Comparative analysis of triple band S-C-L erbium-doped fibre and semiconductor optical amplifier for CWDM applications
| Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
|---|---|
| Data(s) |
18/10/2012
18/10/2012
2008
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| Resumo |
The authors present a comparative analysis between a triple-band S-C-L erbium-doped fibre amplifier and a commercial semiconductor optical amplifier in a CWDM application scenario. Both technologies were characterised for gain and noise figures from 1480 to 1610 nm (S, C and L bands) and their systemic performances were evaluated in terms of bit error rate measurements for a wide range of optical power levels. GIGA Project (FINEP/FUNTTEL) |
| Identificador |
IET OPTOELECTRONICS, v.2, n.3, p.115-121, 2008 1751-8768 http://producao.usp.br/handle/BDPI/17756 10.1049/iet-opt:20070010 |
| Idioma(s) |
eng |
| Publicador |
INST ENGINEERING TECHNOLOGY-IET |
| Relação |
Iet Optoelectronics |
| Direitos |
restrictedAccess Copyright INST ENGINEERING TECHNOLOGY-IET |
| Palavras-Chave | #Engineering, Electrical & Electronic #Optics #Telecommunications |
| Tipo |
article original article publishedVersion |
