EQCM Investigation of the Electrodeposition of MnO2 and Its Capacitance Behavior

Electro-oxidation of Mn2+ to MnO2 by cyclic voltammetry on gold in acidic (0.1 M H2SO4) and neutral (0.1 M Na2SO4) media was studied using electrochemical quartz-crystal microbalance (EQCM). The cyclic voltammetric behavior of Au is different in these electrolytes. From EQCM data of mass variation during cycling, the rate of electrodeposition of MnO2 is higher in the neutral medium than in the acidic medium. Specific capacitance of MnO2 deposited from the neutral medium is higher than that deposited from the acidic medium owing to different crystallographic structures.

Analyzing hysteresis behavior of capacitance-voltage characteristics of IZO/C₆₀/pentacene/Au diodes with a hole-transport electron-blocking polyterpenol layer by electric-field-induced optical second-harmonic generation measurement

By using electric-field-induced optical second-harmonic generation (EFISHG) measurement, we analyzed hysteresis behavior of capacitance-voltage (C-V) characteristics of IZO/polyterpenol (PT)/C₆₀/pentacene/Au diodes, where PT layer is actively working as a hole-transport electron-blocking layer. The EFISHG measurement verified the presence of interface accumulated charges in the diodes, and showed that a space charge electric field from accumulated excess electrons (holes) that remain at the PT/C₆₀ (C₆₀/pentacene) interface is responsible for the hysteresis loop observed in the C-V characteristics.

Effect of Crystallographic Structure of MnO2 on Its Electrochemical Capacitance Properties

MnO2 is currently under extensive investigations for its capacitance properties. MnO2 crystallizes into several crystallographic structures, namely, α, β, γ, δ, and λ structures. Because these structures differ in the way MnO6 octahedra are interlinked, they possess tunnels or interlayers with gaps of different magnitudes. Because capacitance properties are due to tercalation/deintercalation of protons or cations in MnO2, only some crystallographic structures, which possess sufficient gaps to accommodate these ions, are expected to be useful for capacitance studies. In order to examine the dependence of capacitance on crystal structure, the present study involves preparation of these various crystal phases of MnO2 in nanodimensions and to evaluate their capacitance properties. Results of α-MnO2 prepared by a microemulsion route (α-MnO2(m)) are also used for comparison. Spherical particles of about 50 nm, nanorods of 30−50 nm in diameter, or interlocked fibers of 10−20 nm in diameters are formed, which depend on the crystal structure and the method of preparation. The specific capacitance (SC) measured for MnO2 is found to depend strongly on the crystallographic structure, and it decreases in the following order: α(m) > α δ > γ > λ > β. A SC value of 297 F g-1 is obtained for α-MnO2(m), whereas it is 9 F g-1 for β-MnO2. A wide (4.6 Å) tunnel size and large surface area of α-MnO2(m) are ascribed as favorable factors for its high SC. A large interlayer separation (7 Å) also facilitates insertion of cations in δ-MnO2 resulting in a SC close to 236 F g-1. A narrow tunnel size (1.89 Å) does not allow intercalation of cations into β-MnO2. As a result, it provides a very small SC.

Reverse bias capacitance measurements on copper-doped germanium p-n junctions in the breakdown region

Results of measurements at a high frequency on reverse bias capacitance of copper-doped germanium junctions are reported. Phenomenal increase in capacitance is found in the breakdown region, particularly at low temperatures.

An EQCM Investigation of Electrochemical Precipitation of Mn(OH)(2) and Its Capacitance Behavior

Electrochemical quartz crystal microbalance (EQCM) has been used to study the electrochemical precipitation of Mn(OH)(2) on a Au crystal and its capacitance properties. From the EQCM data, it is inferred that NO3- ions get adsorbed on the Au crystal and then undergo reduction, resulting in an increase in pH near the electrode surface. Precipitation of Mn2+ occurs as Mn(OH)(2), with an increase in mass of the Au crystal. Mn(OH)(2) undergoes oxidation to MnO2, which exhibits electrochemical supercapacitor behavior on subjecting to electrochemical cycling in a Na2SO4 electrolyte. EQCM data indicate mass variations corresponding to surface insertion/extraction of Na+ ions during discharge/charge cycling. (C) 2010 The Electrochemical Society. DOI: 10.1149/1.3479665] All rights reserved.

