为0.90~1.12×10^-20 cm^2;主发射峰1 032 nm和1 075 nm处的发射截面分别为1.05×10^-20 cm^2和0.87×10^-20 cm^2; Yb^3+掺杂浓度为5at.%时荧光寿命为1.38 ms,并随Yb^3

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研究了La2O3对Yb:Y2O3透明陶瓷光谱性能的影响,添加适量La2O3以后,Yb:Y2O3透明陶瓷的吸收峰和发射峰的位置不变,但由于La^3+的离子半径大于Y^3+的离子半径,在Y2O3中引入La^3+离子后,导致Y2O3晶格常数变大,晶场强度变弱,同时降低了Y2O3晶体的有序度,致使发射峰强度有所下降,发射截面变小.过量的№La2O3(x=0.16)造成yb^3+激活离子发射强度明显下降;其荧光寿命在添加La2O3后总体增大45%-60%.

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Directionally solidified Al2O3–Er3Al5O12–ZrO2 eutectic rods were processed using the laser floating zone method at growth rates of 25, 350and 750 mm/h to obtain microstructures with different domain size. The mechanical properties were investigated as a function of the processing rate. The hardness, 15.6 GPa, and the fracture toughness, 4 MPa m1/2, obtained from Vickers indentation at room temperature were practically independent of the size of the eutectic phases. However, the flexural strength increased as the domain size decreased, reaching outstanding strength values close to 3 GPa in the samples grown at 750 mm/h. A high retention of the flexural strength was observed up to 1500 K in the materials processed at 25 and 350 mm/h, while superplastic behaviour was observed at 1700 K in the eutectic rods solidified at the highest rate of 750 mm/h

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Femtosecond-pulsed laser writing of waveguides, a few mm long, is demonstrated; waveguides were written orthogonally to the writing beam inside the bulk of ErIII-doped oxyfluoride glasses at a depth of 160 mum. The writing beam was 795 nm wavelength, 54 fs pulse duration and 11 MHz repetition rate. Tracks were written at pulse energies of 13.1 nJ to 26.1 nJ and sample translational velocity of 10 mmmiddot.s-1 to 28 mmmiddots-1. The influence of translational velocity and pulse energy on the cross-sectional shape and integrity of the written tracks is reported. Tracks tend to be narrower as the pulse energy is lowered or translational velocity decreased. Above 22.9 nJ, pulse energy, tracks tend to crack. The estimated refractive index profile of one track has a maximum increase of refractive index of 0.003 at the centre. These glasses normally form nano-glass-ceramics on heat treatment just above the glass transformation temperature (Tg). Here, a post-fs-writing heat-treatment just above Tg causes nano-ceramming of the glass sample and removes a light-guiding peripheral region of the fs-written tracks suggesting that this region may have been fs-modified by stress alone. Waveguiding at 651 nm and 973 nm wavelengths, and upconversion, are demonstrated in optimally written tracks.

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Femtosecond-pulsed laser writing of waveguides, a few mm long, is demonstrated; waveguides were written orthogonally to the writing beam inside the bulk of ErIII-doped oxyfluoride glasses at a depth of 160 mum. The writing beam was 795 nm wavelength, 54 fs pulse duration and 11 MHz repetition rate. Tracks were written at pulse energies of 13.1 nJ to 26.1 nJ and sample translational velocity of 10 mmmiddot.s-1 to 28 mmmiddots-1. The influence of translational velocity and pulse energy on the cross-sectional shape and integrity of the written tracks is reported. Tracks tend to be narrower as the pulse energy is lowered or translational velocity decreased. Above 22.9 nJ, pulse energy, tracks tend to crack. The estimated refractive index profile of one track has a maximum increase of refractive index of 0.003 at the centre. These glasses normally form nano-glass-ceramics on heat treatment just above the glass transformation temperature (Tg). Here, a post-fs-writing heat-treatment just above Tg causes nano-ceramming of the glass sample and removes a light-guiding peripheral region of the fs-written tracks suggesting that this region may have been fs-modified by stress alone. Waveguiding at 651 nm and 973 nm wavelengths, and upconversion, are demonstrated in optimally written tracks.

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Transparent Ni2+-doped beta-Ga2O3 glass-ceramics were synthesized. The nanocrystal phase in the glass-ceramics was identified to be beta-Ga2O3 and its size was about 3.6 nm. It was confirmed from the absorption spectra that the ligand environment of Ni2+ ions changed from the trigonal bi-pyramid fivefold sites in the as-cast glass to the octahedral sites in the glass-ceramics. The broadband infrared emission centering at 1270 nm with full width at half maximum (FWHM) of more than 250 nm was observed. The fluorescence lifetime was about 1.1 mu s at room temperature. The observed infrared emission could be attributed to the T-3 (2g) (F-3) -> (3)A (2g) (F-3) transition of octahedral Ni2+ ions. It is suggested that the Ni2+-doped transparent beta-Ga2O3 glass-ceramics with broad bandwidth and long lifetime have a potential as a broadband amplification medium.

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We report transparent Ni2+-doped ZnO-Al2O3-SiO2 system glass-ceramics with broadband infrared luminescence. After heat-treatment, ZnAl2O4 crystallite was precipitated in the glasses, and its average size increased with increasing heat-treatment temperature. No infrared emission was detected in the as-prepared glass samples, while broadband infrared luminescence centered at 1310 nm with full width at half maximum (FWHM) of about 300 nm was observed from the glass-ceramics. The peak position of the infrared luminescence showed a blue-shift with increasing heat-treatment temperature, but a red-shift with an increase in NiO concentration. The mechanisms of the observed phenomena were discussed. These glass-ceramics are promising as materials for super broadband optical amplifier and tunable laser. (c) 2006 Elsevier Ltd. All rights reserved.

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Sheet resistance of laser-irradiated Ge2Sb2Te5 thin films prepared by magnetron sputtering was measured by the four-point probe method. With increasing laser power the sheet resistance undergoes an abrupt drop from 10(7) to 10(3) Omega/square at about 580 mW. The abrupt drop in resistance is due to the structural change from amorphous to crystalline state as revealed by X-ray diffraction (XRD) study of the samples around the abrupt change point. Crystallized dots were also formed in the amorphous Ge2Sb2Te5 films by focused short pulse laser-irradiated, the resistivities at the crystallized dots and the non-crystallized area are 3.375 x 10(-3) and 2.725 Omega m, sheet resistance is 3.37 x 10(4) and 2.725 x 10(7) Omega/square respectively, deduced from the I-V Curves that is obtained by conductive atomic force microscope (C-AFM). (C) 2008 Elsevier B.V. All rights reserved.