Electronic properties and hyperfine fields of nickel-related complexes in diamond


Autoria(s): LARICO, R.; JUSTO, J. F.; MACHADO, W. V. M.; ASSALI, L. V. C.
Contribuinte(s)

UNIVERSIDADE DE SÃO PAULO

Data(s)

17/04/2012

17/04/2012

2009

Resumo

We carried out a first-principles investigation on the microscopic properties of nickel-related defect centers in diamond. Several configurations, involving substitutional and interstitial nickel impurities, have been considered either in isolated configurations or forming complexes with other defects, such as vacancies and boron and nitrogen dopants. The results, in terms of spin, symmetry, and hyperfine fields, were compared with the available experimental data on electrically active centers in synthetic diamond. Several microscopic models, previously proposed to explain those data, have been confirmed by this investigation, while some models could be discarded. We also provided insights into the microscopic structure of several of those centers.

Identificador

PHYSICAL REVIEW B, v.79, n.11, 2009

1098-0121

http://producao.usp.br/handle/BDPI/14700

10.1103/PhysRevB.79.115202

http://dx.doi.org/10.1103/PhysRevB.79.115202

Idioma(s)

eng

Publicador

AMER PHYSICAL SOC

Relação

Physical Review B

Direitos

restrictedAccess

Copyright AMER PHYSICAL SOC

Palavras-Chave #ab initio calculations #diamond #doping #hyperfine interactions #impurities #nickel #vacancies (crystal) #PRESSURE SYNTHETIC DIAMOND #CENTERS #EPR #NI #IMPURITIES #SILICON #SEMICONDUCTORS #TRANSITION #RESONANCE #DEFECTS #Physics, Condensed Matter
Tipo

article

original article

publishedVersion