Internal resonance of an L-shaped beam with a limit stop .1. Free vibration

Real-life structures often possess piecewise stiffness because of clearances or interference between subassemblies. Such an aspect can alter a system's fundamental free vibration response and leads to complex mode interaction. The free vibration behaviour of an L-shaped beam with a limit stop is analyzed by using the frequency response function and the incremental harmonic balance method. The presence of multiple internal resonances, which involve interactions among the first five modes and are extremely complex, have been discovered by including higher harmonics in the analysis. The results show that mode interaction may occur if the higher harmonics of a vibration mode are close to the natural frequency of a higher mode. The conditions for the existence of internal resonance are explored, and it is shown that a prerequisite is the presence of bifurcation points in the form of intersecting backbone curves. A method to compute such intersections by using only one harmonic in the free vibration solution is proposed. (C) 1996 Academic Press Limited

Mode-localized displacement sensing

We report the construction of a new class of micromachined displacement sensors that employ the phenomenon of vibration-mode localization for monitoring minute inertial displacements. It is demonstrated both theoretically and experimentally that the eigenstate-shifted output signal of such mode-localized displacement sensors may be as high as 1000 times greater than corresponding resonant-frequency variations that serve as the output in the more traditional vibratory resonant micromechanical displacement/motion sensors. The high parametric sensitivities attainable in such mode-localized displacement sensors, together with their inherent advantages of improved environmental robustness and electrical tunability, suggest an alternative approach in achieving improved sensitivity and stability in high-resolution displacement transduction. © 1992-2012 IEEE.

Optimal and robust modal control of a flexible structure using an active dynamic vibration absorber

This paper is concerned with feedback vibration control of a lightly damped flexible structure that has a large number of well-separated modes. A single active electrical dynamic absorber is used to reduce a particular single vibration mode selectively or multiple modes simultaneously. The absorber is realized electrically by feeding back the structural acceleration at one position to a collocated piezoceramic patch actuator via a controller consisting of one or several second order lowpass filters. A simple analytical method is presented to design a modal control filter that is optimal in that it maximally flattens the mobility frequency response of the target mode, as well as robust in that it works within a prescribed maximum control spillover of 2 dB at all frequencies. Experiments are conducted with a free-free beam to demonstrate its ability to control any single mode optimally and robustly. It is also shown that an active absorber with multiple such filters can effectively control multiple modes simultaneously.

A fundamental numerical and theoretical study for the vibrational properties of nanowires

Based on the molecular dynamics (MD) simulation and the classical Euler-Bernoulli beam theory, a fundamental study of the vibrational performance of the Ag nanowire (NW) is carried out. A comprehensive analysis of the quality (Q)-factor, natural frequency, beat vibration, as well as high vibration mode is presented. Two excitation approaches, i.e., velocity excitation and displacement excitation, have been successfully implemented to achieve the vibration of NWs. Upon these two kinds of excitations, consistent results are obtained, i.e., the increase of the initial excitation amplitude will lead to a decrease to the Q-factor, and moderate plastic deformation could increase the first natural frequency. Meanwhile, the beat vibration driven by a single relatively large excitation or two uniform excitations in both two lateral directions is observed. It is concluded that the nonlinear changing trend of external energy magnitude does not necessarily mean a nonconstant Q-factor. In particular, the first order natural frequency of the Ag NW is observed to decrease with the increase of temperature. Furthermore, comparing with the predictions by Euler- Bernoulli beam theory, the MD simulation provides a larger and smaller first vibration frequencies for the clamped-clamped and clamped-free thin Ag NWs, respectively. Additionally, for thin NWs, the first order natural frequency exhibits a parabolic relationship with the excitation magnitudes. The frequencies of the higher vibration modes tend to be low in comparison to Euler-Bernoulli beam theory predictions. A combined initial excitation is proposed which is capable to drive the NW under a multi-mode vibration and arrows the coexistence of all the following low vibration modes. This work sheds lights on the better understanding of the mechanical properties of NWs and benefits the increasing utilities of NWs in diverse nano-electronic devices.

Vanadium pentoxide nanobelts: One pot synthesis and its lithium storage behavior

In this paper, we report a synthesis, characterization and electrochemical properties of V2O5 nanobelts. V2O5 nanobelts have been prepared via hydrothermal treatment of commercial V2O5 in acidic (HCl/H2SO4) medium at relatively low temperature (160 degrees C). The hydrothermally derived products have been characterized by powder X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), Raman spectroscopy, X-ray photo electron spectroscopy (XPS), UV-Vis spectroscopy, Scanning/Transmission electron microscopy (SEM/TEM). XRD pattern of V2O5 nanobelts show an orthorhombic phase. From the FTIR spectrum, the peak observed at 1018 cm-1 is characteristic of the stretching vibration mode of the terminal vanadyl, V = O. The UV-Vis absorption spectrum of V2O5 nanobelts show maximum absorbance at 430 nm, which was blue-shifted compared to that of bulk V2O5. TEM micrographs reveal that the products consist of nanobelts of 40-200 nm in thickness and several tens of micrometers in length. The electrochemical analysis shows an initial discharge capacity of 360 mAh g-1 and its almost stabilized capacity is reached to 250 mAh g-1 after 55 cycles. A probable reaction mechanism for the formation of orthorhombic V2O5 nanobelts is proposed.

Raman spectra of undoped and uranium doped CaF2 single crystals

Raman scattering experiments for nominally pure and uranium doped CaF2 single crystals were presented. In all crystals, the Raman active T_(2g) vibration mode of CaF2 was observed, whose frequency shift and full-width at half-maximum (FWHM) broadening correspond well with defects and impurities in CaF2 lattice. Additional Raman peaks develop in nominally pure CaF2 with high etch pits density and U^(6+):CaF2 crystals. Part of additional Raman peaks in the experimental results, which are assumed due to vibration modes from F- interstitials and vacancies, are in well agreement with the theoretical predications by employing the Green-function formulation.

