920 resultados para diamond wheels
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Results are reported of the behaviour of the plane tangential grinding process using diamond grinding wheels. Grinding performance is analysed in terms of the wear behaviour of the wheel in the grinding of ceramic. Discussion of the results concentrates on the wear mechanism of the diamond wheel and the process of material removal.
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Surface characterization of 6H-SiC (0001) substrates in indentation and abrasive machining was carried out to investigate microfracture, residual damage, and surface roughness associated with material removal and surface generation. Brittle versus plastic deformation was studied using Vickers indention and nano-indentation. To characterize the abrasive machining response, the 6H-SiC (0001) substrates were ground using diamond wheels with grit sizes of 25, 15 and 7 mum, and then polished with diamond suspensions of 3 and 0.05 mum. It is found that in indentation, there was a scale effect for brittle versus plastic deformation in 6H-SiC substrates. Also, in grinding, the scales of fracture and surface roughness of the substrates decreased with a decrease in diamond grit size. However, in polishing, a reduction in grit size of diamond suspensions gave no significant improvement in surface roughness. Furthermore, the results showed that fracture-free 6H-SiC (0001) surfaces were generated in polishing with the existence of the residual crystal defects, which were associated with the origin of defects in single crystal growth. (C) 2003 Elsevier Ltd. All rights reserved.
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Nas últimas duas décadas, as cerâmicas avançadas têm sido exaustivamente utilizadas em aplicações na indústria devido às suas propriedades de elevada resistência ao desgaste e dureza. Entretanto, ainda se tem um alto custo agregado ao acabamento da peça. Esse acabamento geralmente é feito pelo processo de retificação, único processo economicamente viável que produz superfícies de elevada qualidade e precisão geométrica. Nesse contexto, as empresas vêm buscando a otimização no processo de retificação como, por exemplo, a redução do fluxo de fluido de corte utilizado, o que também visa atender exigências mundiais de preservação ambiental. Desta forma, este projeto pretendeu explorar a técnica da Mínima Quantidade de Lubrificação (MQL) na retificação cilíndrica externa de mergulho em cerâmicas com rebolos diamantados. Foram utilizados dois métodos de refrigeração: o convencional e o MQL, com três avanços de corte para cada caso. Foram usados um bocal convencional e um bocal para o MQL, tendo este um uniformizador de saída do jato. Foram analisadas como variáveis de saída: a emissão acústica, relação G, aspecto da superfície via microscopia eletrônica de varredura (MEV), rugosidade e circularidade. Assim, embora a refrigeração convencional ainda apresente os melhores resultados em comparação com a refrigeração com MQL, esta última pode atender os requisitos necessários para diversas aplicações, em especial quando utilizadas baixas espessuras equivalentes de corte (h eq). Além disso, a técnica de MQL possui a vantagem de gerar um menor impacto ambiental em comparação com a lubrificação convencional, devido ao uso mínimo de fluido de corte cujo descarte é cada vez mais regulamentado e custoso.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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Pós-graduação em Ciência e Tecnologia de Materiais - FC
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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A loose abrasive lapping technology was developed for truing and dressing ultrafine diamond cup wheels for grinding spherical end faces of fibre optic connectors. The relative densities of exposed grits and grit pull-outs measured from wheel surfaces prepared using the loose abrasive lapping and the bonded abrasive dressing were compared. It was found that the lapping method with loose abrasives produced wheel surfaces with more exposed grits and less grit pull-outs, especially for finer grit size wheels. For dressing ultrafine grit size wheels, the particle size of the lapping paste should be smaller than the wheel grit size to achieve a better result. It is also found that the wheels dressed using the lapping method demonstrate an excellent grinding performance. (C) 2004 Elsevier B.V.. All rights reserved.
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Ultraprecision diamond turning was used to evaluate the surface integrity of a carbon nanotube (CNT) composite as a function of the cutting conditions and the percentage of CNT in the epoxy matrix. The effects of cutting conditions on the chip morphology and surface roughness were analysed. The results showed that an increase in the percentage of CNT may influence the mechanism of material removal and consequently improve the quality of the machined surface. When smaller quantities of CNT (0.02 and 0.07 wt %) are present in the matrix, microcracks form within the cutting grooves (perpendicular to the cutting direction). This indicates that the amount of CNT on the epoxy matrix may have a direct influence on the mechanical properties of these materials. Chips removed from the CNT composite samples were analysed by scanning electron microscopy in order to correlate the material removal mechanism and the surface generation process. The area average surface roughness Sa was influenced by the material removal mechanism (Sa ranging from 0.28 to 1.1 mu m).
