991 resultados para Strong electron-phonon coupling.
Resumo:
We show that electron-phonon coupling strongly affects transport properties of the Luttinger liquid hybridized with a resonant level. Namely, this coupling significantly modifies the effective energy-dependent width of the resonant level in two different geometries, corresponding to the resonant or antiresonant transmission in the Fermi gas. This leads to a rich phase diagram for a metal-insulator transition induced by the hybridization with the resonant level.
Resumo:
We study the influence of electron-phonon coupling on electron transport through a Luttinger liquid with an embedded weak scatterer or weak link. We derive the renormalization group (RG) equations, which indicate that the directions of RG flows can change upon varying either the relative strength of the electron-electron and electron-phonon coupling or the ratio of Fermi to sound velocities. This results in a rich phase diagram with up to three fixed points: an unstable one with a finite value of conductance and two stable ones, corresponding to an ideal metal or insulator.
Resumo:
We study the influence of electron-phonon coupling on electron transport through a Luttinger liquid with an embedded weak scatterer or weak link. We derive the renormalization group (RG) equations which indicate that the directions of RG flows can change upon varying either the relative strength of the electron-electron and electron-phonon coupling or the ratio of Fermi to sound velocities. This results in the rich phase diagram with up to three fixed points: an unstable one with a finite value of conductance and two stable ones, corresponding to an ideal metal or insulator.
Resumo:
First-principles electronic structure methods are used to predict the mobility of n-type carrier scattering in strained SiGe. We consider the effects of strain on the electron-phonon deformation potentials and the alloy scattering parameters. We calculate the electron-phonon matrix elements and fit them up to second order in strain. We find, as expected, that the main effect of strain on mobility comes from the breaking of the degeneracy of the six Δ and L valleys, and the choice of transport direction. The non-linear effects on the electron-phonon coupling of the Δ valley due to shear strain are found to reduce the mobility of Si-like SiGe by 50% per % strain. We find increases in mobility between 2 and 11 times that of unstrained SiGe for certain fixed Ge compositions, which should enhance the thermoelectric figure of merit in the same order, and could be important for piezoresistive applications.
Resumo:
The anelastic relaxation (elastic energy loss and Young modulus) of nearly stoichiometric La2CuO4+delta with LTO structure was measured. Extraordinarily intense effects are present below room temperature in the elastic dynamic susceptibility, indicating relaxational dynamics of a relevant fraction of the lattice. The involved degrees of freedom are identified as rotations of the CuO6 octahedra. Two distinct processes are found at frequencies around 1 kKz: one is observed around 150 K and is characterized by a mean activation energy of 2800 K; the second one occurs below 30 K and is governed by atomic tunnelling. Two explanations are proposed for the faster process: i) formation of fluctuating LTT domains on a scale of few atomic cells; ii) the LTO phase is a dynamical Jahn-Teller phase with all the octahedra tunneling between two LTT-like tilts. In both cases there would be important implications regarding the mechanisms giving rise to charge nanophase separation and strong electron-phonon coupling.
Resumo:
We studied the electronically excited state of the isolated reaction center of photosystem II with high-resolution fluorescence spectroscopy at 5 K and compared the obtained spectral features with those obtained earlier for the primary electron donor. The results show that there is a striking resemblance between the emitting and charge-separating states in the photosystem II reaction center, such as a very similar shape of the phonon wing with characteristic features at 19 and 80 cm−1, almost identical frequencies of a number of vibrational modes, a very similar double-Gaussian shape of the inhomogeneous distribution function, and relatively strong electron-phonon coupling for both states. We suggest that the emission at 5 K originates either from an exciton state delocalized over the inactive branch of the photosystem or from a fraction of the primary electron donor that is long-lived at 5 K. The latter possibility can be explained by a distribution of the free energy difference of the primary charge separation reaction around zero. Both possibilities are in line with the idea that the state that drives primary charge separation in the reaction center of photosystem II is a collective state, with contributions from all chlorophyll molecules in the central part of the complex.