Nd：YbVO4晶体的拉曼光谱和荧光光谱研究

用群论的方法计算了Nd：YbVO4晶体的拉曼活性振动模数目，在室温下测得了其极化拉曼谱线，并指认了在不同几何配置下，各振动模式所对应的频率。同时，测得了室温下晶体的吸收谱，得到了中心波长为808am吸收峰的半高宽为12nm，并在J-O理论的基础上计算了晶体的光学参数，其三个晶场参数分别为Ω2=6．88945×10^-20cm^2。Ω4=4．13394×10^-20cm^2、Ω6=4．54503×10^-20cm^2，并由此得到^4F3／2能级的荧光寿命为178．69炉，1062nm处的荧光分支比为48．85％，积分发射截面为2．786710^-18cm^2。分别在808nm、940nm激发下测得晶体室温发射谱，观察到了Nd→Yb以及Nd←Yb间的能量传递现象。

Effects of deposition rates on laser damage threshold of TiO2/SiO2 high reflectors

TiO2 single layers and TiO2/SiO2 high reflectors (HR) are prepared by electron beam evaporation at different TiO2 deposition rates. It is found that the changes of properties of TiO2 films with the increase of rate, such as the increase of refractive index and extinction coefficient and the decrease of physical thickness, lead to the spectrum shift and reflectivity bandwidth broadening of HR together with the increase of absorption and decrease of laser-induced damage threshold. The damages are found of different morphologies: a shallow pit to a seriously delaminated and deep crater, and the different amorphous-to-anatase-to-rutile phase transition processes detected by Raman study. The frequency shift of Raman vibration mode correlates with the strain in. film. Energy dispersive X-ray analysis reveals that impurities and non-stoichiometric defects are two absorption initiations resulting to the laser-induced transformation. (C) 2008 Elsevier B. V. All rights reserved.

Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate

We analyze low-temperature Raman and photoluminescence spectra of MBE-grown GaN layers on sapphire. Strong and sharp Raman peaks are observed in the low frequency region. These peaks, which are enhanced by excitation in resonance with yellow luminescence transitions, are attributed to electronic transitions related to shallow donor levels in hexagonal GaN. It is proposed that a low frequency Raman peak at 11.7 meV is caused by a pseudo-local vibration mode related to defects involved in yellow luminescence transitions. The dependence of the photoluminescence spectra on temperature gives additional information about the residual impurities in these GaN layers.

Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate

We analyze low-temperature Raman and photoluminescence spectra of MBE-grown GaN layers on sapphire. Strong and sharp Raman peaks are observed in the low frequency region. These peaks, which are enhanced by excitation in resonance with yellow luminescence transitions, are attributed to electronic transitions related to shallow donor levels in hexagonal GaN. It is proposed that a low frequency Raman peak at 11.7 meV is caused by a pseudo-local vibration mode related to defects involved in yellow luminescence transitions. The dependence of the photoluminescence spectra on temperature gives additional information about the residual impurities in these GaN layers.

Surface-enhanced Raman scattering of 4-aminothiophenol self-assembled monolayers in sandwich structure with nanoparticle shape dependence: Off-surface plasmon resonance condition

A universal metal-molecule-metal sandwich architecture by the self-assembly of Ag nanoparticles (NPs) and Au NPs of various shapes interconnected with 4-aminothiophenol (4-ATP) molecules was presented. These Ag NPs/4-ATP/Au NPs sandwich structures were characterized by surface enhanced Raman scattering (SERS) using an off-surface plasmon resonance condition. Enhancement factors (EF) on the order of 10(8) for 9b(b(2)) vibration mode were observed for the 4-ATP self-assembled monolayers (SAMs) in such sandwich structures. The factors are 2 orders of magnitude larger than that on the monolayer of Au NPs of various shapes under similar condition. More importantly, remarkable increase in the intensity of b(2) vibrational modes, which is characteristic of the charge transfer (CT) behavior between metal NPs and 4-ATP molecules, was observed in these sandwich structures under 1064 nm excitation. The obtained EF on these sandwich structure for 9b(b(2)) is larger than that for 7a vibration mode by a factor of similar to 10(2), demonstrating the importance of the contribution of the CT mechanism and the CT behavior of metal contacts, which play a significant role in metal-molecule-metal nanosystems.

Surface-enhanced Raman scattering of silver-gold bimetallic nanostructures with hollow interiors

Surface-enhanced Raman scattering (SERS) activity of silver-gold bimetallic nanostructures (a mean diameter of similar to 100 nm) with hollow interiors was checked using p-aminothiophenol (p-ATP) as a probe molecule at both visible light (514.5 nm) and near-infrared (1064 nm) excitation. Evident Raman peaks of p-ATP were clearly observed, indicating the enhancement Raman scattering activity of the hollow nanostructure to p-ATP. The enhancement factors (EF) at the hollow nanostructures were obtained to be as large as (0.8 +/- 0.3)x10(6) and (2.7 +/- 0.5)x10(8) for 7a and 19b (b(2)) vibration mode, respectively, which was 30-40 times larger than that at silver nanoparticles with solid interiors at 514.5 nm excitation. EF values were also obtained at 1064 nm excitation for 7a and b(2)-type vibration mode, which were estimated to be as large as (1.0 +/- 0.3)x10(6) and (0.9 +/- 0.2)x10(7), respectively. The additional EF values by a factor of similar to 10 for b(2)-type band were assumed to be due to the chemical effect. Large electromagnetic EF values were presumed to derive from a strong localized plasmas electromagnetic field existed at the hollow nanostructures.