荧光俘获效应对掺铒氧化物玻璃光谱性质的影响

测试了不同掺杂浓度和样品厚度下掺铒磷酸盐和碲酸盐玻璃的吸收光谱、荧光光谱和荧光寿命，计算了Er^3＋离子在1．53μm处的吸收截面（σa）、发射截面（σe）、自发辐射跃迁概率（Arad）、辐射跃迁寿命（τrad）、以及辐射跃迁量子效率（η）等光谱参数．讨论了荧光俘获效应对掺铒磷酸盐和碲酸盐玻璃光谱性质及光谱参数的影响．结果表明即使在铒离子低掺杂浓度（0．1mol％Er2O3）下，荧光俘获效应也普遍存在于掺铒玻璃材料中，使得荧光寿命（τt）和荧光半高宽（FWHM）随样品的厚度和铒离子掺杂浓度增加而增大，导致

Electro-optical properties of Er-doped SnO2 thin films

Photoconductivity of SnO2 sol-gel films is excited, at low temperature, by using a 266 nm line-fourth harmonic-of a Nd:YAG laser. This line has above bandgap energy and promotes generation of electron-hole pairs, which recombines with oxygen adsorbed at grain boundary. The conductivity increases up to 40 times. After removing the illumination on an undoped SnO2 film, the conductivity remains unchanged, as long as the temperature is kept constant. Adsorbed oxygen ions recombine with photogenerated holes and are continuously evacuated from the system, leaving a net concentration of free electrons into the material, responsible for the increase in the conductivity. For Er doped SnO2, the excitation of conductivity by the laser line has similar behavior, however after removing illumination, the conductivity decreases with exponential-like decay. (C) 2003 Elsevier Ltd. All rights reserved.

Electron trapping of laser-induced carriers in Er-doped SnO2 thin films

In order to investigate optically excited electronic transport in Er-doped SnO2, thin films are excited with the fourth harmonic of an Nd:YAG laser (266nm) at low temperature, yielding conductivity decay when the illumination is removed. Inspection of these electrical characteristics aims knowledge for electroluminescent devices operation. Based on a proposed model where trapping defects present thermally activated cross section, the capture barrier is evaluated as 140, 108, 100 and 148 meV for doped SnO2, thin films with 0.0, 0.05, 0. 10 and 4.0 at% of Er, respectively. The undoped film has vacancy levels as dominating, whereas for doped films. there are two distinct trapping centers: Er3+ substitutional at Sn lattice sites and Er3+ located at grain boundary. (C) 2007 Elsevier Ltd. All rights reserved.

The effect of OH- groups on the spectroscopic properties of erbium-doped tellurite glasses

A series of five different concentration erbium-doped tellurite glasses with various hydroxl groups were prepared. Infrared spectra of glasses were measured. In order to estimate the exact content of OH- groups in samples, various absorption coefficients of the OH- vibration band were analyzed under the different oxygen bubbling times. The absorption spectra of the glasses were measured, and the Judd-Ofelt intensity parameters Omega(i) of samples with the different erbium ions concentration and OH- contents were calculated on the basis of the Judd-Ofelt theory. The peak stimulated emission cross-section of (I13/2 ->I15/2)-I-4-I-4 transition of the samples was finally calculated by using the McCumber theory. The fluorescence spectra of Er3+:I-4(13/2)->I-4(15/2) transition and the lifetime of Er3+:I-4(13/2) level of the samples were measured. The effects of OH- groups on the spectroscopic properties of Er3+ doped samples with the different concentrations were discussed. The results showed that the OH- groups had great influences on the Er3+ lifetime and the fluorescence peak intensity. The OH- group is a main influence factor of fluorescence quenching when the doping concentration of Er2O3 is smaller than 1.0 mol%, but higher after this concentration, the energy transfer of Er3+ ions turns into the main function of the fluorescence quenching. And basically, there is no influence on the other spectroscopic properties (FWHM, absorption spectra, peak stimulated emission cross section, etc.).