Resumo:
No presente estudo, amostras policristalinas ricas em Ta e com estequiometrias Ta1-xZrx; x < 0.15; foram preparadas através da mistura apropriada dos elementos metálicos, os quais foram fundidos em forno a arco elétrico sobre uma placa de cobre refrigerada a água e sob atmosfera de argônio de alta pureza. Os padrões de difração de raios-X das ligas, como fundidas (as cast) e tratadas termicamente a 850 °C por 24 h, revelaram a ocorrência de uma estrutura cristalina cúbica de corpo centrada bcc, tipo W, e parâmetros de rede que aumentam suavemente com o aumento do teor de Zr nas ligas. Medidas de susceptibilidade magnética dc, conduzidas nas condições de resfriamento da amostra em campo zero (ZFC) e do resfriamento com o campo magnético aplicado (FC), indicaram que supercondutividade volumétrica é observada abaixo de ~ 5.8, 6.9, 7.0 K em amostras com x = 0.05, 0.08, e 0.10, respectivamente. Essas temperaturas críticas supercondutoras são bastante superiores àquela observada no Ta elementar ~ 4.45 K. Medidas de resistividade elétrica na presença de campos magnéticos aplicados de até 9 T confirmaram a temperatura crítica supercondutora das amostras estudadas. O campo crítico superior Hc2 e o comprimento de coerência E foram estimados a partir dos dados de magnetorresistência. Os valores estimados de Hc2 foram de ~ 0.46, 1.78, 3.85 e 3.97 T, resultando em valores de E ~ 26.0, 13.6, 9.2 e 9.1 nm para as ligas as cast com x = 0.00, 0.05, 0.08 e 0.10, respectivamente. A partir dos dados experimentais do calor específico Cp das ligas, magnitudes estimadas do salto em Cp nas vizinhanças das transições supercondutoras indicaram valores maiores que o previsto pela teoria BCS. Utilizando as equações analíticas derivadas da teoria do acoplamento forte da supercondutividade foi então proposto que o aumento da temperatura de transição supercondutora nas ligas devido a substituição parcial do Ta por Zr está intimamente relacionado ao aumento do acoplamento elétron-fônon, visto que a densidade de estados eletrônicos no nível de Fermi foi estimada ser essencialmente constante através da série Ta1-xZrx com x < 0.10.
Resumo:
We construct and analyze a microscopic model for insulating rocksalt ordered double perovskites, with the chemical formula A(2)BB'O(6), where the B' atom has a 4d(1) or 5d(1) electronic configuration and forms a face-centered-cubic lattice. The combination of the triply degenerate t(2g) orbital and strong spin-orbit coupling forms local quadruplets with an effective spin moment j=3/2. Moreover, due to strongly orbital-dependent exchange, the effective spins have substantial biquadratic and bicubic interactions (fourth and sixth order in the spins, respectively). This leads, at the mean-field level, to three main phases: an unusual antiferromagnet with dominant octupolar order, a ferromagnetic phase with magnetization along the [110] direction, and a nonmagnetic but quadrupolar ordered phase, which is stabilized by thermal fluctuations and intermediate temperatures. All these phases have a two-sublattice structure described by the ordering wave vector Q=2 pi(001). We consider quantum fluctuations and argue that in the regime of dominant antiferromagnetic exchange, a nonmagnetic valence-bond solid or quantum-spin-liquid state may be favored instead. Candidate quantum-spin-liquid states and their basic properties are described. We also address the effect of single-site anisotropy driven by lattice distortions. Existing and possible future experiments are discussed in light of these results.
Resumo:
Intervalley interference between degenerate conduction band minima has been shown to lead to oscillations in the exchange energy between neighboring phosphorus donor electron states in silicon [B. Koiller, X. Hu, and S. Das Sarma, Phys. Rev. Lett. 88, 027903 (2002); Phys. Rev. B 66, 115201 (2002)]. These same effects lead to an extreme sensitivity of the exchange energy on the relative orientation of the donor atoms, an issue of crucial importance in the construction of silicon-based spin quantum computers. In this article we calculate the donor electron exchange coupling as a function of donor position incorporating the full Bloch structure of the Kohn-Luttinger electron wave functions. It is found that due to the rapidly oscillating nature of the terms they produce, the periodic part of the Bloch functions can be safely ignored in the Heitler-London integrals as was done by Koiller, Hu, and Das Sarma, significantly reducing the complexity of calculations. We address issues of fabrication and calculate the expected exchange coupling between neighboring donors that have been implanted into the silicon substrate using an 15 keV ion beam in the so-called top down fabrication scheme for a Kane solid-state quantum computer. In addition, we calculate the exchange coupling as a function of the voltage bias on control gates used to manipulate the electron wave functions and implement quantum logic operations in the Kane proposal, and find that these gate biases can be used to both increase and decrease the magnitude of the exchange coupling between neighboring donor electrons. The zero-bias results reconfirm those previously obtained by Koiller, Hu, and Das Sarma.
Resumo:
In this report, we studied the thickness effect on the optical and morphological properties of self-assembled (SA) poly(p-phenylenevinylene) (PPV) films, wich were processed with 5 and 75 layers from a PPV precursor polymer and dodecylbenzenesulfonate, and then, thermally converted at 230 °C. The increase of the film thickness yielded more intense peaks in the vibrational spectral range. The electron-phonon coupling was quantified by the Huang - Rhys factor, that shows the effects on the polymer chain mobility in the interface substrate/polymer. A strong emission anisotropy r=0.57 was observed for the film with 5 layers of thickness decreasing to 0.34 for the film with 75 layers. Finally, the surface topology of the films was measured using Atomic Force Microscopy.
