Some properties of indium-tin oxide-films

Thin films of indium-tin oxide have been deposited by DC diode sputtering from an indium-tin alloy target in an argon, hydrogen and oxygen atmosphere. Films with sheet resistance of 11 ohms/square and 80% light transmission have been obtained. The effect of cathode composition and gas mixture on sheet resistance and optical transmission properties of the films have been studied.

Indium tin oxide films prepared via wet chemical route

In this work, indium tin oxide (ITO) films were prepared using a wet chemical route, the Pechini method. This consists of a polyesterification reaction between an alpha-hydroxicarboxylate complex (indium citrate and tin citrate) with a polyalcohol (ethylene glycol) followed by a post annealing at 500 degrees C. A 10 at.% of doping of Sn4+ ions into an In2O3 matrix was successfully achieved through this method. In order to characterize the structure, the morphology as well as the optical and electrical properties of the produced ITO films, they were analyzed using different experimental techniques. The obtained films are highly transparent, exhibiting transmittance of about 85% at 550 nm. They are crystalline with a preferred orientation of [222]. Microscopy discloses that the films are composed of grains of 30 nm average size and 0.63 nm RMS roughness. The films' measured resistivity, mobility and charge carrier concentration were 5.8 x 10(-3) Omega cm, 2.9 cm(2)/V s and -3.5 x 10(20)/cm(3), respectively. While the low mobility value can be related to the small grain size, the charge carrier concentration value can be explained in terms of the high oxygen concentration level resulting from the thermal treatment process performed in air. The experimental conditions are being refined to improve the electrical characteristics of the films while good optical, chemical, structural and morphological qualities already achieved are maintained. (C) 2007 Elsevier B.V. All rights reserved.

Transport and sensors properties of nanostructured antimony-doped tin oxide films

Tin oxide thin films doped with 7 mol% antimony oxide multilayer were prepared by the polymeric precursor method. Morphological characterization revealed films with round-shaped grains, nanometric size (similar to 13 nm), and low roughness. These films display high transmittance (similar to 80%) in the visible range of transmittance spectra, which is desirable for transparent conductive oxide films. Analysis on electrical resistivity versus temperature data showed two different conduction mechanisms toward the temperature range. The gas sensor properties measurement of the thicker thin film revealed good sensibility for the NOx. (c) 2006 Elsevier B.V. All rights reserved.

Densification of Mn-doped tin oxide films by conventional heating and microwave heating treatment

Mn(II) doped SnO2 thin films used for shielding fluoride glasses against corrosion were investigated by x-ray absorption spectroscopy (EXAFS and XANE)S at the Sn and Mn K-edges. The effect of firing treatment on the densification of the films was studied. It has been evidenced a partial change of Mn valence from 2.3 to 2.6 upon heating which is attributed to a change of ratios of two Mn sites: grafted divalent Mn ions at the surface of SnO 2 nanocrystallites and trivalent Mn ions embedded into a substitutional solid solution with Sn. © Physica Scripta 2005.

UV-Ozone Generation from Modified High Intensity Discharge Mercury Vapor Lamps for Treatment of Indium Tin Oxide Films

In a homemade UV-Ozone generator, different ignition tubes extracted from HID mercury vapor lamps were investigated, namely: 80, 125, 250 and 400 watts. The performance of the generator in function of the type of the ignition lamp was monitored by the measurements of the ozone concentration and the temperature increment. The results have shown that the 400 W set up presented the highest ozone production, which was used in the treatment of indium tin oxide (ITO) films. Polymer light emitting diodes were assembled using ITO films, treated for 10, 20 and 30 min, as an anode. The overall results indicate improvement of the threshold voltage (reduction) and electroluminescence of these devices.

Optical and electrical properties of amorphous zinc tin oxide thin films examined for thin film transistor application

Structural, electronic, and optical properties of amorphous and transparent zinc tin oxide films deposited on glass substrates by pulsed laser deposition (PLD) were examined for two chemical compositions of Zn:Sn=1:1 and 2:1 as a function of oxygen partial pressure PO2 used for the film deposition and annealing temperature. Different from a previous report on sputter-deposited films Chiang et al., Appl. Phys. Lett. 86, 013503 2005 , the PLD-deposited films crystallized at a lower temperature 450 °C to give crystalline ZnO and SnO2 phases. The optical band gaps Tauc gaps were 2.80−2.85 eV and almost independent of oxygen PO2 , which are smaller than those of the corresponding crystals 3.35−3.89 eV . Films deposited at low PO2 showed significant subgap absorptions, which were reduced by postthermal annealing. Hall mobility showed steep increases when carrier concentration exceeded threshold values and the threshold value depended on the film chemical composition. The films deposited at low PO2 2 Pa had low carrier concentrations. It is thought that the low PO2 produced high-density oxygen deficiencies and generated electrons, but these electrons were trapped in localized states, which would be observed as the subgap absorptions. Similar effects were observed for 600 °C crystallized films and their resistivities were increased by formation of subgap states due to the reducing high-temperature condition. High carrier concentrations and large mobilities were obtained in an intermediate PO2 region for the as-deposited films.