1.5 mu m luminescence characteristic of erbium in B, P doped a-SiO : H films

Hydrogenated amorphous silicon films co-doped with oxygen (O), boron (B) and phosphorus (P) were fabricated using PECVD technique. The erbium (Er) implanted samples were annealed in a N-2 ambient by rapid thermal annealing. Strong photoluminescence (PL) spectra of these samples were observed at room temperature. The incorporation of O, B and P could not only enhance the PL intensity but also the thermal annealing temperature of the strongest PL intensity. It seems that the incorporation of B or P can decrease the grain boundary potential barriers thus leading to an easier movement of carriers and a stronger PL intensity. Temperature dependence of PL indicated the thermal quenching of Er-doped hydrogenated amorphous silicon is very weak.

Mechanism on exciton-mediated energy transfer in erbium-doped silicon

Exciton-mediated energy transfer model in Er-doped silicon was presented. The emission intensity is related to optically active Er concentration, lifetime of excited Er3+ ion and spontaneous emission. The thermal quenching of the Er luminescence in Si is caused by thermal ionization of Er-bound exciton complex and nonradiative energy back-transfer processes, which correspond to the activation energy of 6.6 and 47.4 meV, respectively. Er doping in silicon introduces donor states, a large enhancement in the electrical activation of Er (up to two orders of magnitude) is obtained by co-implanting Er with O. It appears that the donor states are the gateway to the optically active Er. (C) 2000 Elsevier Science B.V. All rights reserved.

Mechanism on exciton-mediated energy transfer in erbium-doped silicon

Exciton-mediated energy transfer model in Er-doped silicon was presented. The emission intensity is related to optically active Er concentration, lifetime of excited Er3+ ion and spontaneous emission. The thermal quenching of the Er luminescence in Si is caused by thermal ionization of Er-bound exciton complex and nonradiative energy back-transfer processes, which correspond to the activation energy of 6.6 and 47.4 meV, respectively. Er doping in silicon introduces donor states, a large enhancement in the electrical activation of Er (up to two orders of magnitude) is obtained by co-implanting Er with O. It appears that the donor states are the gateway to the optically active Er. (C) 2000 Elsevier Science B.V. All rights reserved.

Sol-Gel Erbium-Doped Silica-Hafnia Planar and Channel Waveguides

Erbium activated SiO2 -HfO2 planar waveguides, doped with Er3+ concentrations ranging from 0.01 to 4 mol%, were prepared by sol-gel method. The films were deposited on v-SiO2 and silica-on-silicon substrates using dip-coating technique. The waveguides show high densification degree, effective intermingling of the two film components, and uniform surface morphology. The waveguide deposited on silica-on-silicon substrates shows one single propagation mode at 1.5μm, with a confinement coefficient of 0.81 and an attenuation coefficient of 0.8 dB/cm at 632.8nm. Emission in the C-telecommunication band was observed at room temperature for all the samples upon continuouswave excitation at 980 nm or 514.5 nm. The shape of the emission band corresponding to the 4I13/2 → 4I15/2 transition is found to be almost independent both on erbium content and excitation wavelength, with a FWHM between 44 and 48 nm. The 4I13/2 level decay curves presented a single-exponential profile, with a lifetime ranging between 1.1 - 6.6 ms, depending on the erbium concentration. Infrared to visible upconversion luminescence upon continuous-wave excitation at 980 nm was observed for all the samples. Channel waveguide in rib configuration was obtained by etching the active film in order to have a well confined mode at 1.5 μm.