Resumo:
La présente thèse porte sur les limites de la théorie de la fonctionnelle de la densité et les moyens de surmonter celles-ci. Ces limites sont explorées dans le contexte d'une implémentation traditionnelle utilisant une base d'ondes planes. Dans un premier temps, les limites dans la taille des systèmes pouvant être simulés sont observées. Des méthodes de pointe pour surmonter ces dernières sont ensuite utilisées pour simuler des systèmes de taille nanométrique. En particulier, le greffage de molécules de bromophényle sur les nanotubes de carbone est étudié avec ces méthodes, étant donné l'impact substantiel que pourrait avoir une meilleure compréhension de ce procédé sur l'industrie de l'électronique. Dans un deuxième temps, les limites de précision de la théorie de la fonctionnelle de la densité sont explorées. Tout d'abord, une étude quantitative de l'incertitude de cette méthode pour le couplage électron-phonon est effectuée et révèle que celle-ci est substantiellement plus élevée que celle présumée dans la littérature. L'incertitude sur le couplage électron-phonon est ensuite explorée dans le cadre de la méthode G0W0 et cette dernière se révèle être une alternative substantiellement plus précise. Cette méthode présentant toutefois de sévères limitations dans la taille des systèmes traitables, différents moyens théoriques pour surmonter ces dernières sont développés et présentés dans cette thèse. La performance et la précision accrues de l'implémentation résultante laissent présager de nouvelles possibilités dans l'étude et la conception de certaines catégories de matériaux, dont les supraconducteurs, les polymères utiles en photovoltaïque organique, les semi-conducteurs, etc.
Resumo:
Electron-phonon interaction is considered within the framework of the fluctuating valence of Cu atoms. Anderson's lattice Hamiltonian is suitably modified to take this into account. Using Green's function technique tbe possible quasiparticle excitations' are determined. The quantity 2delta k(O)/ kB Tc is calculated for Tc= 40 K. The calculated values are in good agreement with the experimental results.
Resumo:
Two quantum-kinetic models of ultrafast electron transport in quantum wires are derived from the generalized electron-phonon Wigner equation. The various assumptions and approximations allowing one to find closed equations for the reduced electron Wigner function are discussed with an emphasis on their physical relevance. The models correspond to the Levinson and Barker-Ferry equations, now generalized to account for a space-dependent evolution. They are applied to study the quantum effects in the dynamics of an initial packet of highly nonequilibrium carriers, locally generated in the wire. The properties of the two model equations are compared and analyzed.
Resumo:
Photoluminescence measurements at different temperatures have been performed to investigate the effects of confinement on the electron-phonon interaction in GaAs/AlGaAs quantum wells (QWs). A series of samples with different well widths in the range from 150 up to 750 A was analyzed. Using a fitting procedure based on the Passler-p model to describe the temperature dependence of the exciton recombination energy, we determined a fit parameter which is related to the strength of the electron-phonon interaction. On the basis of the behavior of this fit parameter as a function of the well width thickness of the samples investigated, we verified that effects of confinement on the exciton recombination energy are still present in QWs with well widths as large as 450 angstrom. Our findings also show that the electron-phonon interaction is three times stronger in GaAs bulk material than in Al(0.18)Ga(0.82)As/GaAs QWs.
Resumo:
Die spektroskopische Untersuchung einzelner konjugierter Polymermoleküle, welche multichromophore Systeme darstellen, bei 1,2K eröffnete den Zugang zu den unterschiedlichen Chromophoren. In Fluoreszenzemissions- wie -anregungsspektren des Poly(2-methoxy-5-(2’-ethylhexyloxy)-rnp-phenylenvinylen) (MEH-PPV) konnten Nullphononenlinien (rein elektronische (0-0)-Übergänge) emittierender Chromophore beobachtet werden, deren Breiten durch das experimentelle Auflösungsvermögen limitiert waren. Dadurch konnte eine obere Grenze für die homogene Linienbreite festgelegt werden. Infolge starker linearer Elektron-Phonon-Kopplung und spektraler Diffusion war die Beobachtung von Nullphononenlinien jedoch auf eine Minderheit der Chromophorernbeschränkt. In geeigneten Probesystemen konnten in Anregungsspektren auch Nullphononenlinien solcher Chromophore identifiziert werden, die als Donoren im intramolekularen Energietransfer fungieren. Aufgrund der dadurch verkürzten Fluoreszenzlebensdauer und der damit verbundenen Linienverbreiterung erlaubte ihre Untersuchung die Ermittlung von Energietransferraten. Eine bei Proben höherer Molmasse auftretenden niederenergetische Subpopulation an Emittern wurde auf Grundlage ihres Fluoreszenzemissions-, -anregungs- und -abklingverhaltens und unter Berücksichtigung theoretischer Arbeiten auf längere chromophore Einheiten zurückgeführt, die sich infolge von Packungseffekten in geordneten Regionen der Polymerkette ausbilden. Die schwächere lineare Elektron-Phonon-Kopplung des leiterartig verknüpften Polypentaphenylen (LPPentP) äußerte sich in einer erhöhten Wahrscheinlichkeit des Auftretens von Nullphononenlinien. Die genaue Bestimmung von Energietransferraten litt allerdings unter einem weiteren signifikanten Beitrag zur Linienbreite neben der Lebensdauer des angeregten Zustandes (möglicherweisernspektrale Diffusion oder schnelle Dephasierungsprozesse).