Effects of Parasitics and Interface Traps on Ballistic Nanowire FET in the Ultimate Quantum Capacitance Limit

In this paper, we focus on the performance of a nanowire field-effect transistor in the ultimate quantum capacitance limit (UQCL) (where only one subband is occupied) in the presence of interface traps (D-it), parasitic capacitance (C-L), and source/drain series resistance (R-s,R-d), using a ballistic transport model and compare the performance with its classical capacitance limit (CCL) counterpart. We discuss four different aspects relevant to the present scenario, namely: 1) gate capacitance; 2) drain-current saturation; 3) subthreshold slope; and 4) scaling performance. To gain physical insights into these effects, we also develop a set of semianalytical equations. The key observations are as follows: 1) A strongly energy-quantized nanowire shows nonmonotonic multiple-peak C-V characteristics due to discrete contributions from individual subbands; 2) the ballistic drain current saturates better in the UQCL than in the CCL, both in the presence and absence of D-it and R-s,R-d; 3) the subthreshold slope does not suffer any relative degradation in the UQCL compared to the CCL, even with Dit and R-s,R-d; 4) the UQCL scaling outperforms the CCL in the ideal condition; and 5) the UQCL scaling is more immune to R-s,R-d, but the presence of D-it and C-L significantly degrades the scaling advantages in the UQCL.

High-frequency capacitance-voltage characteristics of amorphous (undoped)/crystalline silicon heterostructures

A numerical procedure is presented for calculating high-frequency capacitance variation with bias in amorphous (undoped)/crystalline silicon heterojunction. The results of the model calculations using this procedure have been reported, for different p silicon substrates. These have been compared with the corresponding capacitance variations in the other limiting case, in which the heterostructure acts like an MIS structure. The effect of interface states on the capacitance characteristics has also been studied. In the second part, we report the results of 1 MHz capacitance measurements on various amorphous (undoped)/crystalline silicon heterostructures.

A Feature-Based Solution to Forward Problem in Electrical Capacitance Tomography of Conductive Materials

A new feature-based technique is introduced to solve the nonlinear forward problem (FP) of the electrical capacitance tomography with the target application of monitoring the metal fill profile in the lost foam casting process. The new technique is based on combining a linear solution to the FP and a correction factor (CF). The CF is estimated using an artificial neural network (ANN) trained using key features extracted from the metal distribution. The CF adjusts the linear solution of the FP to account for the nonlinear effects caused by the shielding effects of the metal. This approach shows promising results and avoids the curse of dimensionality through the use of features and not the actual metal distribution to train the ANN. The ANN is trained using nine features extracted from the metal distributions as input. The expected sensors readings are generated using ANSYS software. The performance of the ANN for the training and testing data was satisfactory, with an average root-mean-square error equal to 2.2%.

Negative differential capacitance in n-GaN/p-Si heterojunctions

Negative differential capacitance (NDC) has been observed in n-GaN/p-Si heterojunctions grown by plasma assisted molecular beam epitaxy (PAMBE). The NDC is observed at low frequencies 1 and 10 kilohertz (kHz) and disappeared at a higher testing frequency of 100 kHz. The NDC is also studied with temperature and found that it has disappeared above 323 degrees C. Current-Voltage (I-V) characteristics of n-GaN /p-Si heterojunction were measured at different temperatures and are attributed to the space-charge-limited current (SCLC). A simple model involving two quantum states is proposed to explain the observed NDC behavior. (C) 2010 Elsevier Ltd. All rights reserved.

Reversible Insertion of a Trivalent Cation onto MnO2 Leading to Enhanced Capacitance

Supercapacitor properties of MnO2 are studied generally in aqueous alkali metal salt solutions, often in a Na salt solution. During electrochemical discharge-charge processes, Na+ ions from the electrolyte get reversibly inserted/deinserted on the surface of MnO2 particles, which leads to redox reaction between MnOONa and MnO2. In the present study, it has been shown that MnO2 exhibits enhanced capacitance behaviour in a rare earth metal salt solution, namely, La(NO3)(3) solution in comparison with NaNO3 and Mg(NO3)(2) aqueous solutions. The specific capacitance increases with an increase in charge on the solution cation (Na+, Mg2+ and La3+). It is proposed that the number of surface sites for adsorption of cations remains unaltered in all solutions. The surface insertion of cation facilitates the reduction of Mn4+ in MnO2 to Mn3+ equivalent to the charge present on the cation. As the specific capacitance is related to the quantity of charge that is exchanged between the solid MnO2 and the aqueous solution, the trivalent cation (La3+) provides greater specific capacitance than in Mg(NO3)(2) and NaNO3 electrolytes. Accordingly, the number of Mn(IV)/Mn(III) redox pairs involved in the neighbourhood of the adsorption site is one, two and three when Na+, Mg2+ and La3+ ions, respectively, are adsorbed. (C) 2011 The Electrochemical Society. DOI: 10.1149/1.3565177] All rights reserved.