Design Of Start-up Power Circuit For Control Power Supplies With Wide Input Voltage Variation

This paper presents the design of a start up power circuit for a control power supply (CPS) which feeds power to the sub-systems of High Power Converters (HPC). The sub-systems such as gate drive card, annunciation card, protection and delay card etc; needs to be provided power for the operation of a HPC. The control power supply (CPS) is designed to operate over a wide range of input voltage from 90Vac to 270Vac. The CPS output supplies power at a desired voltage of Vout =24V to the auxiliary sub-systems of the HPC. During the starting, the power supply to the control circuitry of CPS in turn, is obtained using a separate start-up power supply. This paper discusses the various design issues of the start-up power circuit to ensure that start-up and shut down of the CPS occurs reliably. The CPS also maintains the power factor close to unity and low total harmonic distortion in input current. The paper also provides design details of gate drive circuits employed for the CPS as well as the design of on-board power supply for the CPS. Index terms: control power supply, start-up power supply, DSFC, pre-regulator

Bridgeless interleaved boost PFC converter with variable duty cycle control

This paper proposes a bridgeless boost interleaved PFC (power factor correction) converter with variable duty cycle control. The application of bridgeless technique causes reduction of conduction losses, while the interleaving technique of converters cells allows division of efforts in semiconductor devices and reduction of weight and volume of the input EMI filter. The use of variable duty cycle control has the functions of regulating the output voltage and eliminating the low order harmonic components that appears in the input current of the common interleaved power factor converters working in Discontinuous Conduction Mode (DCM). The simulation results of the proposed converter presented high power factor and a good transient response in relation to the output voltage regulation in presence of high load variations and supply voltage variations. © 2011 IEEE.

Process-variation resilient and voltage-scalable dct architecture for robust low-power computing

In this paper, we present a novel discrete cosine transform (DCT) architecture that allows aggressive voltage scaling for low-power dissipation, even under process parameter variations with minimal overhead as opposed to existing techniques. Under a scaled supply voltage and/or variations in process parameters, any possible delay errors appear only from the long paths that are designed to be less contributive to output quality. The proposed architecture allows a graceful degradation in the peak SNR (PSNR) under aggressive voltage scaling as well as extreme process variations. Results show that even under large process variations (±3σ around mean threshold voltage) and aggressive supply voltage scaling (at 0.88 V, while the nominal voltage is 1.2 V for a 90-nm technology), there is a gradual degradation of image quality with considerable power savings (71% at PSNR of 23.4 dB) for the proposed architecture, when compared to existing implementations in a 90-nm process technology. © 2006 IEEE.

Voltage and Temperature-Aware SSTA Using Neural Network Delay Model

With the emergence of voltage scaling as one of the most powerful power reduction techniques, it has been important to support voltage scalable statistical static timing analysis (SSTA) in deep submicrometer process nodes. In this paper, we propose a single delay model of logic gate using neural network which comprehensively captures process, voltage, and temperature variation along with input slew and output load. The number of simulation programs with integrated circuit emphasis (SPICE) required to create this model over a large voltage and temperature range is found to be modest and 4x less than that required for a conventional table-based approach with comparable accuracy. We show how the model can be used to derive sensitivities required for linear SSTA for an arbitrary voltage and temperature. Our experimentation on ISCAS 85 benchmarks across a voltage range of 0.9-1.1V shows that the average error in mean delay is less than 1.08% and average error in standard deviation is less than 2.85%. The errors in predicting the 99% and 1% probability point are 1.31% and 1%, respectively, with respect to SPICE. The two potential applications of voltage-aware SSTA have been presented, i.e., one for improving the accuracy of timing analysis by considering instance-specific voltage drops in power grids and the other for determining optimum supply voltage for target yield for dynamic voltage scaling applications.