Preparation of transparent conductive oxide films by activated reactive evaporation

Indium-tin oxide films have been deposited by reactive electron beam evaporation of ln+Sn alloy both in neutral and ionized oxygen environments. A low-energy ion source (fabricated in-house) has been used. Films deposited with neutral oxygen exhibited very low optical transmittance (5% at 550 nm). Highly transparent (85%) and low-resistivity (5 X 10(-4) Omega cm) films have been deposited in ionized oxygen at ambient substrate temperature. Optical and electrical properties of the films have been studied as a function of deposition parameters. (C) 2002 Society of Photo-Optical Instrumentation Engineers.

Characterization of tin oxide based sol-gel coatings on borosilicate glasses by X-ray reflectivity

The X-ray reflectivity technique was applied in the study of tin oxide films deposited by sol-gel dip-coating on borosilicate glasses. The influence of the withdrawal speed and temperature of thermal treatment on the film structure was analyzed. We have compared the thermal evolution of the density and the shrinkage of the films with these properties measured for the monolithic xerogel by helium picnometry and thermomechanical analysis. In agreement with the Landau-Levich model, the layer thickness increases by increasing the withdrawal speed. Nevertheless, it decreases with the increase of the thermal treatment temperature, due to the densification process. The values of apparent density are smaller than the skeletal density, which shows that the films are porous. The comparison between the film and the monolith indicates that shrinkage during firing is anisotropic, occurring essentially perpendicular to the coating surface.

A Method for the Deposition of Transparent Conducting Thin-Films of Tin Oxide

A modified method has been developed for the deposition of transparent semiconducting thin films of tin oxide, involving the chemical vapour phase oxidation of tin iodide. These films show sheet resistances greater than 100 Ω/□ and an average optical transmission in the visible range exceeding 80%. The method avoids uncontrolled contamination, resulting in better reproducibility of the films. The films showed direct and indirect transitions and the possibility of an indirect forbidden transition. X-ray diffraction studies reveal that the films are polycrystalline. The low mobility values of the films have been attributed to the grain boundary scattering effect.

Structural, optical and electrical characteristics of transparent bismuth vanadate films deposited on indium tin oxide coated glass substrates

Bismuth vanadate (BVO) thin films were fabricated on indium tin oxide (ITO) coated glass substrates using pulsed laser ablation technique and investigated their structural, optical and electrical properties. The use of the indium tin oxide coated glass substrate resulted in reducing the leakage current characteristics of crystalline BVO thin films. The X-ray diffraction (XRD) studies confirmed the monophasic nature of the post annealed (500 A degrees C/1 h) films. The atomic force microscopy indicated the homogeneous distribution of crystallites in the as-deposited films. The as-deposited and the post annealed films were almost 90% transparent (380-900 nm) as confirmed by optical transmission studies. Dielectric constant of around 52 was attained accompanied by the low dielectric loss of 0.002 at 10 kHz for post annealed films. The leakage current of the post annealed BVO films on ITO coated glass substrates measured at room temperature was 8.1 x 10(-8) A at an applied electric field of 33 kV/cm, which was lower than that of the films with platinum and SrRuO3 as the bottom electrodes.

Novel mechanism for high speed growth of transparent and conducting tin oxide thin films by spray pyrolysis

A novel mechanism is proposed for efficient manipulation of transport forces acting on the droplets during spray pyrolytic deposition of thin films. A ‘‘burst mode’’ technique of spraying is used to adjust the deposition conditions so as to transport the droplets under the new mechanism. Transparent, conducting thin films of undoped tin oxide prepared by this method showed significant improvement in growth rate. The films are found to be of fairly good quality with optical transmission of 82% and sheet resistance of 35 Ω/☒. The films are chemically homogeneous and grow preferentially along 〈200〉 direction.

Comparison of ZnO films deposited on indium tin oxide and soda lime glass under identical conditions

ZnO films have been grown via a vapour phase transport (VPT) on soda lime glass (SLG) and indium-tin oxide (ITO) coated glass. ZnO film on ITO had traces of Zn and C which gives them a dark appearance while that appears yellowish-white on SLG. X-ray photoelectron spectroscopy studies confirm the traces of C in the form of C-O. The photoluminescence studies reveal a prominent green luminescence band for ZnO film on ITO. (C) 2013 Author(s).

Electrochemistry and electrogenerated chemiluminescence of SiO2 nanoparticles/tris(2,2 '-bipyridyl)ruthenium(II) multilayer films on indium tin oxide electrodes

In this paper, a simple method of preparing {SiO2/Ru-(bPY)(3)(2+)}(n) multilayer films was described. Positively charged tris(2,2'-bipyridyl)ruthenium(II) (Ru(bpy)(3)(2+)) and negatively charged SiO2 nanoparticles were assembled on ITO electrodes by a layer-by-layer method. Electrochemical and electrogenerated chemiluminescence (ECL) behaviors of the {SiO2/Ru(bpy)(3)(2+)}(n) multilayer film-modified electrodes were studied. Cyclic voltammetry, UV-visible spectroscopy, quartz crystal microbalance, and ECL were adopted to monitor the regular growth of the multilayer films. The multilayer films containing Ru(bpy)(3)(2+) was used for ECL determination of TPA, and the sensitivity was more than 1 order of magnitude higher than that observed for previous reported immobilization methods for the determination of TPA. The multilayer films also showed better stability for one month at least. The high sensitivity and stability mainly resulted from the high surface area and special structure of the silica nanoparticles.