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Single-point diamond turning of monocrystalline semiconductors is an important field of research within brittle materials machining. Monocrystalline silicon samples with a (100) orientation have been diamond turned under different cutting conditions (feed rate and depth of cut). Micro-Raman spectroscopy and atomic force microscopy have been used to assess structural alterations and surface finish of the samples diamond turned under ductile and brittle modes. It was found that silicon undergoes a phase transformation when machined in the ductile mode. This phase transformation is evidenced by the creation of an amorphous surface layer after machining which has been probed by Raman scattering. Compressive residual stresses are estimated for the machined surface and it is observed that they decrease with an increase in the feed rate and depth of cut. This behaviour has been attributed to the formation of subsurface cracks when the feed rate is higher than or equal to 2.5 mu m/rev. The surface roughness was observed to vary with the feed rate and the depth of cut. An increase in the surface roughness was influenced by microcrack formation when the feed rate reached 5.0 mu m/rev. Furthermore, a high-pressure phase transformation induced by the tool/material interaction and responsible for the ductile response of this typical brittle material is discussed based upon the presented Raman spectra. The application of this machining technology finds use for a wide range of high quality components, for example the creation of a micrometre-range channel for microfluidic devices as well as microlenses used in the infrared spectrum range.
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We carried out a first-principles investigation on the microscopic properties of nickel-related defect centers in diamond. Several configurations, involving substitutional and interstitial nickel impurities, have been considered either in isolated configurations or forming complexes with other defects, such as vacancies and boron and nitrogen dopants. The results, in terms of spin, symmetry, and hyperfine fields, were compared with the available experimental data on electrically active centers in synthetic diamond. Several microscopic models, previously proposed to explain those data, have been confirmed by this investigation, while some models could be discarded. We also provided insights into the microscopic structure of several of those centers.
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The goal of this work is to study and relate electrical and optical properties of diamond-like carbon (DLC) thin films for applications in electronic devices. DLC films were deposited in a reactive RF magnetron sputtering system on p-type silicon and glass substrates. The target was a 99.9999% pure, 6 in. diameter graphite plate and methane was used as processing gas. Eight DLC films were produced for each substrate, varying deposition time, the reactor pressure between 5 mTorr and 10 mTorr while the RF power was applied at 13.56 MHz and varied between 100, 150, 200 and 250W. After deposition, the films were analyzed by I-V and C-V measurements (Cheng et al. (2004) [1]) in order to determine the electric resistivity, photo-current response and dielectric constant, optical transmittance, used to find the optical gap by the Tauc method; and by photoluminescence analysis to determine the photoemission and confirm the optical band gap. These characteristics are compared and the influence of the deposition parameters is discussed. (C) 2011 Published by Elsevier B.V.
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In this work, we have studied the influence of the substrate surface condition on the roughness and the structure of the nanostructured DLC films deposited by high-density plasma chemical vapor deposition Four methods were used to modify the silicon wafers surface before starting the deposition processes of the nanostructured DLC films. micro-diamond powder dispersion, micro-graphite powder dispersion, and roughness generation by wet chemical etching and roughness generation by plasma etching. The reference wafer was only submitted to a chemical cleaning. It was possible to see that the final roughness and the sp(3) hybridization degree (that is related with the structure and chemical composition) strongly depend on the substrate surface conditions The surface roughness was observed by AFM and SEM and the hybridization degree of the DLC films was analyzed by Raman Spectroscopy Thus, the effects of the substrate surface on the DLC film structure were confirmed. These phenomena can be explained by the fact that the locally higher surface energy and the sharp edges may induce local defects promoting the nanostructured characteristics in the DLC films. (C) 2009 Elsevier B.V. All rights reserved.
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In this work, we have studied the influence of the substrate surface condition on the roughness and the structure of the nanostructured DLC films deposited by High Density Plasma Chemical Vapor Deposition. Four methods were used to modify the silicon wafers surface before starting the deposition processes of the nanostructured DLC films: micro-diamond powder dispersion, micro-graphite powder dispersion, and roughness generation by wet chemical etching and roughness generation by plasma etching. The reference wafer was only submitted to a chemical cleaning. It was possible to see that the final roughness and the sp(3) hybridization degree strongly depend on the substrate surface conditions. The surface roughness was observed by AFM and SEM and the hybridization degree of the DLC films was analyzed by Raman Spectroscopy. In these samples, the final roughness and the sp(3) hybridization quantity depend strongly on the substrate surface condition. Thus, the effects of the substrate surface on the DLC film structure were confirmed. These phenomena can be explained by the fact that the locally higher surface energy and the sharp edges may induce local defects promoting the nanostructured characteristics in the DLC films. (C) 2008 Elsevier B.V. All rights reserved.