Dynamic Supply and Threshold Voltage Scaling for CMOS Digital Circuits Using In-Situ Power Monitor

A generalized power tracking algorithm that minimizes power consumption of digital circuits by dynamic control of supply voltage and the body bias is proposed. A direct power monitoring scheme is proposed that does not need any replica and hence can sense total power consumed by load circuit across process, voltage, and temperature corners. Design details and performance of power monitor and tracking algorithm are examined by a simulation framework developed using UMC 90-nm CMOS triple well process. The proposed algorithm with direct power monitor achieves a power savings of 42.2% for activity of 0.02 and 22.4% for activity of 0.04. Experimental results from test chip fabricated in AMS 350 nm process shows power savings of 46.3% and 65% for load circuit operating in super threshold and near sub-threshold region, respectively. Measured resolution of power monitor is around 0.25 mV and it has a power overhead of 2.2% of die power. Issues with loop convergence and design tradeoff for power monitor are also discussed in this paper.

Dynamic Supply and Threshold Voltage Scaling for CMOS Digital Circuits Using In-Situ Power Monitor

A generalized power tracking algorithm that minimizes power consumption of digital circuits by dynamic control of supply voltage and the body bias is proposed. A direct power monitoring scheme is proposed that does not need any replica and hence can sense total power consumed by load circuit across process, voltage, and temperature corners. Design details and performance of power monitor and tracking algorithm are examined by a simulation framework developed using UMC 90-nm CMOS triple well process. The proposed algorithm with direct power monitor achieves a power savings of 42.2% for activity of 0.02 and 22.4% for activity of 0.04. Experimental results from test chip fabricated in AMS 350 nm process shows power savings of 46.3% and 65% for load circuit operating in super threshold and near sub-threshold region, respectively. Measured resolution of power monitor is around 0.25 mV and it has a power overhead of 2.2% of die power. Issues with loop convergence and design tradeoff for power monitor are also discussed in this paper.

Process variation tolerant low power DCT architecture

2-D Discrete Cosine Transform (DCT) is widely used as the core of digital image and video compression. In this paper, we present a novel DCT architecture that allows aggressive voltage scaling by exploiting the fact that not all intermediate computations are equally important in a DCT system to obtain "good" image quality with Peak Signal to Noise Ratio(PSNR) > 30 dB. This observation has led us to propose a DCT architecture where the signal paths that are less contributive to PSNR improvement are designed to be longer than the paths that are more contributive to PSNR improvement. It should also be noted that robustness with respect to parameter variations and low power operation typically impose contradictory requirements in terms of architecture design. However, the proposed architecture lends itself to aggressive voltage scaling for low-power dissipation even under process parameter variations. Under a scaled supply voltage and/or variations in process parameters, any possible delay errors would only appear from the long paths that are less contributive towards PSNR improvement, providing large improvement in power dissipation with small PSNR degradation. Results show that even under large process variation and supply voltage scaling (0.8V), there is a gradual degradation of image quality with considerable power savings (62.8%) for the proposed architecture when compared to existing implementations in 70 nm process technology.

Logic and Memory Design Based on Unequal Error Protection for Voltage-scalable, Robust and Adaptive DSP Systems

In this paper, we propose a system level design approach considering voltage over-scaling (VOS) that achieves error resiliency using unequal error protection of different computation elements, while incurring minor quality degradation. Depending on user specifications and severity of process variations/channel noise, the degree of VOS in each block of the system is adaptively tuned to ensure minimum system power while providing "just-the-right" amount of quality and robustness. This is achieved, by taking into consideration block level interactions and ensuring that under any change of operating conditions, only the "less-crucial" computations, that contribute less to block/system output quality, are affected. The proposed approach applies unequal error protection to various blocks of a system-logic and memory-and spans multiple layers of design hierarchy-algorithm, architecture and circuit. The design methodology when applied to a multimedia subsystem shows large power benefits ( up to 69% improvement in power consumption) at reasonable image quality while tolerating errors introduced due to VOS, process variations, and channel noise.

Design of a capacitor supported dynamic voltage restorer (DVR) for unbalanced and distorted loads

The paper discusses the operating principles and control characteristics of a dynamic voltage restorer (DVR) that protects sensitive but unbalanced and/or distorted loads. The main aim of the DVR is to regulate the voltage at the load terminal irrespective of sag/swell, distortion, or unbalance in the supply voltage. In this paper, the DVR is operated in such a fashion that it does not supply or absorb any active power during the steady-state operation. Hence, a DC capacitor rather than a DC source can supply the voltage source inverter realizing the DVR. The proposed DVR operation is verified through extensive digital computer simulation studies.