Modeling and optimization of cascaded erbium and holmium doped fluoride fiber lasers

Numerical modeling of cascade erbium-doped and holmium-doped fluoride fiber lasers is presented. Fiber lengths were optimized for cascade lasers that had fixed or free-running wavelengths using all known spectroscopic parameters. The performance of the cascade laser was tested against dopant concentration, energy transfer process, heat generation, output coupling, and pump schemes. The results suggest that the slope efficiencies and thresholds for both transitions increase with increasing Ho3+ or Er3+ concentration with the slope efficiency stabilizing after 1 mol% rare earth doping. The heat generation in the Ho3+-based system is lower compared to the Er 3+-based system at low dopant concentration as a result of the lower rates of multiphonon relaxation. Decreasing the output coupling for the upper (∼3 μm) transition decreases the threshold of the lower transition and the upper transition benefits from decreasing the output coupling for the lower transition for both cascade systems. The highest slope efficiency was achieved under counter-propagating pump conditions. Saturation of the output power occurs at comparatively higher pump power with dilute Er3+ doping compared with heavier doping. Overall, we show that the cascade Ho3+ -doped fluoride laser is the best candidate for high power output because of its higher slope efficiency and lower temperature excursion of the core and no saturation of the output. © 2013 IEEE.

Spatially integrated erbium-doped fiber amplifiers enabling space-division multiplexing

L’augmentation exponentielle de la demande de bande passante pour les communications laisse présager une saturation prochaine de la capacité des réseaux de télécommunications qui devrait se matérialiser au cours de la prochaine décennie. En effet, la théorie de l’information prédit que les effets non linéaires dans les fibres monomodes limite la capacité de transmission de celles-ci et peu de gain à ce niveau peut être espéré des techniques traditionnelles de multiplexage développées et utilisées jusqu’à présent dans les systèmes à haut débit. La dimension spatiale du canal optique est proposée comme un nouveau degré de liberté qui peut être utilisé pour augmenter le nombre de canaux de transmission et, par conséquent, résoudre cette menace de «crise de capacité». Ainsi, inspirée par les techniques micro-ondes, la technique émergente appelée multiplexage spatial (SDM) est une technologie prometteuse pour la création de réseaux optiques de prochaine génération. Pour réaliser le SDM dans les liens de fibres optiques, il faut réexaminer tous les dispositifs intégrés, les équipements et les sous-systèmes. Parmi ces éléments, l’amplificateur optique SDM est critique, en particulier pour les systèmes de transmission pour les longues distances. En raison des excellentes caractéristiques de l’amplificateur à fibre dopée à l’erbium (EDFA) utilisé dans les systèmes actuels de pointe, l’EDFA est à nouveau un candidat de choix pour la mise en œuvre des amplificateurs SDM pratiques. Toutefois, étant donné que le SDM introduit une variation spatiale du champ dans le plan transversal de la fibre, les amplificateurs à fibre dopée à l’erbium spatialement intégrés (SIEDFA) nécessitent une conception soignée. Dans cette thèse, nous examinons tout d’abord les progrès récents du SDM, en particulier les amplificateurs optiques SDM. Ensuite, nous identifions et discutons les principaux enjeux des SIEDFA qui exigent un examen scientifique. Suite à cela, la théorie des EDFA est brièvement présentée et une modélisation numérique pouvant être utilisée pour simuler les SIEDFA est proposée. Sur la base d’un outil de simulation fait maison, nous proposons une nouvelle conception des profils de dopage annulaire des fibres à quelques-modes dopées à l’erbium (ED-FMF) et nous évaluons numériquement la performance d’un amplificateur à un étage, avec fibre à dopage annulaire, à ainsi qu’un amplificateur à double étage pour les communications sur des fibres ne comportant que quelques modes. Par la suite, nous concevons des fibres dopées à l’erbium avec une gaine annulaire et multi-cœurs (ED-MCF). Nous avons évalué numériquement le recouvrement de la pompe avec les multiples cœurs de ces amplificateurs. En plus de la conception, nous fabriquons et caractérisons une fibre multi-cœurs à quelques modes dopées à l’erbium. Nous réalisons la première démonstration des amplificateurs à fibre optique spatialement intégrés incorporant de telles fibres dopées. Enfin, nous présentons les conclusions ainsi que les perspectives de cette recherche. La recherche et le développement des SIEDFA offriront d’énormes avantages non seulement pour les systèmes de transmission future SDM, mais aussi pour les systèmes de transmission monomode sur des fibres standards à un cœur car ils permettent de remplacer plusieurs amplificateurs par un amplificateur intégré.

