Design and fabrication of an automated temperature programmed reaction system to evaluate 3-way catalysts Ce1-x-y(La/Y)(x)PtyO2-delta

A completely automated temperature-programmed reaction (TPR) system for carrying out gas-solid catalytic reactions under atmospheric flow conditions is fabricated to study CO and hydrocarbon oxidation, and NO reduction. The system consists of an all-stainless steel UHV system, quadrupole mass spectrometer SX200 (VG Scientific), a tubular furnace and micro-reactor, a temperature controller, a versatile gas handling system, and a data acquisition and analysis system. The performance of the system has been tested under standard experimental conditions for CO oxidation over well-characterized Ce1-x-y(La/Y)(y)O2-delta catalysts. Testing of 3-way catalysis with CO, NO and C2H2 to convert to CO2, N-2 and H2O is done with this catalyst which shows complete removal of pollutants below 325 degrees C. Fixed oxide-ion defects in Pt substituted Ce1-y(La/Y)(y)O2-y/2 show higher catalytic activity than Pt ion-substituted CeO2

Design and fabrication of an automated temperature programmed reaction system to evaluate 3-way catalysts Ce1-x-y(La/Y)(x)PtyO2-delta

A completely automated temperature-programmed reaction (TPR) system for carrying out gas-solid catalytic reactions under atmospheric flow conditions is fabricated to study CO and hydrocarbon oxidation, and NO reduction. The system consists of an all-stainless steel UHV system, quadrupole mass spectrometer SX200 (VG Scientific), a tubular furnace and micro-reactor, a temperature controller, a versatile gas handling system, and a data acquisition and analysis system. The performance of the system has been tested under standard experimental conditions for CO oxidation over well-characterized Ce1-x-y(La/Y)(y)O2-delta catalysts. Testing of 3-way catalysis with CO, NO and C2H2 to convert to CO2, N-2 and H2O is done with this catalyst which shows complete removal of pollutants below 325 degrees C. Fixed oxide-ion defects in Pt substituted Ce1-y(La/Y)(y)O2-y/2 show higher catalytic activity than Pt ion-substituted CeO2.

HIRFL-CSR complex

The construction and commissioning of HIRFL-CSR were finished in 2007. From 2000 to 2005 the subsystem and key devices of CSR were successfully fabricated, such as magnet, power supply, UHV system, e-cooler, electric-static deflector with the septum of 0.1 mm, and the fast-pulse kicker with the rise time of 150 ns. After that the CSR commissioning activities were performed in 2006 and 2007, including the accumulation of those heavy ions of C, Ar, Kr and Xe by the combination of stripping injection (STI) or multiple multi-turn injection (MMI) and e-cooling with a hollow e-beam, wide energy-range synchrotron ramping by changing the RF harmonic-number at mid-energy, the beam stacking in the experimental ring CSRe, the RIBs mass-measurement with the isochronous-mode in CSRe by using the time-of-flight method, and the ion beam slow-extraction from CSRm.

深层治癌束运线极高、超高真空系统

本论文根据已有的设计方案及图纸，验证设计方案的可行性。主要内容如下：第一，根据公式估算深层治癌束运线各段的真空度，并用VAKTRAK程序模拟出压力分布曲线；第二，运用ANSYS程序对烘烤段各真空管道，尤其是盒形真空室（二极铁真空室）进行力学分析，验证设计尺寸是否可行；第三，根据力学分析，确定超薄壁拱形真空管道的波宽和波高，能够满足使用要求。第四，参考德国GSI有关资料，对膜窗材料进行了计算和验证，并成功的运用到实际中去。 目前，深层治癌束运线真空系统已经安装完毕，经过抽空、检漏，各元件均已达到设计要求，非烘烤段的真空度已达标，烘烤段已达到烘烤前应有的真空度，现正在安装烘烤外套及烘烤控制装置

Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system

Type-II SiGe/Si MQWs (Multi-Quantum Wells) and Self-Organized Ge/Si Islands were successfully grown by a homemade ultra-high vacuum/chemical vapor deposition (UHV/CVD) system. Growth characteristics and PL (photoluminescence) spectra at different temperature were measured. It demonstrated that some accumulation of carriers in the islands results in the increase of the integrated PL intensity of island-related at a certain temperature range.

Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system

Type-II SiGe/Si MQWs (Multi-Quantum Wells) and Self-Organized Ge/Si Islands were successfully grown by a homemade ultra-high vacuum/chemical vapor deposition (UHV/CVD) system. Growth characteristics and PL (photoluminescence) spectra at different temperature were measured. It demonstrated that some accumulation of carriers in the islands results in the increase of the integrated PL intensity of island-related at a certain temperature range.

Analysis of distance relay trip regions for EHV and UHV transmission lines

This paper presents comparative evaluation of the distance relay characteristics for UHV and EHV transmission lines. Distance protection relay characteristics for the EHV and UHV systems are developed using Electromagnetic Transients (EMT) program. The variation of ideal trip boundaries for both the systems are presented. Unlike the conventional distance protection relay which uses a lumped parameter model, this paper uses the distributed parameter model. The effect of larger shunt susceptance on the trip boundaries is highlighted. Performance of distance relay with ideal trip boundaries for EHV and UHV lines have been tested for various fault locations and fault resistances. Electromagnetic Transients (EMT) program has been developed considering distributed parameter line model for simulating the test systems. The voltage and current phasors are computed from the signals using an improved full cycle DFT algorithm taking 20 samples per cycle. Two practical transmission systems of Indian power grid, namely 765 kV UHV transmission line and SREB 24-bus 400kV EHV system are used to test the performance of the proposed approach.

Control of switching surges due to energization of 765kV UHV transmission line

Reduction of switching surge over voltages allows an economic design of UHV transmission system with reduced insulation. The various means of switching surge over voltage control with pre-insertion resistors/closing resistors, shunt re-actors and controlled switching are illustrated. The switching surge over voltages during the energization of series compensated line are compared with uncompensated line. An Electromagnetic transients program has been developed for studying the effect of various means of control of switching transients during 765kV UHV transmission line energization. This paper presents the studies carried out on switching surges control in 765kV UHV transmission line energization.

Support vector machine based high speed protection relay for EHV/UHV transmission line

This paper presents a fast and accurate relaying technique for a long 765kv UHV transmission line based on support vector machine. For a long EHV/UHV transmission line with large distributed capacitance, a traditional distance relay which uses a lumped parameter model of the transmission line can cause malfunction of the relay. With a frequency of 1kHz, 1/4th cycle of instantaneous values of currents and voltages of all phases at the relying end are fed to Support Vector Machine(SVM). The SVM detects fault type accurately using 3 milliseconds of post-fault data and reduces the fault clearing time which improves the system stability and power transfer capability. The performance of relaying scheme has been checked with a typical 765kV Indian transmission System which is simulated using the Electromagnetic Transients Program(EMTP) developed by authors in which the distributed parameter line model is used. More than 15,000 different short circuit fault cases are simulated by varying fault location, fault impedance, fault incidence angle and fault type to train the SVM for high speed accurate relaying. Simulation studies have shown that the proposed relay provides fast and accurate protection irrespective of fault location, fault impedance, incidence time of fault and fault type. And also the proposed scheme can be used as augmentation for the existing relaying, particularly for Zone-2, Zone-3 protection.

A surface kinetics model for the growth of Si1-xGex by UHV/CVD using SiH4/CeH4

The surface reaction mechanism of Si1-xGex/Si growth using SiH4 and GeH4 in UHV/CVD system was studied. The saturated adsorption and desorption of SiH4 from Si(1 0 0) surface was investigated with the help of TPD and RHEED, and it was found that all the 4 hydrogen atoms of one SiH4 molecule were adsorbed to the Si surface, which meant that the dissociated adsorption ratio was proportional to 4 power of surface vacancies. The analysis of the reaction of GeH4 was also done. A new surface reaction kinetic model on Si1-xGex/Si epitaxial growth under UHV conditions by SiH4/GeH4 was proposed based on these studies. The predictions of the model were verified by the experimental results. (C) 2000 Elsevier Science B.V. All rights reserved.

Growth of near planar Si0.5Ge0.5 epitaxial layers directly on Si substrate by UHV/CVD at 500℃

The relationship between Ge content of Si1-xGex layers and growth conditions was investigated via UHV/CVD system at relative low temperature of 500℃. Si1-xGex layers were in a metastable state in this case. 10-period strained 3.0 nm- Si0.5Ge0.5/3.4 nm- Si multi quantum wells were obtained directly on Si substrate. Raman Measurement, high resolution electron microscopy and photoluminescence were used to characterize the structural and optical properties. It is found that such relative thick Si0.5Ge0.5/Si multi quantum wells are still near planar and free of dislocations, that makes it exploit applications to electrical and optical devices.