Concept of "Crossover Point" and its Application on Threshold Voltage Definition for Undoped-Body Transistors

As the conventional MOSFET's scaling is approaching the limit imposed by short channel effects, Double Gate (DG) MOS transistors are appearing as the most feasible candidate in terms of technology in sub-45nm technology nodes. As the short channel effect in DG transistor is controlled by the device geometry, undoped or lightly doped body is used to sustain the channel. There exits a disparity in threshold voltage calculation criteria of undoped-body symmetric double gate transistors which uses two definitions, one is potential based and the another is charge based definition. In this paper, a novel concept of "crossover point'' is introduced, which proves that the charge-based definition is more accurate than the potential based definition.The change in threshold voltage with body thickness variation for a fixed channel length is anomalous as predicted by potential based definition while it is monotonous for charge based definition.The threshold voltage is then extracted from drain currant versus gate voltage characteristics using linear extrapolation and "Third Derivative of Drain-Source Current'' method or simply "TD'' method. The trend of threshold voltage variation is found same in both the cases which support charge-based definition.

Concept of Crossover point and its application on Threshold Voltage definition for Undoped-Body Transistors

As the conventional MOSFETs scaling is approaching the limit imposed by short channel effects, Double Gate (DG) MOS transistors are appearing as the most feasible andidate in terms of technology in sub-45nm technology nodes. As the short channel effect in DG transistor is controlled by the device geometry, undoped or lightly doped body, is used to sustain the channel. There exits a disparity in threshold voltage calculation criteria of undoped-body symmetric double gate transistors which uses two definitions, one is potential based and the another is charge based definition. In this paper, a novel concept of "crossover point" is introduced, which proves that the charge-based definition is more accurate than the potential based definition. The change in threshold voltage with body thickness variation for a fixed channel length is anomalous as predicted by, potential based definition while it is monotonous for change based definition. The threshold voltage is then extracted from drain currant versus gate voltage characteristics using linear extrapolation and "Third Derivative of Drain-Source Current" method or simply "TD" method. The trend of threshold voltage variation is found some in both the cases which support charge-based definition.

Justifying threshold voltage definition for undoped body transistors through ``crossover point'' concept

Two different definitions, one is potential based and the other is charge based, are used in the literatures to define the threshold voltage of undoped body symmetric double gate transistors. This paper, by introducing a novel concept of crossover point, proves that the charge based definition is more accurate than the potential based definition. It is shown that for a given channel length the potential based definition predicts anomalous change in threshold voltage with body thickness variation while the charge based definition results in monotonous change. The threshold voltage is then extracted from drain current versus gate voltage characteristics using linear extrapolation, transconductance and match-point methods. In all the three cases it is found that trend of threshold voltage variation support the charge based definition.

Three-level inverter fed open-end winding IM drive with common mode voltage elimination and reduced power device count

A three-level space phasor generation scheme with common mode elimination and with reduced power device count is proposed for an open end winding induction motor in this paper. The open end winding induction motor is fed by the three-level inverters from both sides. Each two level inverter is formed by cascading two two-level inverters. By sharing the bottom inverter for the two three-level inverters on either side, the power device count is reduced. The switching states with zero common mode voltage variation are selected for PWM switching so that there is no alternating common mode voltage in the pole voltages as well as in phase voltages. Only two isolated DC-links, with half the voltage rating of a conventional three-level neutral point clamped inverter, are needed for the proposed scheme.

Elimination of common mode voltage and fifth and seventh harmonics in a multilevel inverter fed IM drive using 12-sided polygonal voltage spacephasor

A multilevel inverter with 12-sided polygonal voltage space vector structure is proposed in this paper. The present scheme provides elimination of common mode voltage variation and 5(th) and 7(th) order harmonics in the entire operating range of the drive. The proposed multi level structure is achieved by cascading only the conventional two-level inverters with asymmetrical DC link voltages. The bandwidths problems associated with conventional hexagonal voltage space vector structure current controllers, due to the presence of 5(th) and 7(th) harmonics, in the over modulation region, is absent in the present 12-sided structure. So a linear voltage control up to 12-step operation is possible, from the present twelve sided scheme, with less current control complexity. An open-end winding structure is used for the induction motor drive.