Enhancing photoactivity of TiO2(B)/anatase core-shell nanofibers by selectively doping cerium ions into the TiO2(B) Core

Cerium ions (Ce3+) can beselectively doped into the TiO2(B) core of TiO2(B)/anatase core–shell nanofibers by means of a simple one-pot hydrothermal treatment of a starting material of hydrogen trititanate (H2Ti3O7) nanofibers. These Ce3+ ions (≈0.202 nm) are located on the (110) lattice planes of the TiO2(B) core in tunnels (width≈0.297 nm). The introduction of Ce3+ ions reduces the defects of the TiO2(B) core by inhibiting the faster growth of (110) lattice planes. More importantly, the redox potential of the Ce3+/Ce4+ couple (E0(Ce3+/Ce4+)=1.715 V versus the normal hydrogen electrode) is more negative than the valence band of TiO2(B). Therefore, once the Ce3+-doped nanofibers are irradiated by UV light, the doped Ce3+ ions in close vicinity to the interface between the TiO2(B) core and anatase nanoshell can efficiently trap the photogenerated holes. This facilitates the migration of holes from the anatase shell and leaves more photogenerated electrons in the anatase nanoshell, which results in a highly efficient separation of photogenerated charges in the anatase nanoshell. Hence, this enhanced charge-separation mechanism accelerates dye degradation and alcohol oxidation processes. The one-pot treatment doping strategy is also used to selectively dope other metal ions with variable oxidation states such as Co2+/3+ and Cu+/2+ ions. The doping substantially improves the photocatalytic activity of the mixed-phase nanofibers. In contrast, the doping of ions with an invariable oxidation state, such as Zn2+, Ca2+, or Mg2+, does not enhance the photoactivity of the mixed-phase nanofibers as the ions could not trap the photogenerated holes.

Hybrid graphene/titania nanocomposite : interface charge transfer, hole doping, and sensitization for visible light response

We demonstrated for the first time by large-scale ab initio calculations that a graphene/titania interface in the ground electronic state forms a charge-transfer complex due to the large difference of work functions between graphene and titania, leading to substantial hole doping in graphene. Interestingly, electrons in the upper valence band can be directly excited from graphene to the conduction band, that is, the 3d orbitals of titania, under visible light irradiation. This should yield well-separated electron−hole pairs, with potentially high photocatalytic or photovoltaic performance in hybrid graphene and titania nanocomposites. Experimental wavelength-dependent photocurrent generation of the graphene/titania photoanode demonstrated noticeable visible light response and evidently verified our ab initio prediction.

The effect of Fe doping on adsorption of CO2/N2within carbon nanotubes : a density functional theory study with dispersion corrections

An ab initio density functional theory (DFT) study with correction for dispersive interactions was performed to study the adsorption of N2 and CO2 inside an (8, 8) single-walled carbon nanotube. We find that the approach of combining DFT and van der Waals correction is very effective for describing the long-range interaction between N2/CO2 and the carbon nanotube (CNT). Surprisingly, exohedral doping of an Fe atom onto the CNT surface will only affect the adsorption energy of the quadrupolar CO2 molecule inside the CNT (20–30%), and not that of molecular N2. Our results suggest the feasibility of enhancement of CO2/N2 separation in CNT-based membranes by using exohedral doping of metal atoms.

First-principle studies of electronic structure and C-doping effect in boron nitride nanoribbon

Structural and electronic properties have been studied for Boron Nitride nanoribbons (BNNR) with both zigzag and armchair shaped edge (Z-BNNR and A-BNNR) by first-principle spin-polarized total energy calculations. We found that the energy band gap of Z-BNNR is indirect and decreases monotonically with the increasing ribbon width, whereas direct energy band gap oscillation was observed for A-BNNRs. Additionally, C-substitution at either single boron or nitrogen atom site in BNNRs could induce spontaneous magnetization. Our results could be potentially useful to design magnetic nano-devices based on BNNRs.